TriQuint Semiconductor Inc TGA1073G-SCC Datasheet

Product Datasheet

August 15, 2000

19 - 27 GHz Medium Power Amplifier TGA1073G-SCC

Key Features and Performance

• 0.25 um pHEMT Technology

• 22 dB Nominal Gain

• 25 dBm Nominal Pout @ P1dB

• Bias 5-7V @ 220 mA

• Chip Dimensions 2.55 mm x 1.15mm

Primary Applications

The TriQuint TGA1073G-SCC is a three stage
MPA MMIC design using TriQuint’s proven

0.25 um Power pHEMT process. The TGA1073G
is designed to support a variety of millimeter wave
applications including point-to-point digital radio
and point-to-multipoint communications.

The three stage design consists of a 200 um input
device driving a 480um interstage device
followed by an 800um output device.

The TGA1073G provides 25dBm nominal
output power at 1dB compression across
19-27GHz. Typical small signal gain is 22 dB.

The TGA91073G requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance compliance.
The device is available in chip form.

• Point-to-Point Radio

• Point-to-Multipoint Communications

25

20

15

10

5

0

-5

-10

-15

-20

Gain and Return Loss (dB)

-25

-30

18 19 20 21 22 23 24 25 26 27 28

S21

S11

S22

Frequency (GHz)

28

24

20

16

12

P1dB (dBm)

8

4

0

19 20 21 22 23 24 25 26 27 28 29

Frequency (GHz)

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

1

rev 11/10/98

Product Datasheet

MAXIMUM RATINGS

August 15, 2000

SYMBOL PARAMETER 5/

+

V

+

I

P

IN

P

D

T

CH

T

M

POSITIVE SUPPLY VOLTAGE 8 V

POSSITIVE SUPPLY CURRENT 296 mA 1/

INPUT CONTINUOUS WAVE POWER 23 dBm 4/

POWER DISSIPATION 2.37 W

OPERATING CHANNEL TEMPERATURE 150 0C2/ 3/

MOUNTING TEMPERATURE

VALUE NOTES

320 0C

(30 SECONDS)

T

STG

STORAGE TEMPERATURE -65 to 150 0C

1/ Total current for all stages.

2/ These ratings apply to each individual FET.

3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum

life, it is recommended that junction temperatures be maintained at the lowest possible levels.

4/ This value reflects an estimate. Actual value will be inserted as soon as it is determined.

5/ These ratings represent the maximum operable values for the device.

DC SPECIFICATIONS (100%)

= 25 °C + 5 °C)

(T

A

NOTES SYMBOL TEST CONDITIONS 2/ LIMITS UNITS

MIN

I

DSS3

G

M3

STD 80

STD 176

1/ |VP1|STD 0.5

1/ |VP2|STD 0.5

1/ |VP3|STD 0.5

1/ |V

1/ |V

1/ VP, V

BVGD

, and V

|STD 1130V

BVGD1

|STD 1130V

BVGS1

are negative.

BVGS

MAX

376

424

1.5

1.5

1.5

2/ The measurement conditions are subject to change at the manufacture’s discretion (with appropriate

notification to the buyer).

mA

mS

V

V

V

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

2

rev 11/10/98