Toshiba TPCF8102 Schematic [ru]
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8102
TPCF8102
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: R
DS (ON)
• High forward transfer admittance: |Y
• Low leakage current: I
= −10 μA (max) (VDS = −20 V)
DSS
• Enhancement mode: Vth = −0.5 to −1.2 V
(V
= −10 V, ID = −200 μA)
DS
Absolute Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage V
Drain current
Drain power dissipation (t = 5 s)
(Note 2a)
Drain power dissipation (t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3) EAS
Avalanche current IAR
Repetitive avalanche energy (Note 4) EAR
Channel temperature Tch
Storage temperature range T
DC (Note 1)
Pulsed (Note 1)
(Ta = 25°C)
= 24 mΩ (typ.)
| = 14 S (typ.)
fs
DSS
DGR
GSS
I
−6
D
I
−24
DP
P
D
P
D
stg
−20
−20
±8
2.5 W
0.7 W
5.9 mJ
−3 A
0.25
150
−55~150
V
V
V
A
mJ
°C
°C
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3U1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Circuit Configuration
8 6
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
R
R
50.0 °C/W
th (ch-a)
178.6 °C/W
th (ch-a)
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
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TPCF8102
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∼
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Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-off current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = −10 V, ID = −200 μA −0.5 ⎯ −1.2 V
Drain-source ON resistance
Forward transfer admittance |Yfs| VDS = −10 V, ID = −3.0 A 7 14 ⎯ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr ⎯ 7 ⎯
Turn-on time ton ⎯ 13 ⎯
Switching time
Fall time tf ⎯ 21 ⎯
Turn-off time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge Qgs ⎯ 14 ⎯
Gate-drain (“miller”) charge Qgd
(Ta = 25°C)
VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±10 μA
GSS
VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 μA
DSS
V
(BR) DSSID
V
(BR) DSXID
R
DS (ON)
R
DS (ON)
R
DS (ON)
⎯ 1550 ⎯
iss
⎯ 215 ⎯
rss
oss
off
⎯ 19 ⎯
Q
g
= −10 mA, VGS = 0 V −20 ⎯ ⎯
= −10 mA, VGS = 8 V −12 ⎯ ⎯
VGS = −1.8 V, ID = −1.5 A ⎯ 67 90
VGS = −2.5 V, ID = −3.0 A ⎯ 36 41
VGS = −4.5 V, ID = −3.0 A ⎯ 24 30
V
= −10 V, VGS = 0 V, f = 1 MHz
DS
0 V
V
GS
−5 V
Duty
1%, tw = 10 μs
−16 V, VGS = −5 V,
V
DD
= −6.0 A
I
D
4.7 Ω
ID = −3.0 A
V
DD
V
= 3.33 Ω
L
R
−10 V
OUT
⎯ 265 ⎯
⎯ 68 ⎯
⎯ 5 ⎯
Source-Drain Ratings and Characteristics
(Ta = 25°C)
V
mΩ
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse
current
Forward voltage (diode) V
Pulse (Note 1) I
DRP
DSF
IDR = −6.0 A, VGS = 0 V ⎯ ⎯ 1.2 V
⎯ ⎯ ⎯ −24 A
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TPCF8102
A
Marking
(or abbreviation code)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
(Note 5)
Part No.
Lot code (month)
F3B
Pin #1 Lot code
(year)
Lot No.
Product-specific code
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
(a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: A dot on the lower left of the marking indicates Pin 1.
= −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −3.0 A
DD
(b)
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2006-11-16
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