查询TPCF8102供应商
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8102
TPCF8102
Notebook PC Applications
Portable Equipment Applications
•
Low drain-source ON resistance: R
•
High forward transfer admittance: |Y
•
Low leakage current: I
•
Enhancement mode: V
(V
= −10 µA (max) (VDS = −20 V)
DSS
= −0.5 to −1.2 V
th
= −10 V, ID = −200 µA)
DS
= 24 mΩ (typ.)
DS (ON)
| = 14 S (typ.)
fs
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage V
Drain current
Drain power dissipation (t = 5 s)
(Note 2a)
Drain power dissipation (t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3) EAS
Avalanche current IAR
Repetitive avalanche energy (Note 4) EAR
Channel temperature Tch
Storage temperature range T
(Ta = 25°C)
DC (Note 1)
Pulsed (Note 1)
DSS
DGR
GSS
I
D
I
DP
P
D
P
D
stg
Thermal Characteristics
−20
−20
8
±
6
−
24
−
2.5 W
0.7 W
5.9 mJ
−3 A
0.25
150
55~150
−
V
V
V
A
mJ
°C
°C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3U1A
Weight: 0.011 g (typ.)
Circuit Configurati on
86
7 5
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
R
th (ch-a)
R
th (ch-a)
50.0 °C/W
178.6 °C/W
Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
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4
TPCF8102
∼
∼
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-off current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = −10 V, ID = −200 µA
Drain-source ON resistance
Forward transfer admittance |Yfs| VDS = −10 V, ID = −3.0 A 7 14 ⎯ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr ⎯ 7 ⎯
Turn-on time ton ⎯ 13 ⎯
Switching time
Fall time tf ⎯ 21 ⎯
Turn-off time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge Qgs ⎯ 14 ⎯
Gate-drain (“miller”) charge Qgd
(Ta = 25°C)
VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±10 µA
GSS
VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 µA
DSS
V
(BR) DSSID
V
(BR) DSXID
R
DS (ON)
R
DS (ON)
R
DS (ON)
iss
rss
oss
off
Q
⎯ 19 ⎯
g
= −10 mA, VGS = 0 V −20 ⎯ ⎯
= −10 mA, VGS = 8 V
VGS = −1.8 V, ID = −1.5 A
VGS = −2.5 V, ID = −3.0 A ⎯ 36 41
VGS = −4.5 V, ID = −3.0 A ⎯ 24 30
⎯ 1550 ⎯
= −10 V, VGS = 0 V, f = 1 MHz
V
⎯ 215 ⎯
DS
0 V
V
GS
5 V
−
Ω
4.7
Duty
1%, tw = 10 µs
16 V, V
V
−
DD
I
= −6.0 A
D
−
ID = −3.0 A
V
OUT
Ω
3.33
=
L
R
10 V
V
−
DD
= −5 V,
GS
12
0.5
−
⎯
⎯
⎯ 68 ⎯
⎯ 5 ⎯
⎯
⎯ −
67 90
265 ⎯
⎯
1.2 V
Source-Drain Ratings and Characteristics
(Ta = 25°C)
V
mΩ
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse
current
Forward voltage (diode) V
Pulse (Note 1) I
DRP
DSF
IDR = −6.0 A, VGS = 0 V ⎯ ⎯ 1.2 V
⎯
2
⎯
⎯ −
24 A
2004-07-06
TPCF8102
Marking
(or abbreviation code)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
(Note 5)
Part No.
Lot code (month)
F3B
Pin #1
(a)
Lot code
(year)
Lot No.
Product-specific code
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
(b)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: A dot on the lower left of the marking indicates Pin 1.
= −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −3.0 A
DD
3
2004-07-06
TPCF8102
(A)
D
Drain current I
−5
−5
−4.5
−4
−3
−2
1
−
0
0 −0.2 −0.4 −0.6 −0.8 −1.0
Drain-source voltage VDS (V)
I
– VDS
D
−1.8 −1.9 −2.5
−2
−3
−4
Common source
Ta = 25 °C Pulse test
−1.7
−1.6
−1.5
VGS = −1.4 V
−10
−8
(A)
D
−6
−4
Drain current I
2
−
0
0 −1 −2 −3 −4 −5
−2−2.5
−3
−4
−5
Drain-source voltage VDS (V)
−10
(A)
Drain current I
Common source
VDS = −10 V
Pulse test
−8
D
−6
−4
2
−
0
0 −0.5 −1.0 −1.5 −2.0 −2.5
Ta = 100°C
Gate-source voltage VGS (V)
I
– VGS
D
Ta = 25°C
−0.5
−0.4
(V)
DS
−0.3
−0.2
Ta = −55°C
0.1
−
Drain-source voltage V
0
0 −2 −4 −6 −10
Gate-source voltage VGS (V)
100
| (S)
fs
Common source
VDS = −10 V
Pulse test
Ta = 25°C
10
1
Forward transfer admittance |Y
0.1
−0.1 −1 −10 −100
Drain current ID (A)
|Y
| – ID
fs
Ta = −55°C
Ta = 100°C
1000
Common source
Ta = 25°C
Pulse test
100
)
Ω
(m
DS (ON)
R
10
Drain-source on resistance
1
−0.1 −1 −10 −100
Drain current ID (A)
I
D
V
DS
R
DS (ON)
1.8 V
−
– VDS
– VGS
– ID
VGS = −4.5 V
Common source
Ta = 25°C Pulse test
−1.9
−1.8
−1.7
−1.6
−1.5
VGS = −1.4 V
Common source
Ta = 25°C
Pulse test
ID = −6 A
−3 A
−1.5 A
−8
2.5 V
−
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2004-07-06
TPCF8102
160
Drain-source on resistance
Common source
Pulse test
120
)
Ω
(m
80
VGS = −1.8 V
DS (ON)
R
40
−2.5 V
−4.5 V
0
−80 −40 0 40 80 120 160
Ambient temperature Ta (°C)
R
DS (ON)
−2.5 A
ID = −1.5 A
– Ta
ID = −1.5, −2.5 A
ID = −1.5, −2.5, −6 A
−6 A
−100
Common source
Ta = 25°C
Pulse test
(A)
DR
−2.0 V
−10
−4 V
−1.8 V
−1 V
Drain reverse current I
−1
0
0.4 0.8 1.2 1.6 2
Drain-source voltage VDS (V)
10000
VGS = 0 V
f = 1 MHz
Ta = 25°C
Capacitance – V
1000
DS
C
iss
C
oss
2.0
Common source
VDS = −10 V
ID = −200 µA
Pulse test
(V)
1.5
th
1.0
C
100
Capacitance C (pF)
10
0.1 1.0 10 100
Drain-source voltage VDS (V)
rss
0.5
Gate threshold voltage V
0
−80 −40 0 40 80 120 160
Ambient temperature Ta (°C)
3
(1) t = 5 s
2.5
(W)
D
2
1.5
(1) DC
1
(2) t = 5 s
0.5
Drain power dissipation P
(2) DC
0
0 40 80 120 160
Ambient temperature Ta (°C)
P
– Ta
D
(1) Device mounted on a
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
Dynamic input/output characteristics
−20
V
−16
(V)
DS
Drain-source voltage V
DS
−12
−8
4
−
0
0 8 16 24 32 40
Total gate charge Qg (nC)
I
– VDS
DR
VGS = 0 V
V
– Ta
th
−4 V
−8 V
Common source
ID = −6 A
Ta = 25°C
Pulse test
VGS
VDD = −16 V
−20
−16
−12
−8
−
0
(V)
GS
4
Gate-source voltage V
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2004-07-06
TPCF8102
1000
Device mounted on a glass-epoxy board (b) (Note 2b)
100
(°C/W)
th
10
1
Transient thermal impedance r
−100
ID max (pulsed)*
10
−
(A)
D
0.1
1 m 10 m 100 m 1 10 100
Safe operating area
1 ms*
10 ms*
Pulse width tw (s)
−1
*
: Single pulse
Drain current I
Ta = 25°C
Curves must be derated
linearly with inc rease in
temperature
−0.1
−0.1 −1 −10 −100
Drain-source voltage VDS (V)
V
max
DSS
r
– tw
th
Device mounted on a glass-epoxy board (a) (Note 2a)
1000
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2004-07-06
TPCF8102
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
7
2004-07-06
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