TriQuint AP561-F Schematics
c
r
r
Applications
Small Cells / Repeaters / DAS
3G / 4G Wireless Infrastructure
Wireless Backhaul
Portable Radios
LTE / WCDMA / CDMA
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
14 Pin 5x6 mm DFN Package
Product Features
700-2900 MHz
+39 dBm P1dB
+12 V Supply Voltage
-50 dBc ACLR @ 28dBm Pout
1.5% EVM @ 30 dBm Pout
13 dB Gain @ 2.6GHz
Fast Shut-Down Capability
Internal Active Bias and Temp Compensation
Lead-free / RoHS-compliant
General Description
The AP561 is a high dynamic range broadband powe
amplifier in a surface mount package. The single-stage
amplifier has 13 dB Gain, while being able to achieve
high performance for 0.7–2.9 GHz applications with up
to +39 dBm of compressed 1dB power.
The AP561 uses a high reliability +12V InGaP/GaAs
HBT process technology. The device incorporates
proprietary bias circuitry to compensate for variations in
linearity and current draw over temperature. The device
does not require any negative bias voltage; an internal
active bias allows the AP561 to operate directly off a
commonly used +12V supply and has the added feature
of a +5V power down control pin. RoHS-compliant
5x6mm DFN package is surface mountable to allow fo
low manufacturing costs to the end user.
Functional Block Diagram
Pin 1 Reference Mark
1
PIN_Vbias
ACTIVE
BIAS
Backside Paddle - RF/DC GND
RFi n
RFi n
RFi n
2
NC
NC
3
4
5
6
NC
7
Pin Configuration
Pin No. Label
1 PIN_V
2, 3, 7, 8, 12, 13 N/C
4, 5, 6 RF IN
9, 10, 11 RF Output / VCC
14 PIN_VPD
Backside paddle RF / DC GND
BIAS
Ordering Information
14
13
12
11
10
9
8
PI N _ Vpd
NC
NC
RFout/ Vc
Rfout/ Vcc
Rfout/ Vcc
NC
Datasheet: Rev B 09-17-13
© 2013 TriQuint
Part No. Description
AP561-F 0.7-2.9 GHz 12V 8W Power Amplifier
AP561-PCB900 869-894 MHz Evaluation Board
AP561-PCB2140 2110-2170 MHz Evaluation Board
AP561-PCB2500 2.5-2.7 GHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
- 1 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
Absolute Maximum Ratings
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Recommended Operating Conditions
Parameter Rating
Storage Temperature −55 to 150°C
RF Input Power, CW, 50Ω, T=25°C +33 dBm
Supply Voltage (VCC) +15 V
BV
cbo
Power Dissipation 14 W
Operation of this device outside the parameter ranges
given above may cause permanent damage.
+35 V
Parameter Min Typ Max Units
Supply Voltage (VCC) 12.0 V
T
−40 +85 °C
CASE
Tj for >106 hours MTTF 158 °C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, Temp= +25°C, using AP561-PCB2600 application circuit
Parameter Conditions Min Typ Max Units
Operational Frequency Range
Test Frequency
Output Channel Power
Gain
Input Return Loss
Output Return Loss
Error Vector Magnitude
Collector Efficiency
RF Switching Speed
Output P1dB
Operating Current, ICC
Quiescent Current, ICQ
Reference Current, I
REF
Thermal Resistance, θjc
Notes:
1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels signal, 9.5 dB PAR @ 0.01%.
2. Switching speed: 50% TTL to 100/0% RF. Vpd used for device power down (low=RF off).
See note 1.
See note 2.
700 2900 MHz
2600
+30
13.0
14.5
6.5
1.7
16.2
50
+39
510
300
10
MHz
dBm
dB
dB
dB
%
%
ns
dBm
mA
mA
mA
Module (junction to case) 6.0 °C/W
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 2 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
Device Characterization
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, I
S(1,1)
40
Gain / Maximum Stable Gain
20
0
Gain (dB)
-20
DB(GMax())
AP561
-40
0246
DB(|S(2,1)|)
AP561
Frequency (GHz)
AP561
4
.
0
2
.
0
0
0.2
2
.
0
-
4
.
0
-
Notes:
= 300 mA (typ.), Temp= +25°C, calibrated to device pins
CQ
S11
8
1.0-1.0
.
0
6
.
0
1.0
0.4
0.6
0.8
6
.
0
-
8
.
0
-
Swp Max
6GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
2.0
3.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.05GHz
4
.
0
2
.
0
0
0.2
2
.
0
-
4
.
0
-
S22
8
.
0
6
.
0
0.4
0.6
0.8
6
.
0
-
8
.
0
-
S(2,2)
1.0-1.0
AP561
1.0
2.0
Swp Max
6GHz
0
.
2
0
.
3
0
.
4
0
.
5
0
.
0
1
10.0
5.0
3.0
4.0
0
.
0
1
-
0
.
5
-
0
.
4
-
0
.
3
-
0
.
2
-
Swp Min
0.05GHz
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in red.
S-Parameters
Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, Temp= +25°C, 50 Ohm system
Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 -0.83 -174.19 27.09 122.75 -43.35 29.12 -1.38 -106.01
100 -0.43 -177.42 22.26 106.35 -43.10 8.71 -1.82 -138.64
300 -0.35 179.26 14.06 89.18 -41.21 1.08 -2.02 -164.78
500 -0.32 177.35 9.81 79.93 -40.63 0.69 -2.10 -172.01
700 -0.34 175.28 7.08 71.64 -40.35 3.54 -2.09 -176.13
900 -0.40 173.11 5.19 63.88 -40.26 -3.79 -1.99 -177.89
1100 -0.47 170.97 3.82 55.72 -40.09 -9.55 -1.86 -178.93
1300 -0.53 168.26 2.80 47.12 -39.83 -16.44 -1.78 -179.77
1500 -0.59 165.56 2.18 37.92 -39.58 -23.59 -1.68 179.34
1700 -0.87 161.87 2.75 25.71 -38.56 -35.47 -1.67 177.40
1900 -1.14 158.99 2.84 12.58 -37.79 -49.59 -1.45 176.17
2100 -1.58 157.33 3.04 -4.10 -37.20 -69.96 -1.07 174.50
2300 -2.07 158.08 3.08 -26.45 -36.71 -98.60 -0.57 171.36
2500 -2.11 161.67 2.27 -53.16 -36.83 -134.34 -0.20 166.20
2700 -1.52 163.86 0.21 -79.14 -37.65 -170.26 -0.18 160.52
2900 -0.93 162.94 -2.57 -100.12 -38.71 157.51 -0.38 155.92
3100 -0.60 161.26 -5.57 -115.90 -39.66 133.27 -0.55 152.79
3300 -0.44 159.75 -8.55 -127.57 -40.18 115.97 -0.68 150.56
3500 -0.30 157.96 -11.15 -136.15 -40.26 102.36 -0.77 148.63
3700 -0.20 156.27 -13.44 -143.55 -40.26 94.11 -0.84 147.06
3900 -0.16 154.67 -15.57 -150.57 -39.83 85.11 -0.87 145.70
4100 -0.14 152.82 -17.53 -157.27 -39.91 78.44 -0.87 144.40
4300 -0.15 150.80 -19.35 -163.61 -39.49 72.37 -0.86 143.38
4500 -0.13 148.32 -21.11 -170.25 -39.09 66.71 -0.89 142.13
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 3 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
0.7-2.9 GHz 8W HBT Power Amplifier
AP561-PCB900 Evaluation Board (896−894 MHz)
Notes:
1. See Evaluation Board PCB Information section for material and stack-up.
2. All components are of 0603 size unless stated on the schematic.
3. The right edge of C20 is placed at 153 mil from the AP561 RFin pin.
4. The right edge of C21 is placed at 55 mil from the AP561 RFin pin.
5. The right edge of C24 is placed at 230 mil from the AP561 RFin pin.
6. The left edge of C22 is placed at 78 mil from the AP561 RFout pin.
7. The left edge of L2 is placed at 135 mil from the AP561 RFout pin.
8. The left edge of C23 is placed at 265 mil from the AP561 RFout pin.
9. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur.
AP561-F
Bill of Material – AP561-PCB900
Reference Des. Value Description Manuf. Part Number
N/A N/A Printed Circuit Board – FR4
U1 N/A 0.7-2.9 GHz 8W Power Amplifier TriQuint AP561-F
C12 0.1 uF
C4, C11 1000 pF
C5, C18, C7 100 pF
C13 10 uF
R1 200 Ω
R7 330 Ω
R2 10 kΩ
R8 51 Ω
C1 22 pF
C20 10 pF
C21 1.5 Ω
C22 3.0 pF
C23, C24 6.8 pF
L2 1.5 nH
L1 18 nH
FB1 N/A
D1 N/A TVS Diode Array, 5V, SOT23, 2Ch
D2 N/A Diode TVS, 13V, 400W, 5% SMA On-Semiconductor
CAP, 0603,10%, 50V, X7R
CAP, 0603, 5%, 50V, NPO
CAP, 0603, 5%, 50V, NPO
CAP, 1206, 10%, 15V, Tantalum
RES, 0805, 5%, 1/10W. Chip.
RES, 0603,5%, 1/10W, Chip
RES, 0603, 5%,1/16W, Chip
RES, 0603, 5%, 1/16W, Chip
CAP, 0603, 5%, 50V, NPO/COG
CAP, 0603, 2%, ACCU-P, 50V
RES, 0603,5%, 1/10W, Chip
CAP, 0603, ± 0.05pF, ACCU-P, 50V
CAP, 0603, ± 0.05pF, ACCU-P, 50V
IND, 0603, ±0.3nH
IND, 0805, 5%, ceramic core
Filter EMI Ferrite Bead
various
various
various
various
various
various
various
various
various
AVX
various
AVX 06035J3R0ABSTR
AVX
Toko LL1608-FSL1N5S
Coilcraft
various
On-Semiconductor
06035J100GBSTR
0805HQ-18NXJC
SM05T1G
1SMA13AT3G
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 4 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
Typical Performance – AP561-PCB900
AP561-F
0.7-2.9 GHz 8W HBT Power Amplifier
Test conditions unless otherwise noted: V
Parameter Typical Values
= +12 V, V
CC
= +5 V, I
PD
= 300 mA (typ.), Temp=+25°C
CQ
Units
Frequency 869 880 894 MHz
Gain 15.4 15.2 15.0 dB
Input Return Loss 18 15 13 dB
Output Return Loss 9 10 11 dB
ACLR @ 29dBm Output Power
IMD3 @ 29dBm Output Power
Operating Current, ICC @ 29dBm Output Power
Collector Efficiency @ 29dBm Output Power
[2]
-52 -52 -52 dBc
[1]
-46 -46.5 -47 dBc
[2]
470 465 460 mA
[2]
14 14.5 14.7 %
Output P1dB 39.2 39.1 38.9 dBm
Notes:
1. IMD3 is measured with 1 MHz tone spacing.
2. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability.
Performance Plots – AP561-PCB900
Test conditions unless otherwise noted: V
17
16
Gain vs. Frequency
Temp : +25 C
Vpd = 5V
= +12 V, V
CC
0
-5
= +5 V, I
PD
Return Loss vs. Frequency
Temp : +25 C
Vpd = 5V
= 300 mA (typ.), Temp=+25°C
CQ
-40
S22
S11
-45
IMD3 vs. Output Power
Frequency : 880 MHz
CW Signal
Temp.=+25oC
15
Gain (dB)
14
13
0.86 0.87 0.88 0.89 0.90
ACLR vs. Output Power vs. Frequency
-45
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
-50
869 MHz 880 MHz 894 MHz
ACLR (dBc)
-55
-60
20 22 24 26 28 30
Frequency (G Hz)
Temp.=+25oC
Output Power (dBm)
-10
Return Loss (dB)
-15
-20
0.86 0.87 0.88 0. 89 0.90
20
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
15
Temp.=+25oC
10
Efficiency (%)
5
0
20 22 24 26 28 30
Frequency ( GHz)
Efficiency vs. Output Power
Frequency : 880 MHz
Output Power (dBm)
-50
IMD3 (dBc)
-55
-60
20 22 24 26 28 30
600
W-CDMA 3GPP Test Model 1+64 DPCH
PAR = 10.2dB @ 0.01% Probability
3.84 MHz BW
550
500
450
Icc (mA)
400
350
300
20 22 24 26 28 30
Output Power/Tone (dBm)
Collector Current vs. Output Power
Frequency : 880 MHz
Output Power (dBm)
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 5 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
0.7-2.9 GHz 8W HBT Power Amplifier
AP561-PCB2140 Evaluation Board (2110−2170 MHz)
FB1
AP561-F
R1
C20
Notes:
1. See Evaluation Board PCB Information section for material and stack-up.
2. All components are of 0603 size unless stated on the schematic.
3. The right edge of C20 is placed at 160 mil from the AP561 RFin pin.
4. The right edge of C21 is placed at 45 mil from the AP561 RFin pin.
5. The left edge of C22 is placed at 68 mil from the AP561 RFout pin.
6. The left edge of L2 is placed at 125 mil from the AP561 RFout pin.
7. The left edge of C23 is placed at 263 mil from the AP561 RFout pin.
8. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur.
9. The primary RF microstrip line is 50. The RF trace is cut at component C21 and L2 for this particular reference design.
R7
C18
L1
C22
C23
Bill of Material – AP561-PCB2140
Reference Des. Value Description Manuf. Part Number
N/A N/A Printed Circuit Board – FR4
U1 N/A 0.7-2.9 GHz 8W Power Amplifier TriQuint AP561-F
C12 0.1 uF CAP, 0603,10%, 50V, X7R various
C4,C11 1000 pF CAP, 0603, 5%, 50V, NPO various
C5 100 pF CAP, 0603, 5%, 50V, NPO various
C13 10 uF CAP, 1206, 10%, 15V, Tantalum various
R1 200 Ω RES, 0805,5%,1/10W. CHIP. various
R7 280 Ω RES, 0603,5%, 1/10W, Chip various
R2 10 kΩ RES, 0603, 5%,1/16W, Chip various
C1, C7, C18 22 pF CAP, 0603, 5%, 50V, NPO/COG various
C20 2.4 pF CAP, 0603, ± 0.05 pF, ACCU-P, 50V AVX 06035J2R4ABSTR
C21 6.8 pF CAP, 0603, ± 0.1 pF, ACCU-P, 50V AVX 06035J6R8ABSTR
C22 3.9 pF CAP, 0603, ± 0.05pF, ACCU-P, 50V AVX 06035J3R9ABSTR
C23 2.0 pF CAP, 0603, ± 0.05pF, ACCU-P, 50V AVX 06035J2R0ABSTR
L2 1.2 nH IND, 0603, ±0.3nH Toko LL1608-FSL1N2S
L1 18 nH
IND, 0805, 5%, ceramic core
Coilcraft
FB1 N/A Filter EMI Ferrite Bead various
D1 N/A TVS Diode Array, 5V, SOT23, 2Ch
On-Semiconductor SM05T1G
D2 N/A Diode TVS, 13V, 400W, 5% SMA On-Semiconductor
0805HQ-18NXJC
1SMA13AT3G
Datasheet: Rev B 09-17-13
© 2013 TriQuint
- 6 of 17 -
Disclaimer: Subject to change without notice
www.triquint.com
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