TOSHIBA TPC8211 Technical data
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III)
TPC8211
TPC8211
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
l Low drain−source ON resistance: R
DS (ON)
l High forward transfer admittance: |Y
l Low leakage current: I
= 10 µA (max) (VDS = 30 V)
DSS
l Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage V
Drain current
Drain power
dissipation
(t = 10 s)
(Note 2a)
Drain power
dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 4)
Avalanche current I
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature Tch 150 °C
Storage temperature range T
(Ta = 25°C)
D C (Note 1) I
Pulse (Note 1) I
Single-device
operation
(Note 3a)
Single-device value
at dual operation
Single-device
operation
(Note 3a)
Single-device value
at dual operation
(Note 3b)
(Note 3b)
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please
refer to the next page.
= 25 mΩ (typ.)
| = 7.0 S (typ.)
fs
DSS
DGR
GSS
D
DP
1.5
P
D (1)
1.1
P
D(2)
0.75
P
D (1)
0.45
P
D (2)
E
AS
AR
E
AR
stg
30 V
30 V
±20 V
5.5
22
39.3 mJ
5.5 A
0.1 mJ
−55 to 150 °C
A
W
W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1E
Weight: 0.08 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-02-18
Thermal Characteristics
Characteristics Symbol Max Unit
TPC8211
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (1)
R
th (ch-a) (2)
R
th (ch-a) (1)
R
th (ch-a) (2)
83.3
114
167
278
Marking (Note 6)
Type TPC8211
※
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
Lot No.
°C/W
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
(a)
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
(b)
a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: V
= 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 5.5 A
DD
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: · on lower left of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
2
2003-02-18
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