TOSHIBA TPCP8H01 Technical data

J

C

J

查询TPCP8H01供应商

TOSHIBA Multi-Chip Transistor
Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

TPCP8H01

HIGH-SPEED SWITCHING APPLICATIONS

LORD SWITCHING APPLICATIONS

STROBE FLASH APPLICATIONS

・Multi-chip discrete device; built-in NPN transistor for main switch and

N-ch MOS FET for drive

・High DC current gain: h
・Low collector-emitter saturation voltage: V

= 250 to 400 (IC = 0.5 A) (NPN transistor)

FE

CE (sat)

= 0.13 V (max)

(NPN transistor)
・High-speed switching: t

= 25 ns (typ.) (NPN transistor)

f

Absolute Maximum Ratings

(Ta = 25°C)

Transistor

Characteristics Symbol Rating Unit

Collector-base voltage V

Collector-emitter voltage

Emitter-base voltage V

Collector current

Base current IB

Collector power dissipation (NPN) PC (Note 2)

Junction temperature Tj 150 °C

DC (Note 1)

Pulse (Note 1)

CBO

V

CEX

V

CEO

EBO

I

5.0

C

I

7.0

CP

100

80

50

6

0.5

1.0

V

V

V

A

A

W

MOS FET

EDE

EITA -

TOSHIBA 2-3V1E

Weight : 0.017g (Typ.)

0.33±0.05

8

0.475

0.025

S

1. SOURCE

2. COLLECTOR

3. COLLECTOR

4. COLLECTOR

0.65

0.05

2.9±0.1

S

0.17±0.02

M

-

Circuit Configuration

TPCP8H01

A

5

2.4±0.1

2.8±0.1

41

B

A

0.8±0.05

0.28

1.12

1.12

0.28

5. BASE

6. EMITTER

7. GATE

8. DRAIN

0.05

+0.1

-0.11

+0.13

-0.12

+0.13

-0.12

+0.1

-0.11

B

M

Characteristics Symbol Rating Unit

Drain-Source Voltage V

Gate-Source Voltage V

Drain Current

Channel Temperature Tch 150 °C

DC

Pulse

DSS

GSS

I

100

D

I

200

DP

20

±10

V

V

mA

1 2 3 4

Note 1: Ensure that the junction (channel) temperature does not exceed 150℃.

Note 2: Device mounted on a glass-epoxy board (FR-4, 25.4×25.4×1.6 mm, Cu area: 645 mm2)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Please handle with caution.

1

2006-11-13

Common Absolute Maximum Rating (Ta = 25°C)

Characteristics Symbol Rating Unit

TPCP8H01

Storage temperature range T

−55 to 150 °C

stg

Marking (Note 4)

8H01

*

Note 4: The mark “z” on the lower left of the marking indicates Pin 1.

* W

eekly code (three digits)

Type

Lot No.

(Weekly code)

Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)

Year of manufacture
(Last digit of the of the calendar year)

Electrical Characteristics

(Ta = 25°C)

Transistor

Characteristics Symbol Test Condition Min Typ. Max Unit

V

Collector cut-off current I

Emitter cut-off current I

Collector-emitter breakdown voltage V

DC current gain

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz

Rise time tr

Switching time

Figure 1 Switching Time Test Circuit & Timing Chart

Storage time t

Fall time t

20 μs

I

B1

Duty cycle < 1%

Input

I

B2

I

B1

I

B2

CBO

EBO

(BR) CEO

hFE (1)

(2)

h

FE

CE (sat)

BE (sat)

stg

f

V

CC

L

R

Output

= 100 V, IE = 0 ⎯ ⎯ 100

CB

V

= 6 V, IC = 0 ⎯ ⎯ 100

EB

IC = 10 mA, IB = 0 50 ⎯ ⎯

VCE = 2 V, IC = 0.5 A 250 ⎯ 400

VCE = 2 V, IC = 1.6 A 100 ⎯ ⎯

I

= 1.6 A, IB = 53 mA ⎯ 80 130

C

I

= 1.6 A, IB = 53 mA ⎯ 0.8 1.1

C

See Figure 1 circuit diagram.

≒ 24 V, RL = 15 Ω

V

CC

= −IB2 = 53 mA

I

B1

⎯ 22 ⎯

⎯ 65 ⎯

⎯ 500 ⎯

⎯ 25 ⎯

nA

nA

V

mV

V

pF

ns

2

2006-11-13

MOS FET

VoutRLVDD

V

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain-Source breakdown voltage V

Drain cut-off current I

Gate threshold voltage V th

Forward transfer admittance ｜Yfs｜

Drain-Source ON resistance R

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Turn-on time ton

Switching time

Turn-off time t

GSS

(BR)DSS

DSS

DS(ON)

iss

rss

oss

off

Figure 2 Switching Time Test Circuit &

Timing Chart

2.5V

in

0

10us

Rg

Precautions

V

= ±10 V, VDS = 0 ⎯ ⎯ ±1

GS

= 0.1 mA, VGS = 0 20 ⎯ ⎯

I

D

V

= 20 V, VGS = 0 ⎯ ⎯ 1

DS

= 3 V, ID = 0.1 mA 0.6 ⎯ 1.1

V

DS

V

= 3 V, ID = 10 mA 40 ⎯ ⎯

DS

ID = 10 mA , VGS = 4.0 V ⎯ 1.5 3

ID = 10 mA , VGS = 2.5 V ⎯ 2.2 4

ID = 1 mA , VGS = 1.5 V ⎯ 5.2 15

⎯ 9.3 ⎯

= 3 V, VGS = 0, f= 1 MHz

V

DS

See Figure 2 circuit diagram.

V

≒ 3 V, RL = 300 Ω

DD

= 0 to 2.5 V

V

GS

⎯ 4.5 ⎯

⎯ 9.8 ⎯

⎯ 70 ⎯

⎯ 125 ⎯

Gate Pulse Width 10μs, tr,tf<5ns
(Zout=50Ω),Common Source,Ta=25°C
Duty Cycle<1%

TPCP8H01

μA

V

μA

V

mS

Ω

pF

ns

Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 μA for
this product. For normal switching operation, V
lower voltage than V

th.

(The relationship can be established as follows: V
Please take this into consideration when using the device. The V

requires a higher voltage than Vth and V

GS (on)

GS (off)

< Vth < V

GS

)

GS (on)

recommended voltage for turning on this

GS (off)

requires a

product is 2.5 V or higher.

3

2006-11-13