TOSHIBA TPD1030F Technical data
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TPD1030F
Preliminar
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
T P D 1 0 3 0 F
2-IN-1 Low-Side Switch for Motor, Solenoid and Lamp Drive
TPD1030F is a 2-IN-1 low-side switch.
The IC has a vertical MOSFET output which can be directly
driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC
offers intelligent self-protection function.
Features
• Built-in two power IC chips with a new structure combining a
control block and a vertical power MOSFET (L
each chip.
• Can directly drive a power load from a CMOS or TTL logic.
• Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and
overcurrent (current limiter).
• Low Drain-Source ON-resistance: R
• Low Leakage Current: I
• Low Input Current: I
• 8-pin SOP package with embossed-tape packing.
Pin Assignment
SOURCE1
IN1
SOURCE2
(top view)
1
2
3
= 10 µA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C)
DSS
= 300 µA (max) (@VIN = 5 V, Tch = 25°C)
IN
8
7
6
DS (ON)
DRAIN1
DRAIN1
DRAIN2
2
-π-MOS) on
= 0.6 Ω (max) (@VIN = 5 V, ID = 0.5 A, Tch = 25°C)
Weight: 0.08 g (typ.)
IN2
4 5
Note1: That because of its MOS structure, this product is sensitive to static electricity.
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TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility o
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failur
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, pleas
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
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The products described in this document are subject to the foreign exchange and foreign trade laws.
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The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed b
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION o
others.
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The information contained herein is subject to change without notice.
DRAIN2
980910EBA1
2000-03-01 1/5
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Preliminar
Block Diagram
TPD1030F
IN1
IN2
1
Overtemperature Detection
/Protection
2
3
Overtemperature Detection
/Protection
4
Overcurrent Detection
Overcurrent Detection
SOURCE1
SOURCE2
Pin Description
Pin No. Symbol Pin Description
1 SOURCE1 Source pin 1
Input pin 1
2 IN1
3 SOURCE2 Source pin 2
4 IN2
5, 6 DRAIN2
7, 8 DRAIN1
This pin is connected to a pull-down resistor internally, so that even when input wiring is
open-circuited, output can never be turned on inadvertently.
Input pin 2
This pin is connected to a pull-down resistor internally, so that even when input wiring is
open-circuited, output can never be turned on inadvertently.
Drain pin 2
Drain current is limited (by current limiter) if it exceeds 1 A (min) in order to protect the IC.
Drain pin 1
Drain current is limited (by current limiter) if it exceeds 1 A (min) in order to protect the IC.
/Protection
/Protection
8
7
6
5
DRAIN1
DRAIN1
DRAIN2
DRAIN2
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