TOSHIBA TPC8201 Technical data

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)

TPC8201

TPC8201

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

l Low drain−source ON resistance : R

DS (ON)

l High forward transfer admittance : |Y
l Low leakage current : I

= 10 µA (max) (VDS = 30 V)

DSS

l Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20kΩ) V

Gate-source voltage V

Drain curren

Drain power
dissipation
(t = 10s)
(Note 2a)

Drain power
dissipation
(t = 10s)
(Note 2b)

Single pulse avalanche energy
(Note 4)

Avalanche current I

Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)

Channel temperature Tch 150 °C

Storage temperature range T

(Ta = 25°C)

DSS

DGR

GSS

D C (Note 1) I

Pulse (Note 1) I

Single-device
operation
(Note 3a)

Single-device value
at dual operation

Single-device
operation
(Note 3a)

Single-device value
at dual operation

(Note 3b)

(Note 3b)

P

P

P

P

DP

D (1)

D(2)

D (1)

D (2)

E

AR

E

AR

stg

= 37 mΩ (typ.)

| = 6 S (typ.)

fs

D

1.5

1.1

0.75

0.45

AS

30 V

30 V

±20 V

5

20

32.5 mJ

5 A

0.1 mJ

−55~150 °C

A

W

W

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-6J1E

Weight: 0.08 g (typ.)

Circuit Configuration

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

1

2003-02-20

Thermal Characteristics

Characteristics Symbol Max Unit

TPC8201

Thermal resistance, channel to ambient
(t = 10s) (Note 2a)

Thermal resistance, channel to ambient
(t = 10s) (Note 2b)

Single-device operation

(Note 3a)

Single-device value at
dual operation

(Note 3b)

Single-device operation

(Note 3a)

Single-device value at
dual operation

(Note 3b)

R

th (ch-a) (1)

R

th (ch-a) (2)

R

th (ch-a) (1)

R

th (ch-a) (2)

83.3

114

°C/W

167

278

Marking

(Note 6)

TPC8201

※

Type

Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2:

a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8
(Unit: mm)

(a)

(b)

Note 3:

a) The power dissipation and thermal resistance values are shown for a single device

(During single-device operation, power is only applied to one device.).

b) The power dissipation and thermal resistance values are shown for a single device

(During dual operation, power is evenly applied to both devices.).

Note 4: V

= 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 6 A

DD

Note 5: Repetitive rating; pulse width limited by maximum channel temperature.

Note 6: ● on lower right of the marking indicates Pin 1.

※ Weekly code:(Three digits)

Week of manufacture
(01 for first week of year, continues up to 52 or 53)

FR-4

25.4 × 25.4 × 0.8
(Unit: mm)

Year of manufacture
(One low-order digits of calendar year)

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2003-02-20

TPC8201

Electrical Characteristics

(Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut−off current I

Drain−source breakdown voltage V

(BR) DSS

Gate threshold voltage V

R

Drain−source ON resistance

DS (ON)

R

DS (ON)

GSS

DSS

th

VGS = ±16 V, VDS = 0 V — — ±10 µA

VDS = 30 V, VGS = 0 V — — 10 µA

ID = 10 mA, VGS = 0 V 30 — — V

VDS = 10 V, ID = 1 mA 0.8 — 2.0 V

VGS = 4 V, ID = 2.5 A — 58 80 mΩ

VGS = 10 V, ID = 2.5 A — 37 50 mΩ

Forward transfer admittance |Yfs| VDS = 10 V, ID = 2.5 A 3 6 — S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

— 475 —

iss

VDS = 10 V, VGS = 0 V, f = 1 MHz

— 85 —

rss

oss

— 270 —

Rise time tr — 10 —

Turn−on time ton — 16 —

Switching time

Fall time tf — 13 —

pF

ns

Turn−off time t

Total gate charge (Gate−source
plus gate−drain)

Gate−source charge Qgs — 11 —

Gate−drain (“miller”) charge Qgd

— 70 —

off

Q

— 16 —

g

V

≈ 24 V, VGS = 10 V, ID = 5 A

DD

nC

— 5 —

Source−Drain Ratings and Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse
current

Forward voltage (diode) V

Pulse (Note 1) I

DRP

DSF

IDR = 5 A, VGS = 0 V — — −1.2 V

(Ta = 25°C)

— — — 20 A

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