TOSHIBA TPC8402 Technical data
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TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (π−MOSVI/U−MOSII)
TPC8402
TPC8402
Lithium Ion Secondary Battery Applications
Notebook PCs
Portable Equipment Applications
Low drain−source ON resistance
: P Channel R
N Channel R
DS (ON)
DS (ON)
High forward transfer admittance
: P Channel |Yfs| = 7 S (typ.)
N Channel |Y
Low leakage current
: P Channel I
N Channel I
DSS
DSS
Enhancement−mode
: P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA)
N Channel V
th
Maximum Ratings
Characteristics Symbol
Drain-source voltage V
Drain-gate voltage (R
Gate-source voltage V
Drain current
Drain power
dissipation
(t = 10s)
(Note 2a)
Drain power
dissipation
(t = 10s)
(Note 2b)
Single pulse avalanche energy EAS
Avalanche current IAR −4.5 5 A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
Channel temperature Tch 150 °C
Storage temperature range T
DC (Note 1) ID −4.5 5
Pulse (Note 1) I
Single-device operation
(Note 3a)
Single-device value at
dual operation
Single-device operation
(Note 3a)
Single-device value at
dual operation
= 27 mΩ (typ.)
= 37 mΩ (typ.)
| = 6 S (typ.)
fs
= −10 µA (VDS = −30 V)
= 10 µA (VDS = 30 V)
= 0.8~2.0 V (VDS = 10 V, ID = 1mA)
(Ta = 25°C)
Rating
P Channel N Channel
−30 30 V
DSS
= 20 kΩ) V
GS
(Note 3b)
(Note 3b)
−30 30 V
DGR
±20 ±20 V
GSS
−18 20
DP
P
1.5 1.5
D (1)
P
1.0 1.0
D (2)
P
0.75 0.75
D (1)
P
0.45 0.45
D (2)
26.3
(Note 4a)
E
0.10 mJ
AR
−55~150 °C
stg
32.5
(Note 4b)
Unit
A
W
mJ
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4a), (Note 4b) and (Note 5), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-05-07
Thermal Characteristics
Characteristics Symbol Max Unit
TPC8402
Single-device operation
Thermal resistance, channel to ambient
(t = 10s) (Note 2a) Single-device value at
dual operation
Single-device operation
Thermal resistance, channel to ambient
(t = 10s) (Note 2b) Single-device value at
dual operation
(Note 3a)
(Note 3b)
(Note 3a)
(Note 3b)
R
th (ch-a) (1)
R
th (ch-a) (2)
R
th (ch-a) (1)
R
th (ch-a) (2)
83.3
125
°C/W
167
278
Marking
Type TPC8402
*
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.)
Note 4:
a) V
= −24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = −4.5 A
DD
b) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 5.0 A
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: • on lower left of the marking indicates Pin 1.
* shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
2
2002-05-07
P-0ch
TPC8402
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut−OFF current I
V
Drain−source breakdown voltage
(BR) DSS
V
(BR) DSX
Gate threshold voltage V
R
Drain−source ON resistance
DS (ON)
R
DS (ON)
GSS
DSS
th
VGS = ±16 V, VDS = 0 V — — ±10 µA
VDS = −30 V, VGS = 0 V — — −10 µA
ID = −10 mA, VGS = 0 V −30 — —
ID = −10 mA, VGS = 20 V −15 — —
VDS = −10 V, ID = −1 mA −0.8 — −2.0 V
VGS = −4 V, ID = −2.2 A — 55 65
VGS = −10 V, ID = −2.2 A — 27 35
Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.2 A 3.5 7 — S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
— 970 —
iss
VDS = −10 V, VGS = 0 V, f = 1 MHz
— 180 —
rss
oss
— 370 —
Rise time tr — 17 —
Turn−ON time ton — 20 —
Switching time
Fall time tf — 75 —
V
mΩ
pF
ns
Turn−OFF time t
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge 1 Q
off
Q
— 28 —
g
≈ −24 V, VGS = −10 V, ID = −4.5 A
V
DD
— 6 —
gs1
Gate−drain (“miller”) charge Qgd
Source−Drain Ratings and Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse
current
Forward voltage (diode) V
Pulse (Note 1) I
DRP
DSF
IDR = −4.5 A, VGS = 0 V — — 1.2 V
— 160 —
nC
— 12 —
(Ta = 25°C)
— — — −18 A
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2002-05-07
N-ch
TPC8402
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut−OFF current I
Drain−source breakdown
voltage
V
(BR) DSS
Gate threshold voltage V
R
Drain−source ON resistance
DS (ON)
R
DS (ON)
GSS
DSS
th
VGS = ±16 V, VDS = 0 V — — ±10 µA
VDS = 30 V, VGS = 0 V ― ― 10 µA
ID = 10 mA, VGS = 0 V 30 ― ― V
VDS = 10 V, ID = 1 mA 0.8 ― 2.0 V
VGS = 4 V, I
VGS = 10 V, I
= 2.5 A ― 58 80 mΩ
D
= 2.5 A ― 37 50 mΩ
D
Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 3 6 ― S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
― 475 ―
iss
= 10 V, VGS = 0 V, f = 1 MHz
V
― 85 ―
rss
oss
DS
― 270 ―
Rise time tr ― 10 ―
Turn−ON time ton ― 16 ―
Switching time
Fall time tf ― 13 ―
pF
ns
Turn−OFF time t
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge 1 Q
off
Q
― 16 ―
g
≈ 24 V, VGS = 10 V, ID = 5 A
V
DD
― 11 ―
gs1
Gate−drain (“miller”) charge Qgd
Source−Drain Ratings and Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse
current
Forward voltage (diode) V
Pulse (Note 1) I
DRP
DSF
IDR = 6 A, VGS = 0 V — — −1.2 V
― 70 ―
nC
― 5 ―
(Ta = 25°C)
— — — 20 A
4
2002-05-07
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