TriQuint Semiconductor Inc TGA1135B Datasheet

Advance Product Information

Feb 4, 2000

18-27.5 GHz 1W Power Amplifier TGA1135B

Key Features

• 0.25 um pHEMT Technology

• 14 dB Nominal Gain at 23GHz

• 30 dBm Nominal P1dB

• 38dBm OTOI typical

• Typical 15dB Input/Output RL

• Bias 6 - 7V @ 540 mA

• On-chip power detector diode

Chip Dimensions 2.641 mm x 1.480 mm

TGA1135B Fixtured Amplifier Typical Small Signal Data

18

16

14

12

10

8

6

S21 (dB)

4

2

0

-2

-4

-6

13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32

32

31.5

31

30.5

30

29.5

P1dB (dBm)

29

28.5

28

27.5

27

16 17 18 19 20 21 22 23 24 25 26 27 28 29

Wafer 993150303, 6V/540mA

Frequency (GHz)

TGA1135B Nominal Ou tput Power

Wafer 993150303, Idq=540mA

Frequency (GHz)

VD = 7V

Note: 1 dB of
compress ion not
reached on some parts
at 27, 27.5 GHz

Primary Applications

• Point-to-Point Radio

• Point-to-Multipoint Communications

• Ka Band Sat-Com

VD = 6V

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

1

Advance Product Information

,

Feb 4, 2000

S21

S11

Measured small signal data

6V, 540mA

18

16

14

12

10

8

6

S21 (dB)

4

2

0

-2

-4

-6

13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32

-5

-7

-9

-11

-13

-15

S11 (dB)

-17

-19

-21

-23

-25

15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32

Frequency (GH z)

Frequency (GHz)

TGA1135B

-5

-7

-9

-11

-13

S22

-15

S22 (dB)

-17

-19

-21

-23

-25

15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32

Frequency (GHz)

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

2

32

31.5

31

30.5

Advance Product Information

Feb 4, 2000

TGA1135B

TGA1135B Nominal Output Power

Wafer 993150303, Idq=540mA

VD = 7V

30

29.5

P1dB (dBm)

29

28.5

28

27.5

27

16 17 18 19 20 21 22 23 24 25 26 27 28 29

Frequency (GHz)

Note: 1 dB of
compression not
reached on some parts
at 27, 27.5 GHz

P1dB Measured Data

TOI performance @ Pin SCL=7dBm: Vd=6V, Id=540mA, separation = 10MHz

43

42

41

TGA1135B wafer 993150303 nominal performance

VD = 6V

40

39

38

TOI (dBm)

37

36

35

34

33

17 18 19 20 21 22 23 24 25 26 27 28

Frequency (GHz)

Output TOI Measured Data

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

3