查询TPCS8212供应商
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8212
TPCS8212
Lithium Ion Battery Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: R
DS (ON)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: I
• Enhancement-mode: V
= 10 µA (max) (VDS = 20 V)
DSS
= 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
th
• Common drain
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage V
Drain current
Drain power
dissipation
(t = 10 s)
(Note 2a)
Drain power
dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 4)
Avalanche current IAR 6 A
Repetitive avalanche energy
Single-device value at dual operation
Channel temperature Tch 150 °C
Storage temperature range T
(Ta ==== 25°C)
DC (Note 1) ID 6
Pulse (Note 1) I
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
(Note 2a, 3b, 5)
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
= 16 mΩ (typ.)
20 V
DSS
20 V
DGR
±12 V
GSS
24
DP
P
1.1
D (1)
0.75
P
D (2)
P
0.6
D (1)
P
0.35
D (2)
E
46.8 mJ
AS
E
0.075 mJ
AR
−55~150 °C
stg
A
W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
1
2002-01-17
Thermal Characteristics
Characteristics Symbol Max Unit
TPCS8212
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (1)
R
th (ch-a) (2)
R
th (ch-a) (1)
R
th (ch-a) (2)
114
°C/W
167
208
°C/W
357
Marking
(Note 6)
Type
S8212
※
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a) (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: V
= 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 6 A
DD
Note 5: Repetitive rating; pulse width limited by max channel temperature.
Note 6: ○ on lower right of the marking indicates Pin 1.
* shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively)
2
2002-01-17
TPCS8212
<
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-OFF current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = 10 V, ID = 200 µA 0.5 1.2 V
Drain-source ON resistance R
Forward transfer admittance |Yfs| VDS = 10 V, ID = 3.0 A 5.5 11 S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr 6.4
Turn-ON time ton 22
Switching time
Fall time tf 10
Turn-OFF time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1 Q
Gate-drain (“miller”) charge Qgd
(Ta ==== 25°C)
VGS = ±10 V, VDS = 0 V ±10 µA
GSS
VDS = 20 V, VGS = 0 V 10 µA
DSS
V
(BR) DSS
V
(BR) DSX
ID = 10 mA, VGS = 0 V 20
ID = 10 mA, VGS = −12 V 8
VGS = 2.0 V, ID = 4.2 A 26 45
DS (ON)
iss
rss
oss
off
Q
gs1
VGS = 2.5 V, ID = 4.2 A 21 29
V
= 4.0 V, ID = 4.8 A 16 24
GS
1590
= 10 V, VGS = 0 V, f = 1 MHz
V
180
DS
5 V
VGS
0 V
20
g
3.5
Duty
V
DD
1%, t
=
∼
16 V, V
−
ID = 3 A
4.7 Ω
∼
V
10 V
−
DD
= 10 µs
w
= 5 V, ID = 6 A
GS
V
OUT
= 3.3 Ω
L
R
200
42
4.5
Source-Drain Ratings and Characteristics
(Ta ==== 25°C)
V
mΩ
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) I
Forward voltage (diode) V
24 A
DRP
IDR = 6 A, VGS = 0 V −1.2 V
DSF
3
2002-01-17
TPCS8212
5
4, 5
2
4
(A)
D
3
2
Drain current I
1
0
0 0.4 0.8 1.2 1.6 2.0
Drain-source voltage VDS (V)
10
8
(A)
D
6
4
Drain current I
2
100
25
0
0 1 2 3 4 5
Gate-source voltage VGS (V)
100
(S)
fs
10
Forward transfer admittance Y
1
0.1 1 10
Drain current ID (A)
– VDS
I
D
1.7
– VGS
I
D
Ta = −55°C
| – ID
|Y
fs
Ta = −55°C
Common source
Ta = 25°C
Pulse test
VGS = 1.4 V
Common source
VDS = 10 V
Pulse test
25
100
Common source
VDS = 10 V
Pulse test
– VDS
I
10
(A)
1.6
1.5
D
Drain current I
4, 5
2
1.8
8
6
4
2
0
0 1 2 3 4 5
Drain-source voltage VDS (V)
D
1.7
Common source
Ta = 25°C
Pulse test
1.6
1.5
VGS = 1.4 V
V
– VGS
0.8
0.6
(V)
DS
0.4
0.2
Drain-source voltage V
0
0 2 4 6 8 10
Gate-source voltage VGS (V)
DS
Common source
Ta = 25°C
Pulse test
1.5 3
ID = 12 A
6
DS (ON)
– ID
2.5
2
100
R
(mΩ)
10
DS (ON)
R
Drain-source ON resistance
1
0.1 1 10
VGS = 4 V
Drain current ID (A)
Common source
Ta = 25°C
Pulse test
4
2002-01-17
TPCS8212
60
Common source
Pulse test
50
40
(mΩ)
30
DS (ON)
20
R
VGS = 2.5 V VGS = 4 V
Drain-source ON resistance
10
0
−80 −40 0 40 120 160 80
Ambient temperature Ta (°C)
10000
Capacitance – V
1000
100
Capacitance C (pF)
Common source
Ta = 25°C
VGS = 0 V
f = 1 MHz
10
0.1 1 10
Drain-source voltage VDS (V)
1.2
1
(W)
D
0.8
0.6
0.4
0.2
Drain power dissipation P
0
0
Device mounted on a glass-epoxy board (a)
(1) Single-device operation (Note 3a)
(1)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(2)
(3)
(4)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
50 100 200 150
Ambient temperature Ta (°C)
DS (ON)
– Ta
R
ID = 1.5, 3, 6 A
– Ta
P
D
t = 10 s
VGS = 2 V
DS
C
C
I
– VDS
10
5
10
(A)
DR
Drain reverse current I
3
5
3
1
0 0.2 0.4 0.6 0.8 1.0 1.2
Drain-source voltage VDS (V)
DR
1
0
VGS = −1 V
Common source
Ta = 25°C
Pulse test
1.6
C
iss
oss
rss
100
(V)
1.2
th
0.8
0.4
Gate threshold voltage V
0
−80 −40 0 40 80 120 160
Ambient temperature Ta (°C)
V
– Ta
th
Common source
VDS = 10 V
ID = 200 µA
Pulse test
Dynamic input/output characteristics
(Note 2a)
(Note 2b)
20
VDS
16
(V)
DS
12
8
4
Drain-source voltage V
0
0 8 24 32 16
VDD = 16 V
Total gate charge Qg (nC)
Common source
ID = 6 A
Ta = 25°C
Pulse test
VGS
10
8
6
4
2
0
(V)
GS
Gate-source voltage V
5
2002-01-17
TPCS8212
100
50
ID max (pulse) *
30
5
(A)
3
D
1
0.5
0.3
Drain current I
0.1
* Single pulse Ta = 25°C
0.05
0.03
Curves must be derated linearly
with increase in temperature.
0.01
0.01 0.03 0.1 0.3 1 3 10 100 30
10
1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
500
(2) Single-device value at dual operation (Note 3b)
300
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
100
50
30
10
(°C/W)
5
th
r
3
1
0.5
Normalized transient thermal impedance
0.3
0.1
0.001 0.01 0.1 1 10 100 1000
Pulse width tw (S)
Safe operating area
Single-device value at dual
operation (Note 3b)
10 ms *
Drain-source voltage VDS (V)
1 ms *
V
max
DSS
r
th
− tw
(4)
(3)
(2)
(1)
Single pulse
6
2002-01-17
TPCS8212
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
7
2002-01-17
Loading...