查询TPC8206供应商
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC8206
TPC8206
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
· Small footprint due to small and thin package
· Low drain-source ON resistance: R
DS (ON)
· High forward transfer admittance: |Yfs| = 7.0 S (typ.)
· Low leakage current: I
· Enhancement-mode: V
= 10 µA (max) (VDS = 60 V)
DSS
= 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
th
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kW) V
Gate-source voltage V
Drain current
dissipation
(t = 10 s)
(Note 2a)
dissipation
(t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 4)
Avalanche current IAR 5 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature Tch 150 °C
Storage temperature range T
(Ta ==== 25°C)
DC (Note 1) ID 5
Pulse (Note 1) I
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
Single-device
operation (Note 3a)
Single-device value
at dual operation
(Note 3b)
= 40 mΩ (typ.)
60 V
DSS
60 V
DGR
±20 V
GSS
20
DP
P
1.5 Drain power
D (1)
1.0
P
D (2)
P
0.75 Drain power
D (1)
P
0.45
D (2)
E
92 mJ
AS
0.1 mJ
E
AR
-55 to 150 °C
stg
A
W
W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
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2003-02-18
Thermal Characteristics
Characteristics Symbol Max Unit
TPC8206
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 3a)
Single-device value at
dual operation
(Note 3b)
R
th (ch-a) (1)
R
th (ch-a) (2)
R
th (ch-a) (1)
R
th (ch-a) (2)
83.3
°C/W
125
167
°C/W
278
Marking
(Note 6)
※
Type TPC8206
Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
(a)
(b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: V
= 25 V, Tch = 25°C (initial), L = 5.0 mH, RG = 25 W, IAR = 5 A
DD
Note 5: Repetitive rating; pulse width limited by maximum channel temperature
Note 6: · on lower left of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
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2003-02-18
TPC8206
<
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-OFF current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ¾ 2.5 V
Drain-source ON resistance R
Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 3.5 7.0 ¾ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr ¾ 2.6 ¾
Turn-ON time ton ¾ 10 ¾
Switching time
Fall time tf ¾ 2.3 ¾
Turn-OFF time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge Qgs ¾ 12 ¾
Gate-drain (“miller”) charge Qgd
(Ta ==== 25°C)
VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA
GSS
VDS = 60 V, VGS = 0 V ¾ ¾ 10 mA
DSS
V
(BR) DSSID
V
(BR) DSXID
DS (ON)
¾ 800 ¾
iss
¾ 60 ¾
rss
oss
off
Q
¾ 17 ¾
g
= 10 mA, VGS = 0 V 60 ¾ ¾
= 10 mA, VGS = -12 V 35 ¾ ¾
VGS = 4 V, ID = 2.5 A ¾ 55 75
= 10 V, ID = 2.5 A ¾ 40 50
V
GS
VDS = 10 V, VGS = 0 V, f = 1 MHz
¾ 190 ¾
V
Duty
V
DD
GS
~
-
10 V
0 V
1%, tw = 10 ms
48 V, V
ID = 2.5 A
4.7 W
V
DD
= 10 V, ID = 5 A
GS
= 12 W
L
R
~
-
V
30 V
OUT
¾ 22 ¾
¾ 5 ¾
Source-Drain Ratings and Characteristics
(Ta ==== 25°C)
V
mW
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) I
Forward voltage (diode) V
¾ ¾ ¾ 20 A
DRP
IDR = 5 A, VGS = 0 V ¾ ¾ -1.2 V
DSF
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TPC8206
10
Common source
Ta = 25°C
Pulse test
8
(A)
D
6
10
8
4
Drain current I
2
0
0 0.2 0.4 0.6
Drain-source voltage VDS (V)
– VDS
I
D
5 4
6
3.75
3.5
VGS = 2.5 V
0.8 1
3.25
3.0
2.75
– VDS
I
20
10
8
16
(A)
D
12
8
Drain current I
4
0
0123 4 5
Drain-source voltage VDS (V)
D
5
4
6
3.75
Common source
Ta = 25°C
Pulse test
3.5
3.25
3.0
2.75
VGS = 2.5 V
20
Common source
VDS = 10 V
Pulse test
16
– VGS
I
D
0.6
0.5
V
– VGS
DS
Common source
Ta = 25°C
Pulse test
(V)
DS
(A)
D
12
8
0.4
0.3
0.2
ID = 5 A
Drain current I
4
0
0 1 2 3 4 5
100
25
Ta = -55°C
Gate-source voltage VGS (V)
| – ID
|Y
50
30
ï (S)
fs
fs
0.1
Drain-source voltage V
0
0 2 4 6 8 10
Gate-source voltage VGS (V)
DS (ON)
– ID
R
500
300
2.5
1.3
12
10
5
3
1
Forward transfer admittance ïY
0.5
0.3
0.1 0.3 1 3 10 30
Ta = -55°C
100
25
Common source
VDS = 10 V
Pulse test
Drain current ID (A) Drain current ID (A)
100
(mW)
50
DS (ON)
30
R
Drain-source ON resistance
10
5
3
0.1 0.3 1 3 10 30
4
VGS = 4 V
10
Common source
Ta = 25°C
Pulse test
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TPC8206
120
Drain-source ON resistance
Common source
Pulse test
100
80
(mW)
60
VGS = 4 V
DS (ON)
40
R
20
10
0
-80 -40 0 40 80 120
Ambient temperature Ta (°C)
R
DS (ON)
– Ta
1.3
ID = 5 A
2.5
1.3
ID = 5 A
2.5
160
I
– VDS
100
(A)
DR
10
1
Drain reverse current I
0.1
-0.40 -0.8 -1.2 -1.6
Drain-source voltage VDS (V)
DR
10
3
5
VGS = 0, -1 V
1
Common source
Ta = 25°C
Pulse test
Capacitance – V
5000
3000
1000
500
300
100
50
Common source
Capacitance C (pF)
VGS = 0 V
30
Tc = 25°C
f = 1 MHz
10
0.1 1 10 100
Drain-source voltage VDS (V)
– Ta
P
2.0
1.6
(1)
(W)
D
1.2
0.8
(2)
(3)
D
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation
(Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
DS
5
4
C
iss
C
oss
C
rss
(V)
th
3
2
1
Gate threshold voltage V
0
-80 -40 0 40 120 160 80
Ambient temperature Ta (°C)
V
– Ta
th
Common source
VDS = 10 V
ID = 1 mA
Pulse test
Dynamic input/output characteristics
50
VDD = 48 V
40
(V)
DS
V
30
20
DS
24
12
Common source
ID = 5 A
Ta = 25°C
Pulse test
VDD = 48 V
VGS
25
20
15
10
(V)
GS
(4)
0.4
Drain power dissipation P
0
0 50 100 150 200
Ambient temperature Ta (°C)
12
10
Drain-source voltage V
0
0 5 10
24
15 25 30 20
5
Gate-source voltage V
0
Total gate charge Qg (nC)
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TPC8206
1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
t = 10 s
100
10
(°C/W)
th
r
1
Normalized transient thermal impedance
100
30
ID max (pulse) *
0.1
0.001 0.01 0.1 1 10 100 1000
Pulse width tw (S)
Safe operating area
Single-device value at dual
operation (Note 3b)
r
th
- tw
(4)
(3)
(2)
(1)
Single pulse
10
(A)
D
3
1
Drain current I
* Single pulse
Ta = 25°C
0.3
Curves must be derated
linearly with increase in
temperature.
0.1
0.1
0.3 1 3 10 30 100
Drain-source voltage VDS (V)
10 ms *
1 ms *
V
DSS
max
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2003-02-18
TPC8206
A
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
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2003-02-18
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