TOSHIBA TPC8403 Technical data
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TPC8403
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
(P Channel U-MOSII/N Channel U-MOSII)
TPC8403
Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: P Channel R
N Channel R
• High forward transfer admittance: P Channel |Y
N Channel |Y
• Low leakage current: P Channel I
N Channel I
DSS
DSS
• Enhancement mode
: P Channel V
: N Channel V
= −1.0~−2.2 V (VDS = −10 V, ID = −1 mA)
th
= 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
th
Maximum Ratings
Characteristics Symbol
Drain-source voltage V
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage V
Drain current
Drain power
dissipation
(t = 10s)
(Note 2a)
Drain power
dissipation
(t = 10s)
(Note 2b)
Single pulse avalanche energy EAS
Avalanche current IAR
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
Channel temperature Tch 150 °C
Storage temperature range T
DC (Note 1) ID −4.5 6
Pulse (Note 1) I
Single-device operation
(Note 3a)
Single-device value at
dual operation
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Ta = 25°C)
(Note 3b)
(Note 3b)
P Channel N Channel
30 30 V
DSS
DGR
GSS
DP
P
D(1)
P
D(2)
P
D(1)
P
D(2)
E
AR
stg
−
−30 30 V
±20 ±20 V
−18 24
1.5 1.5
1.1 1.1
0.75 0.75
0.45 0.45
26.3
(Note 4a)
4.5 6 A
−
0.11 mJ
−55~150 °C
= 45 mΩ (typ.)
DS (ON)
= 25 mΩ (typ.)
DS (ON)
| = 6.2 S (typ.)
fs
| = 7.8 S (typ.)
fs
= −10 µA (VDS = −30 V)
= 10 µA (VDS = 30 V)
Rating
46.8
(Note 4b)
Unit
A
W
mJ
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1E
Weight: 0.080 g (typ.)
Circuit Configurati on
8 7 6 5
1 2
N-ch P-ch
3 4
Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-06
Thermal Characteristics
Characteristics Symbol Max Unit
TPC8403
Thermal resistance, channel to ambient
(t = 10s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10s) (Note 2b)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 2a)
Single-device value at
dual operation
(Note 2b)
R
th (ch-a) (1)
R
th (ch-a) (2)
R
th (ch-a) (1)
R
th (ch-a) (2)
83.3
114
°C/W
167
278
Marking
TPC8403
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4:
a) V
= −24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = −4.5 A
DD
b) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 6.0 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: • on lower left of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
Year of manufacture
(The last digit of a year)
2
2004-07-06
TPC8403
∼
Ω
∼
P-channel
Electrical Characteristics
Gate leakage current I
Drain cut-OFF current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = −10 V, ID = −1 mA
Drain-source ON resistance R
Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.2 A 3.1 6.2 ⎯ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1 Qgs1 ⎯ 4 ⎯
Gate-drain (“miller”) charge Qgd
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Rise time tr
Turn-ON time ton
Fall time tf
Turn-OFF time t
VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA
GSS
VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 µA
DSS
V
(BR) DSSID
V
(BR) DSXID
DS (ON)
iss
rss
oss
off
Q
g
= −10 mA, VGS = 0 V −30 ⎯ ⎯
= −10 mA, VGS = 20 V
VGS = −4.5 V, ID = −2.2 A
V
= −10 V, ID = −2.2 A ⎯ 45 55
GS
⎯ 940 ⎯
= −10 V, VGS = 0 V, f = 1 MHz
V
⎯ 270 ⎯
DS
Ω
4.7
V
DD
GS
ID = −2.2 A
15 V
−
= −10 V,
V
RL =
6.8
OUT
V
GS
−
Duty
V
DD
I
= −4.5 A
D
0 V
10 V
1%, tw = 10 µs
24 V, V
−
15
−
1.0
−
⎯
⎯ 390 ⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯ −
66 90
13 ⎯
21 ⎯
25 ⎯
73 ⎯
18 ⎯
4 ⎯
⎯
2.2 V
Source-Drain Ratings and Characteristics
(Ta = 25°C)
V
mΩ
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) I
Forward voltage (diode) V
⎯ ⎯ ⎯ −18 A
DRP
IDR = −4.5 A, VGS = 0 V ⎯ ⎯ 1.2 V
DSF
3
2004-07-06
N-channel
TPC8403
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-OFF current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3
Drain-source ON resistance R
Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 3.9 7.8 ⎯ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr
Turn-ON time ton ⎯ 18 ⎯
Switching time
Fall time tf ⎯ 6.5 ⎯
Turn-OFF time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1 Qgs1 ⎯ 3 ⎯
Gate-drain (“miller”) charge Qgd
(Ta = 25°C)
VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA
GSS
VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA
DSS
V
(BR) DSSID
V
(BR) DSXID
DS (ON)
iss
rss
oss
off
⎯ 17 ⎯
Q
g
= 10 mA, VGS = 0 V 30 ⎯ ⎯
= 10 mA, VGS = −20 V 15
VGS = 4.5 V, ID = 3 A
V
= 10 V, ID = 3 A ⎯ 25 33
GS
⎯ 850 ⎯
= 10 V, VGS = 0 V, f = 1 MHz
V
⎯ 180 ⎯
DS
V
4.7 Ω
DD
ID = 3.0 A
RL
15 V
V
OUT
=
5.0 Ω
10 V
V
GS
0 V
Duty
1%, tw = 10 µs
24 V, VGS = 10 V,
V
DD
I
= 6 A
D
⎯
⎯ 270 ⎯
⎯
⎯ 27 ⎯
⎯ 4 ⎯
⎯
2.5 V
⎯
38 46
11 ⎯
⎯
Source-Drain Ratings and Characteristics
(Ta = 25°C)
V
mΩ
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) I
Forward voltage (diode) V
⎯ ⎯ ⎯ 24 A
DRP
IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.2 V
DSF
4
2004-07-06
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