TriQuint Semiconductor Inc TGA1073C-SCC Datasheet

Product Datasheet

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A225240260

August 15, 2000

36 - 40 GHz Power Amplifier TGA1073C-SCC

Key Features and Performance

• 0.25um pHEMT Technology

• 36-40 GHz Frequency Range

• 26 dBm Nominal Pout @ P1dB, 38GHz

• 15 dB Nominal Gain

• Bias 5-7V @ 240 mA

• Chip Dimensions 2.4 mm x 1.45 mm

Primary Applications

• Point-to-Point Radio

The TriQuint TGA1073C-SCC is a two stage PA MMIC
design using TriQuint’s proven 0.25 µm Power pHEMT
process to support a variety of millimeter wave
applications including point-to-point digital radio and
point-to-multipoint systems.

The two-stage design consists of two 400 µm input
devices driving four 400 µm output devices.

The TGA1073C provides 24 dBm of output power at
1dB gain compression and 26 dBm saturated output
power across the 36-40 GHz with a typical small signal
gain of 15 dB.

The TGA1073C requires a minimum of off-chip
components. Each device is 100% DC and RF tested
on-wafer to ensure performance compliance. The
device is available in chip form.

Typical Performance, 36-40 GHz

Paramet e

Small Signal Gain dB 1

Gain Flatness dB

Output P1d

Saturated Output Power dBm 2

Saturated PA

Output OTOI dBm 3

IMR3 @ SCL = P1dB - 10dB dBc 3

ut Ret urn Loss dB -10

Output Ret urn Loss dB -8

Reverse Isolati on dB -35

Quiescent Current m

Unit +5V Supply+6V Supply+7V Suppl

1

dBm 2

22 2

• Point-to-Multipoint Radio

TGA1073C Typical RF Performance (Fixtured)

20

15

10

5

0

-5

-10

-15

Gain and Return Loss (dB)

-20

-25

33 34 35 36 37 38 39 40 41 42 43

33

30

27

24

21

18

15

12

9

6

Output Power @ P1dB (dBm)

3

36 37 38 39 40 41 42

S22

S11

Frequency (GHz)

TGA1073C Typical RF Performance (Fixtured)

P1dB

VD = +5V, +6V, +7V

IMR3 @ VD = +6V

Frequency (GHz)

S21

50

48

46

44

42

40

38

36

34

32

IMR3 @ SCL=P1dB-10dB (dBc)

30

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

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MAXIMUM RATINGS

Product Datasheet

TGA1073C-SCC

SYMBOL PARAMETER 5/

+

V

+

I

P

IN

P

D

T

CH

T

M

POSITIVE SUPPLY VOLTAGE 8 V

POSITIVE SUPPLY CURRENT 480 mA 1/

INPUT CONTINUOUS WAVE POWER 23 dBm 4/

POWER DISSIPATION 3.84 W

OPERATING CHANNEL TEMPERATURE 150 0C2/ 3/

MOUNTING TEMPERATURE

VALUE NOTES

320 0C

(30 SECONDS)

T

STG

STORAGE TEMPERATURE -65 to 150 0C

1/ Total current for all stages.

2/ These ratings apply to each individual FET.

3/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum

life, it is recommended that junction temperatures be maintained at the lowest possible levels.

4/ This value reflects an estimate. Actual value will be inserted as soon as it is determined.

5/ These ratings represent the maximum operable values for this device.

DC SPECIFICATIONS (100%)

= 25 °C + 5 °C)

(T

A

NOTES SYMBOL TEST CONDITIONS 2/ LIMITS UNITS

MAX

188

212

1.5

1.5

1.5

mA

mS

V

V

V

1/ |VP1|STD 0.5

1/ |VP2|STD 0.5

1/ |V

1/ |V

1/ |V

1/ VP, V

BVGD

I

G

BVGD1,2

BVGS1

, and V

MIN

DSS1

M1

|STD 0.5

P3-6

STD 40

STD 88

|STD 1130V

|STD 1130V

are negative.

BVGS

2/ The measurement conditions are subject to change at the manufacture’s discretion (with appropriate notification to

the buyer).

TriQuint Semiconductor Texas : [phone] Fax [phone] Web: www.triquint.com

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