Toshiba TPC8118 Schematic [ru]

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)

TPC8118

TPC8118

Notebook PC Applications

• Small footprint due to small and thin package

• Low drain-source ON-resistance: R

DS (ON)

• High forward transfer admittance: |Y

• Low leakage current: I

• Enhancement mode: V

= −10 μA (max) (VDS = −30 V)

DSS

= −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

th

Absolute Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20 kΩ) V

Gate-source voltage V

Drain current

Drain power dissipation (t = 10 s)
(Note 2a)

Drain power dissipation (t = 10 s)
(Note 2b)

Single pulse avalanche energy
(Note 3)

Avalanche current IAR −13 A

Repetitive avalanche energy
(Note 2a) (Note 4)

Channel temperature Tch 150 °C

Storage temperature range T

DC (Note 1) ID −13

Pulse (Note 1) I

(Ta = 25°C)

Note 1, Note 2, Note 3 and Note 4: See the next page.

= 5.5 mΩ (typ.)

| = 36 S (typ.)

fs

−30 V

DSS

−30 V

DGR

±20 V

GSS

−52

DP

1.9 W

P

D

P

1.0 W

D

E

110 mJ

AS

E

0.030 mJ

AR

−55 to 150 °C

stg

A

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-6J1B

Weight: 0.080 g (typ.)

Circuit Configuration

8 6

7 5

Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

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Thermal Characteristics

Characteristics Symbol Max Unit

TPC8118

Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)

Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)

R

R

65.8 °C/W

th (ch-a)

125 °C/W

th (ch-a)

Marking

(Note 5)

TPC8118

Part No. (or abbreviation code)
Lot No.

(weekly code)

Note 6

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(b)

Note 3: V

(a)

= −24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = −13 A

DD

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

Note 5: • on the lower left of the marking indicates Pin 1.

* Weekly code: (Three digits)

Week of manufacture
(01 for first week of year, continuing up to 52 or 53)

Year of manufacture
(The last digit of the calendar year)

Note 6: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

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TPC8118

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut-OFF current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V

Drain-source ON-resistance R

Forward transfer admittance |Yfs| VDS = −10 V, ID = −6.5 A 18 36 ⎯ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ⎯ 9 ⎯

Turn-on time ton ⎯ 18 ⎯

Switching time

Fall time tf ⎯ 180 ⎯

Turn-off time t

Total gate charge
(gate-source plus gate-drain)

Gate-source charge 1 Q

Gate-drain (“miller”) charge Qgd

(Ta = 25°C)

VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA

GSS

VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA

DSS

V

(BR) DSSID

V

(BR) DSXID

DS (ON)

⎯ 2700 ⎯

iss

rss

oss

off

⎯ 65 ⎯

Q

g

gs1

= −10 mA, VGS = 0 V −30 ⎯ ⎯

= −10 mA, VGS = 20 V −13 ⎯ ⎯

VGS = −4 V, ID = −6.5 A ⎯ 10 15

= −10 V, ID = −6.5 A ⎯ 5.5 7.0

V

GS

V

⎯ 600 ⎯

⎯ 10 ⎯

= −10 V, VGS = 0 V, f = 1 MHz

DS

0 V

V

GS

−10 V

Duty ≤ 1%, t

V

DD

= −13 A

I

D

w

≈ −24 V, VGS = −10 V,

ID = −6.5 A

4.7 Ω

VDD ≈ −15 V

= 10 μs

⎯ 860 ⎯

V

OUT

= 2.3 Ω

L

R

⎯ 460 ⎯

⎯ 20 ⎯

Source-Drain Ratings and Characteristics

(Ta = 25°C)

V

mΩ

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse
current

Forward voltage (diode) V

Pulse (Note 1) I

⎯ ⎯ ⎯ −52 A

DRP

IDR = −13 A, VGS = 0 V ⎯ ⎯ 1.2 V

DSF

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