TOSHIBA TPCA8030-H Datasheet

TPCA8030-H

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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS V-H)

TPCA8030-H

High-Efficiency DC-DC Converter Applications

Unit: mm

0.05 M

0.15 ± 0.05

0.595

0.166 ± 0.05

0.8 ± 0.1 3.5 ± 0.2 1.1 ± 0.2

Notebook PC Applications Portable Equipment Applications

• Small footprint due to a small and thin package

• High-speed switching

• Small gate charge: Q

• Low drain-source ON-resistance: R

• High forward transfer admittance: |Y

• Low leakage current: I

• Enhancement mode: V

Absolute Maximum Ratings

Characteristic Symbol Rating Unit

Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage

Drain current

Drain power dissipation (Tc=25℃) PD 30 W Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy

Avalanche current IAR 24 A

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Repetitive avalanche energy

(Tc = 25℃) (Note 4) Channel temperature Storage temperature range

= 5.0 nC (typ.)

DS (ON)

= 10 μA (max) (VDS = 30 V)

DSS

= 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)

(Ta = 25°C)

DC (Note 1) ID 24 Pulsed (Note 1) I

(Note 3)

= 7.3 mΩ (typ.)

| = 60 S (typ.)

30 V

DSS

30 V

DGR

±20 V

GSS

2.8 W

1.6 W

75 mJ

3.0 mJ

150 °C

−55 to 150 °C

stg

6.0 ± 0.3

0.95 ± 0.05

1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN

JEDEC ⎯ JEITA ⎯ TOSHIBA 2-5Q1A

Weight: 0.069 g (typ.)

Circuit Configuration

0.4 ± 0.1

1.27

5.0 ± 0.2

0.05

0.6 ± 0.1

4.25 ± 0.2

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Note: For Notes 1 to 4, refer to the next page.

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Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the

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reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba

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Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

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This transistor is an electrostatic-sensitive device. Handle with care.

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Thermal Characteristics

Characteristic Symbol Max Unit

TPCA8030-H

Thermal resistance, channel to case (Tc = 25℃)

Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b)

Marking

Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

(Note 5)

8030-H

※

Part number TPCA

Lot No.

4.17 °C/W

th (ch-c)

44.6 °C/W

th (ch-a)

78.1 °C/W

th (ch-a)

Note 3: V Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5:

* Weekly code: (Three digits)

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(a)

= 24 V, Tch = 25°C (initial), L = 100 μH, RG = 25 Ω, IAR = 24 A

Week of manufacture (01 for the first week of the year, continuing up to 52 or 53)

Year of manufacture (The last digit of the year)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(b)

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TPCA8030-H

Electrical Characteristics

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current I Drain cutoff current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 ⎯ 2.5 V

Drain-source ON-resistance R

Forward transfer admittance |Yfs| VDS = 10 V, ID = 12 A 30 60 ⎯ S Input capacitance C Reverse transfer capacitance C Output capacitance C Gate resistance Rg VDS = 10 V, VGS = 0 V, f = 5 MHz ⎯ 1.0 1.5 Ω

Rise time tr ⎯ 2.8 ⎯

Turn-on time ton ⎯ 9.3 ⎯

Switching time

Fall time tf ⎯ 3.4 ⎯

Turn-off time t

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1 Q Gate-drain (“Miller”) charge Qgd ⎯ 3.0 ⎯ Gate switch charge QSW

(Ta = 25°C)

Source-Drain Ratings and Characteristics

VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA

GSS

VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA

DSS

(BR) DSSID

(BR) DSXID

DS (ON)

⎯ 1433 2150

iss

⎯ 83 125

rss

oss

off

gs1

= 10 mA, VGS = 0 V 30 ⎯ ⎯ = 10 mA, VGS = −20 V 15 ⎯ ⎯

VGS = 4.5 V, ID = 12 A ⎯ 9.6 13.4

= 10 V, ID = 12 A ⎯ 7.3 11.0

= 10 V, VGS = 0 V, f = 1 MHz

4.7 Ω

= 10 μs

ID = 12 A

= 1.25Ω R

VDD ≈ 15 V

OUT

10 V

0 V

Duty ≤ 1%, t V

≈ 24 V, VGS = 10 V, ID = 24 A ⎯ 21 ⎯

≈ 24 V, VGS = 5 V, ID = 24 A ⎯ 11 ⎯

⎯ 4.7 ⎯

≈ 24 V, VGS = 10 V, ID = 24 A

(Ta = 25°C)

⎯ 303 ⎯

⎯ 21 ⎯

⎯ 5.0 ⎯

mΩ

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) I

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Forward voltage (diode) V

⎯ ⎯ ⎯ 72 A

DRP

IDR = 24 A, VGS = 0 V ⎯ ⎯ −1.2 V

DSF

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+ 4 hidden pages

TOSHIBA TPCA8030-H Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

Circuit Configuration

Thermal Characteristics