查询TPC8403供应商
TPC8403
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
(P Channel U-MOSII/N Channel U-MOSII)
TPC8403
Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: P Channel R
N Channel R
• High forward transfer admittance: P Channel |Y
N Channel |Y
• Low leakage current: P Channel I
N Channel I
DSS
DSS
• Enhancement mode
: P Channel V
: N Channel V
= −1.0~−2.2 V (VDS = −10 V, ID = −1 mA)
th
= 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
th
Maximum Ratings
Characteristics Symbol
Drain-source voltage V
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage V
Drain current
Drain power
dissipation
(t = 10s)
(Note 2a)
Drain power
dissipation
(t = 10s)
(Note 2b)
Single pulse avalanche energy EAS
Avalanche current IAR
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
Channel temperature Tch 150 °C
Storage temperature range T
DC (Note 1) ID −4.5 6
Pulse (Note 1) I
Single-device operation
(Note 3a)
Single-device value at
dual operation
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Ta = 25°C)
(Note 3b)
(Note 3b)
P Channel N Channel
30 30 V
DSS
DGR
GSS
DP
P
D(1)
P
D(2)
P
D(1)
P
D(2)
E
AR
stg
−
−30 30 V
±20 ±20 V
−18 24
1.5 1.5
1.1 1.1
0.75 0.75
0.45 0.45
26.3
(Note 4a)
4.5 6 A
−
0.11 mJ
−55~150 °C
= 45 mΩ (typ.)
DS (ON)
= 25 mΩ (typ.)
DS (ON)
| = 6.2 S (typ.)
fs
| = 7.8 S (typ.)
fs
= −10 µA (VDS = −30 V)
= 10 µA (VDS = 30 V)
Rating
46.8
(Note 4b)
Unit
A
W
mJ
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1E
Weight: 0.080 g (typ.)
Circuit Configurati on
8 7 6 5
1 2
N-ch P-ch
3 4
Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2004-07-06
Thermal Characteristics
Characteristics Symbol Max Unit
TPC8403
Thermal resistance, channel to ambient
(t = 10s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10s) (Note 2b)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 2a)
Single-device value at
dual operation
(Note 2b)
R
th (ch-a) (1)
R
th (ch-a) (2)
R
th (ch-a) (1)
R
th (ch-a) (2)
83.3
114
°C/W
167
278
Marking
TPC8403
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4:
a) V
= −24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = −4.5 A
DD
b) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 6.0 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: • on lower left of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
Year of manufacture
(The last digit of a year)
2
2004-07-06
TPC8403
∼
Ω
∼
P-channel
Electrical Characteristics
Gate leakage current I
Drain cut-OFF current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = −10 V, ID = −1 mA
Drain-source ON resistance R
Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.2 A 3.1 6.2 ⎯ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1 Qgs1 ⎯ 4 ⎯
Gate-drain (“miller”) charge Qgd
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Rise time tr
Turn-ON time ton
Fall time tf
Turn-OFF time t
VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA
GSS
VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 µA
DSS
V
(BR) DSSID
V
(BR) DSXID
DS (ON)
iss
rss
oss
off
Q
g
= −10 mA, VGS = 0 V −30 ⎯ ⎯
= −10 mA, VGS = 20 V
VGS = −4.5 V, ID = −2.2 A
V
= −10 V, ID = −2.2 A ⎯ 45 55
GS
⎯ 940 ⎯
= −10 V, VGS = 0 V, f = 1 MHz
V
⎯ 270 ⎯
DS
Ω
4.7
V
DD
GS
ID = −2.2 A
15 V
−
= −10 V,
V
RL =
6.8
OUT
V
GS
−
Duty
V
DD
I
= −4.5 A
D
0 V
10 V
1%, tw = 10 µs
24 V, V
−
15
−
1.0
−
⎯
⎯ 390 ⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯ −
66 90
13 ⎯
21 ⎯
25 ⎯
73 ⎯
18 ⎯
4 ⎯
⎯
2.2 V
Source-Drain Ratings and Characteristics
(Ta = 25°C)
V
mΩ
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) I
Forward voltage (diode) V
⎯ ⎯ ⎯ −18 A
DRP
IDR = −4.5 A, VGS = 0 V ⎯ ⎯ 1.2 V
DSF
3
2004-07-06
N-channel
TPC8403
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-OFF current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3
Drain-source ON resistance R
Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 3.9 7.8 ⎯ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr
Turn-ON time ton ⎯ 18 ⎯
Switching time
Fall time tf ⎯ 6.5 ⎯
Turn-OFF time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1 Qgs1 ⎯ 3 ⎯
Gate-drain (“miller”) charge Qgd
(Ta = 25°C)
VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA
GSS
VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA
DSS
V
(BR) DSSID
V
(BR) DSXID
DS (ON)
iss
rss
oss
off
⎯ 17 ⎯
Q
g
= 10 mA, VGS = 0 V 30 ⎯ ⎯
= 10 mA, VGS = −20 V 15
VGS = 4.5 V, ID = 3 A
V
= 10 V, ID = 3 A ⎯ 25 33
GS
⎯ 850 ⎯
= 10 V, VGS = 0 V, f = 1 MHz
V
⎯ 180 ⎯
DS
V
4.7 Ω
DD
ID = 3.0 A
RL
15 V
V
OUT
=
5.0 Ω
10 V
V
GS
0 V
Duty
1%, tw = 10 µs
24 V, VGS = 10 V,
V
DD
I
= 6 A
D
⎯
⎯ 270 ⎯
⎯
⎯ 27 ⎯
⎯ 4 ⎯
⎯
2.5 V
⎯
38 46
11 ⎯
⎯
Source-Drain Ratings and Characteristics
(Ta = 25°C)
V
mΩ
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) I
Forward voltage (diode) V
⎯ ⎯ ⎯ 24 A
DRP
IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.2 V
DSF
4
2004-07-06
P-channel
−5
−8 V
−4
(A)
D
3
−
−2
Drain current I
−1
0
0 −0.2 −0.4 −0.6 −0.8 −1.0
−18
Common source
VDS = −10 V
Pulse test
−14
(A)
D
−10
−6
Drain current I
−2
0
0 −2 −3 −4 −5 −6
100
50
30
⎪ (S)
fs
10
5
3
1
0.5
0.3
Forward transfer admittance ⎪Y
0.1
0.1
−
I
– VDS
D
−10 V
−6 V
Drain-source voltage VDS (V)
−3.2 V
−4 V
I
– VGS
D
55ºC
−
−1
Gate-source voltage VGS (V)
|Y
| – ID
fs
Ta = −55°C
Ta = 100°C
1
0.3
−
Drain current ID (A)
3
−
−
Common source
Ta = 25°C
Pulse test
−3 V
VGS = −2.2 V
Ta = 100ºC
25ºC
Common source
VDS = −10 V
25°C
10
30
−
−
−2.8 V
−2.6 V
−2.4 V
TPC8403
10
−
−8
(A)
D
−6
−4
Drain current I
−2
0
0
−4 V
1
−
Drain-source voltage VDS (V)
−0.6
−0.5
(V)
DS
−0.4
−0.3
−0.2
0.1
−
Drain-source voltage V
0
0 −2 −4 −6 −8 −10
Gate-source voltage VGS (V)
100
50
30
(mΩ)
100
−
10
DS (ON)
5
R
3
Drain-source ON resistance
1
−0.3 −3 −30
−0.1 −1 −100
I
– VDS
D
2
−
V
– VGS
DS
DS (ON)
VGS = −4.5 V
VGS = −10 V
−3.4 V
3
−
Common source
Ta = 25°C
Pulse test
– ID
−3.6 V
−10 V
−8 V
6 V
−
R
Drain current ID (A)
Common source
Ta = 25 °C
Pulse test
−3.2 V
VGS = −2.2 V
−
ID = −4.5 A
Common source
Ta = 25°C
Pulse test
−10
−3 V
4
−2.2 A
−1.3A
−2.8 V
−2.6 V
−2.4 V
−
−12
5
5
2004-07-06
P-channel
120
100
80
(mΩ)
60
DS (ON)
40
R
Drain-source ON resistance
20
0
−80
10000
1000
100
Capacitance C (pF)
10
1
−0.1 −1 −10 −100
2
1.6
(1)
(W)
D
1.2
(2)
(3)
0.8
(4)
0.4
Drain power dissipation P
0
R
VGS = −4.5 V
0 −40 40 80 120 160
Ambient temperature Ta (°C)
DS (ON)
VGS = −10 V
– Ta
ID = −4.5 A
−1.3 A
ID = −4.5 A
−1.3 A
Common source
Pulse test
Capacitance – V
−0.3 −3 −30
Drain-source voltage VDS (V)
DS
C
iss
C
oss
C
rss
Common source
Ta = 25°C
f = 1MHz
VGS = 0 V
P
– Ta
D
Device mounted on a glass-epoxy board (
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation (Note 3b)
Device mounted on a glass-epoxy board
(b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
40 80 200160 120
Ambient temperature Ta (°C)
TPC8403
−10
2.2 A
−
−2.2 A
(A)
−5
DR
−3
−1
−0.5
−0.3
Drain reverse current I
−0.1
0 0.2 0.4 0.6 0.8 1.2
Drain-source voltage VDS (V)
3
−
(V)
th
2
−
1
−
Gate threshold voltage V
0
80 0 160 80
40 40 120
−
−
Dynamic input/output characteristics
a)
−40
Common source
ID = −4.5 A
Ta = 25°C
Pulse test
(V)
−30
DS
Drain-source voltage V
VDD = −24 V
−20
−10
00
0 8 16 24 32
I
– VDS
DR
−10
−3
−5
−1
VGS = 0 V
Common source
Ta = 25 °C
Pulse test
V
– Ta
th
Common source
VDS = −10 V
ID = −1 mA
Pulse test
Ambient temperature Ta (°C)
V
GS
Total gate charge Qg (nC)
1.0
16
12
(V)
GS
8
4
Gate-source voltage V
0
6
2004-07-06
P-channel
100
10
(A)
D
1
Drain current I
0.1
* Single pulse Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.01
0.01 0.1 1 10 100
1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
500
(2) Single-device value at dual operation (Note 3b)
300
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
100
50
30
10
(°C/W)
5
th
r
3
1
0.5
Normalized transient thermal impedance
0.3
0.1
0.001 0.01 0.1 1 10 100 1000
Safe operating area
Single-device value at dual
ID max (pulse) *
Drain-source voltage VDS (V)
operation (Note 3b)
10 ms *
V
DSS
max
1 ms *
r
− tw
th
Pulse width tw (S)
TPC8403
(4)
(3)
(2)
(1)
Single pulse
7
2004-07-06
N-channel
10
(A)
D
Drain current I
(A)
D
Drain current I
⎪ (S)
fs
Forward transfer admittance ⎪Y
8 V
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0
20
16
12
8
4
0
0 2 3 4 5 6
100
50
30
10
5
3
1
0.5
0.3
0.1
0.1
I
– VDS
D
10 V
6 V
4 V
3.6 V
3.4 V
3.3 V
3.2 V
3.1 V
3 V
2.9 V
2.8 V
Common source
Ta = 25°C
Pulse test
Drain-source voltage VDS (V)
VGS = 2.6 V
I
– VGS
D
Ta = −55ºC
1
Gate-source voltage VGS (V)
25ºC
100ºC
Common source
VDS = 10 V
Pulse test
|Y
| – ID
fs
Common source
VDS = 10 V
Pulse test
Ta = −55°C
Ta = 25°C
Ta = 100°C
1 10 100
0.3 3 30
Drain current ID (A)
TPC8403
20
10 V
6 V
16
(A)
D
12
8
Drain current I
4
0
0123 4 5
Drain-source voltage VDS (V)
0.6
0.5
(V)
DS
0.4
0.3
0.2
0.1
Drain-source voltage V
0
0 2468 10
Gate-source voltage VGS (V)
100
50
30
(mΩ)
10
DS (ON)
5
R
3
Drain-source ON resistance
1
0.1 1 100
0.3 3 30
I
– VDS
D
4 V
8 V
V
– VGS
DS
R
DS (ON)
VGS = 4.5 V
VGS = 10 V
Drain current ID (A)
Common source
3.8 V
Ta = 25°C
Pulse test
3.6 V
Common source
Ta = 25°C
Pulse test
– ID
Common source
Ta = 25°C
Pulse test
10
3.4 V
3.2 V
3 V
2.8 V
VGS = 2.6 V
ID = 6 A
1.5 A
3 A
12
8
2004-07-06
N-channel
60
50
40
(mΩ)
30
DS (ON)
20
R
Drain-source ON resistance
10
0
−80
10000
1000
100
Capacitance C (pF)
10
1
0.1 1 10 100
2
1.6
(1)
(W)
D
1.2
(2)
(3)
0.8
(4)
0.4
Drain power dissipation P
0
0
R
VGS = 4.5 V
VGS = 10 V
0
−40
Ambient temperature Ta (°C)
– Ta
DS (ON)
6 A
ID = 1.5 A
ID = 1.5 A
Common source
Pulse test
40 80 120 160
3 A
6 A
3 A
Capacitance – V
0.3 3 30
Drain-source voltage VDS (V)
DS
C
iss
C
oss
C
rss
Common source
Ta = 25°C
f = 1MHz
VGS = 0 V
P
– Ta
D
Device mounted on a glass-epoxy board (
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation (Note 3b)
Device mounted on a glass-epoxy board
(b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
40 80 200160 120
Ambient temperature Ta (°C)
a)
TPC8403
30
10
(A)
5
DR
3
1
0.5
0.3
Drain reverse current I
0.1
0 −0.2 −0.4 −0.6 −0.8 −1.2
Drain-source voltage VDS (V)
3
(V)
th
2
1
Gate threshold voltage V
0
−80 0 160 80
−40 40 120
Dynamic input/output characteristics
40
Common source
ID = 6 A
Ta = 25°C
Pulse test
(V)
30
DS
VDD = 24 V
20
10
Drain-source voltage V
0
0
I
– VDS
DR
10
5
3
1
VGS = 0 V
Common source
Ta = 25°C
Pulse test
−1.0
V
– Ta
th
Common source
VDS = 10 V
ID = 1 mA
Pulse test
Ambient temperature Ta (°C)
V
GS
8 16 24 32
Total gate charge Qg (nC)
16
12
8
4
0
(V)
GS
Gate-source voltage V
9
2004-07-06
N-channel
100
10
(A)
D
1
Drain current I
0.1
* Single pulse Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.01
0.01 0.1 1 10 100
1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
500
(2) Single-device value at dual operation (Note 3b)
300
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
100
50
30
10
(°C/W)
th
r
5
3
1
0.5
Normalized transient thermal impedance
0.3
0.1
0.001 0.01 0.1 1 10 100 1000
Safe operating area
Single-device value at dual
ID max (pulse) *
Drain-source voltage VDS (V)
operation (Note 3b)
10 ms *
V
DSS
max
1 ms *
r
− tw
th
Pulse width tw (S)
TPC8403
(4)
(3)
(2)
(1)
Single pulse
10
2004-07-06
TPC8403
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
11
2004-07-06
Loading...