TriQuint Semiconductor Inc TGA1071-EPU Datasheet

36 - 40 GHz Power Amplifier TGA1071-EPU

The TriQuint TGA1071-EPU is a two stage
PA MMIC design using TriQuint’s proven

0.25 um Power pHEMT process to support a variety
of millimeter wave applications including
point-to-point digital radio and point-to-multipoint
systems.

The two-stage design consists of two 300 um input
devices driving a pair of 400 um output devices.

The TGA1071 provides 22dBm of output power
across 36-40 GHz with a typical small signal gain
of 15dB.

The TGA1071 requires minimum off-chip
components. Each device is 100% DC and RF
tested on-wafer to ensure performance compliance.
The device is available in chip form.

Advance Product Information

Key Features and Performance

• 0.25um pHEMT Technology

• 36-40 GHz Frequency Range

• 22 dBm Nominal Pout @ P1dB

• 15 dB Nominal Gain

• 5V, 120 mA Bias

• Chip Dimensions 3.4mm x 2.1mm

Primary Applications

• Point-to-Point Radio

• Point-Multipoint Radio

TGA1071 Typical RF Performance (Fixtured)

20

15

10

5

0

-5

-10

Gain and Return Loss (dB)

-15

-20

-25

32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0

25.00

s11

s22

Frequency (GHz)

Small Signal Gain

TGA1071 RF Probe Summary Data

20.00

15.00

10.00

Pout (dBm)

5.00

0.00
36 37 38 39 40

Frequency (GHz)

Pout at 1dB Gain Compression

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

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1

Advance Product Information

+

D

IN

CH

M

STG

P1-5

GS1

GD1-5

p

Note: RF probe data is taken at 0.4 GHz steps

Electrical Characteristics

RECOMMENDED MAXIMUM RATINGS

Symbol Parameter Value Notes

+

V
I
P
P
T

T
T

1/ These ratings apply to each individual FET

2/ Junction operating temperature will directly affect the device mean time to failure

(MTTF). For maximum life it is recommended that junction temperatures be
maintained at the lowest possible levels.

3/ Total current for both stages

Positive Supply Voltage 7 V
Positive Supply Current .4 A 3/
Power Dissipation 2.8 W
Input Continuous Wave Power 20 dBm
Operating Channel Temperature

Mounting Temperature (30 seconds)
Storage Temperature

150 °C
320 °C

-65 °C to 150 °C

1/, 2/

DC PROBE TESTS

(TA = 25 °C ± 5°C)

Symbol Parameter Minimum Maximum Value

Idss Saturated Drain Current (info

140 658 mA

only)
V
BV
BV

Pinch-off Voltage -1.5 -0.5 V

Breakdown Voltage gate-source -30 -8 V

Breakdown Voltage gate-drain -30 -8 V

ON-WAFER RF PROBE CHARACTERISTICS

(TA = 25 °C ± 5°C)

Symbol Parameter Test Condition

Limit

Units

Vd=5V, Id=120mA

Min Nom Max

G

Small-signal
Power Gain

F = 36 to 40 GHz
F = 38 GHz 13

15 dB

dB
dB

IRL Input Return

F = 36 to 40 GHz - -10 - dB

Loss

ORL Output Return

F = 36 to 40 GHz - -10 - dB

Loss

PWR Output Power F = 36 to 40 GHz 22 - dBm

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

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