TOSHIBA TPCA8028-H Datasheet

TPCA8028-H

A

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)

TPCA8028-H

High-Efficiency DC/DC Converter Applications

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to a small and thin package

• High-speed switching

• Small gate charge: Q

• Low drain-source ON-resistance: R

• High forward transfer admittance: |Y

• Low leakage current: I

• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings

Characteristic Symbol Rating Unit

Drain-source voltage

Drain-gate voltage (RGS = 20 kΩ)

Gate-source voltage

Drain current

Drain power dissipation (Tc=25℃) PD 45 W

Drain power dissipation (t = 10 s)

(Note 2a)

Drain power dissipation (t = 10 s)

(Note 2b)

Single-pulse avalanche energy

Avalanche current IAR 50 A

Repetitive avalanche energy

(Tc=25℃) (Note 4)

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

= 20 nC (typ.)

SW

DS (ON)

= 10 μA (max) (VDS = 30 V)

DSS

(Ta = 25°C)

DC (Note 1) ID 50

Pulsed (Note 1) I

(Note 3)

= 2.0 mΩ (typ.)

| = 166 S (typ.)

fs

V

30 V

DSS

V

30 V

DGR

V

±20 V

GSS

150

DP

P

2.8 W

D

P

1.6 W

D

E

325 mJ

AS

E

4.03 mJ

AR

T

150 °C

ch

T

−55 to 150 °C

stg

A

Unit: mm

0.5±0.1
8

6.0±0.3

5.0±0.2

1

0.95±0.05

S

1,2,3:SOURCE 4:GATE
5,6,7,8:DRAIN

5.0±0.2

0.05 S

1

0.6±0.1

4.25±0.2

0.05 M

5

0.15±0.05

4

0.595

A

0.166±0.05

1.1±0.2

4

3.5±0.2

58

0.8±0.1

0.4±0.1

1.27

JEDEC ―

JEITA ―

TOSHIBA 2-5Q1A

Weight: 0.069 g (typ.)

Circuit Configuration

8 6

1 2 3

7 5

4

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

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Thermal Characteristics

Characteristic Symbol Max Unit

TPCA8028-H

Thermal resistance, channel to case

(Tc=25℃)

Thermal resistance, channel to ambient

(t = 10 s) (Note 2a)

Thermal resistance, channel to ambient

(t = 10 s) (Note 2b)

R

R

R

2.78 °C/W

th (ch-c)

44.6 °C/W

th (ch-a)

78.1 °C/W

th (ch-a)

Marking

(Note 5)

8028-H

※

Type TPCA

Lot No.

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: Device mounted on a glass-epoxy board

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(a)

Note 3: V

= 24 V, Tch = 25°C (initial), L = 100 μH, RG = 25 Ω, IAR = 50 A

DD

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

Note 5:

* Weekly code: (Three digits)

Week of manufacture
(01 for first week of year, continuing up to 52 or 53)

Year of manufacture
(The last digit of the calendar year)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(b)

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2008-01-22

TPCA8028-H

∼

∼

∼

∼

Electrical Characteristics

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cutoff current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.3 V

Drain-source ON-resistance R

Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 83 166 ⎯ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Gate resistance Rg VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time tr ⎯ 5.0 ⎯

Turn-on time ton ⎯ 16 ⎯

Switching time

Fall time tf ⎯ 9.8 ⎯

Turn-off time t

Total gate charge
(gate-source plus gate-drain)

Gate-source charge 1 Q

Gate-drain (“Miller”) charge Qgd ⎯ 12 ⎯

Gate switch charge QSW

(Ta = 25°C)

VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA

GSS

VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA

DSS

V

(BR) DSSID

V

(BR) DSXID

DS (ON)

⎯ 6000 7800

iss

⎯ 380 610

rss

oss

off

Q

g

gs1

= 10 mA, VGS = 0 V 30 ⎯ ⎯

= 10 mA, VGS = −20 V 15 ⎯ ⎯

VGS = 4.5 V, ID = 25 A ⎯ 2.3 3.2

= 10 V, ID = 25 A ⎯ 2.0 2.8

V

GS

V

= 10 V, VGS = 0 V, f = 1 MHz

DS

4.7 Ω

= 10 μs

w

ID = 25A

V

DD

V

= 0.6Ω

L

R

15 V

OUT

10 V

V

GS

0 V

Duty ≤ 1%, t

V

24 V, VGS = 10 V, ID = 50 A ⎯ 88 ⎯

DD

V

24 V, VGS = 5 V, ID = 50 A ⎯ 46 ⎯

DD

⎯ 16 ⎯

V

24 V, VGS = 10 V, ID = 50 A

DD

⎯ 1100 ⎯

⎯ 1.0 1.5 Ω

⎯ 71 ⎯

⎯ 20 ⎯

Source-Drain Ratings and Characteristics

(Ta = 25°C)

V

mΩ

pF

ns

nC

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) I

Forward voltage (diode) V

⎯ ⎯ ⎯ 150 A

DRP

IDR = 50 A, VGS = 0 V ⎯ ⎯ −1.2 V

DSF

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