TriQuint Semiconductor Inc TGA1055-EPU Datasheet

Advance Product Information

Bias Testing: Vd=7V, Id=1.38A, T=25C, Freq=29GHz

Ka Band 2 Watt Power Amplifier TGA1055-EPU

Key Features and Performance

• 0.25 um pHEMT Technology

• 20 dB Nominal Gain

• 2W Nominal Pout

• -30 dBc IMR3 @ 26 dBm SCL

• Bias 7V @ 1.4 A

• Chip Dimensions 5.89 mm x 3.66 mm

EG1055B

35

33

31

29

27

25

23

21

19

Output Power (dBm) & Gain (dB)

17

15

5 6 7 8 9 10 11 12 13 14 15

Input Power (dBm)

Preliminary Pout, Gain and PAE Data at 29GHz

20

18

16

14

12

10

8

6

4

2

0

Primary Applications

• LMDS

• Point-to-Point Radio

• Satellite Ground Terminal

Release Status

• Currently shipping Engineering
Prototype Units

Pout
Gain
PAE

Power Added Efficiency (%)

Chip Dimensions 5.89 mm x 3.66 mm

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

1

1

Advance Product Information

TriQuint Semiconductor Texas : Phone [phone] Fax [phone] Web: www.triquint.com

2