TOSHIBA TPCF8102 Technical data

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

TPCF8102

Notebook PC Applications

Portable Equipment Applications

•

Low drain-source ON resistance: R

•

High forward transfer admittance: |Y

•

Low leakage current: I

•

Enhancement mode: V

(V

= −10 µA (max) (VDS = −20 V)

DSS

= −0.5 to −1.2 V

th

= −10 V, ID = −200 µA)

DS

= 24 mΩ (typ.)

DS (ON)

| = 14 S (typ.)

fs

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20 kΩ) V

Gate-source voltage V

Drain current

Drain power dissipation (t = 5 s) (Note 2a)

Drain power dissipation (t = 5 s) (Note 2b)

Single pulse avalanche energy (Note 3) EAS

Avalanche current IAR

Repetitive avalanche energy (Note 4) EAR

Channel temperature Tch

Storage temperature range T

(Ta = 25°C)

DC (Note 1)

Pulsed (Note 1)

DSS

DGR

GSS

I

D

I

DP

P

D

P

D

stg

Thermal Characteristics

−20

8

±

6

−

24

−

2.5 W

0.7 W

5.9 mJ

−3 A

0.25

150

55~150

−

V

A

mJ

°C

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3U1A

Weight: 0.011 g (typ.)

Circuit Configurati on

86

7 5

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient (t = 5 s) (Note 2a)

Thermal resistance, channel to ambient (t = 5 s) (Note 2b)

R

th (ch-a)

R

th (ch-a)

50.0 °C/W

178.6 °C/W

Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

1

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4

TPCF8102

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Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut-off current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = −10 V, ID = −200 µA

Drain-source ON resistance

Forward transfer admittance |Yfs| VDS = −10 V, ID = −3.0 A 7 14 ⎯ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ⎯ 7 ⎯

Turn-on time ton ⎯ 13 ⎯

Switching time

Fall time tf ⎯ 21 ⎯

Turn-off time t

Total gate charge (gate-source plus gate-drain)

Gate-source charge Qgs ⎯ 14 ⎯

Gate-drain (“miller”) charge Qgd

(Ta = 25°C)

VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±10 µA

GSS

VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 µA

DSS

V

(BR) DSSID

V

(BR) DSXID

R

DS (ON)

R

DS (ON)

R

DS (ON)

iss

rss

oss

off

Q

⎯ 19 ⎯

g

= −10 mA, VGS = 0 V −20 ⎯ ⎯

= −10 mA, VGS = 8 V

VGS = −1.8 V, ID = −1.5 A

VGS = −2.5 V, ID = −3.0 A ⎯ 36 41

VGS = −4.5 V, ID = −3.0 A ⎯ 24 30

⎯ 1550 ⎯

= −10 V, VGS = 0 V, f = 1 MHz

V

⎯ 215 ⎯

DS

0 V

V

GS

5 V

−

Ω

4.7

Duty

1%, tw = 10 µs

16 V, V

V

−

DD

I

= −6.0 A

D

−

ID = −3.0 A

V

OUT

Ω

3.33

=

L

R

10 V

V

−

DD

= −5 V,

GS

12

0.5

−

⎯

⎯ 68 ⎯

⎯ 5 ⎯

⎯

⎯ −

67 90

265 ⎯

⎯

1.2 V

Source-Drain Ratings and Characteristics

(Ta = 25°C)

V

mΩ

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current

Forward voltage (diode) V

Pulse (Note 1) I

DRP

DSF

IDR = −6.0 A, VGS = 0 V ⎯ ⎯ 1.2 V

⎯

2

⎯

⎯ −

24 A

2004-07-06

TPCF8102

Marking

(or abbreviation code)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

(Note 5)

Part No.

Lot code (month)

F3B

Pin #1

(a)

Lot code

(year)

Lot No.

Product-specific code

A line indicates lead (Pb)-free package or lead (Pb)-free finish.

FR-4

25.4 × 25.4 × 0.8

Unit: (mm)

FR-4

25.4 × 25.4 × 0.8

Unit: (mm)

(b)

Note 3: V

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

Note 5: A dot on the lower left of the marking indicates Pin 1.

= −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −3.0 A

DD

3

2004-07-06