TriQuint Semiconductor Inc TGA1088-EPU Datasheet

Advance Product Information

23 - 29 GHz High Power Amplifier TGA1088-EPU

Key Features and Performance

• 0.25um pHEMT Technology

• 23 GHz - 29 GHz Frequency Range

• Nominal 1 Watt (28GHz ) @ P1dB

• Nominal Gain of 23 dB

• OTOI 38 dBm typical (Linear Mode)

• Bias 7V @ 400 mA Idq (Sat Power mode)

• Bias 7V @ 650 mA Idq (Linear mode)

• Chip Dimensions 4.115mm x 3.047mm

Primary Applications

The TriQuint TGA188-EPU is a three stage
HPA MMIC design using TriQuint’s proven

0.25 um Power pHEMT process to support a variety
of millimeter wave applications including
point-to-point digital radio, LMDS/LMCS and
Ka-band satellite spacecraft and ground terminals.

The three stage design consists of a 400 um input
device driving a pair of 600 um interstage devices
followed by four 600 um output devices. The device
is identical to TriQuint’s TGA9070 with the exception
of additional bias circuitry that allows the flexibility to
operate in two different modes. The high saturated
power mode will give identical performance to the
TGA9070. The high linearity mode will provide 2-3dB
improvement in OTOI performance over the TGA9070.

The TGA1088 provides greater than 1W of
output power across 23-29 GHz with a typical
PAE of 35%. Typical small signal gain is 23 dB.
The device may be biased for either high saturated
power or high linearity via bond wire jumpers.

The TGA188 requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance compliance.
The device is available in chip form.

•LMDS

• Point-to-Point Radio

TGA 1088 Typical Small Signal Gain

28
26
24
22
20
18
16
14
12

Gain (dB)

10

8
6
4
2
0

23 24 25 26 27 28 29 30 31

TGA 1088 Typical Saturated Output Power

34
32
30
28
26
24
22
20
18

Pout @ Pin = 12dBm (dBm)

16
14
12
10

23 24 25 26 27 28 29 30 31

Biased in High Saturated Power Mode

Freque ncy (GHz)

Frequency (GHz)

Note: Devices designated as EPU are typ i cally early in their char acteriz ation process prior to finalizing all electrical and process
specifications. Specifications are subje ct to change without notice.

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

1

1

Rf in

Advance Product Information

Vg

.01uF 100pF

Jumper

.01uF 100pF

TGA1088 Bias Connection for High linearity M ode

Rf out

Vd

Note: Devices designated as EPU are typ i cally early in their char acteriz ation process prior to finalizing all electrical and process
specifications. Specifications are subje ct to change without notice.

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

2