TriQuint Semiconductor Inc TGA1082B Datasheet

Advance Product Information

27- 32 GHz 1.5 Watt Power Amplifier TGA1082B

Prototype Part #, Production Part # TBD

Key Features

• 0.25 um pHEMT Technology

• 22 dB Nominal Gain at 30GHz

• 1W Nominal Pout @ P1dB

• 1.5W Psat at 30GHz

• Bias 6 - 7V @ 960 mA

• Chip Dimensions 4.13mm x 3.3mm

Primary Applications

• Point-to-Point Radio

• Point-to-Multipoint Communications

The TriQuint TGA1082B-EPU is a three stage
HPA MMIC design using TriQuint’s proven

0.25 um Power pHEMT process. The TGA1082B
is designed to support a variety of millimeter wave
applications including point-to-point digital radio
and LMDS/LMCS and Ka band satellite ground
terminals.

The TGA1082B provides 30 dBm nominal
output power at 1dB compression across
27-32GHz. Typical small signal gain is 22 dB
at 30GHz.

The TGA1082B requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance
compliance. The device is available in chip form.

• Ka Band Sat-Com

30
28
26
24
22

Gain (dB)

20
18
16

28 29 30 31 32

Frequency (GHz)

32
30
28
26
24
22

P1dB (dBm)

20
18

28 29 30 31 32

Frequency (GHz)

Note: Devices designat e d as EPU are typically earl y in their char a cterization process prior to finalizing all electric al and process
specifications. Sp ecifications are subje ct to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

1

Advance Product Information

Note: Devices designat e d as EPU are typically earl y in their char a cterization process prior to finalizing all electric al and process
specifications. Sp ecifications are subje ct to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

2