Toshiba TPC8118 Schematic [ru]

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)

TPC8118

TPC8118

Notebook PC Applications

• Small footprint due to small and thin package

• Low drain-source ON-resistance: R

DS (ON)

• High forward transfer admittance: |Y

• Low leakage current: I

• Enhancement mode: V

= −10 μA (max) (VDS = −30 V)

DSS

= −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

th

Absolute Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20 kΩ) V

Gate-source voltage V

Drain current

Drain power dissipation (t = 10 s)
(Note 2a)

Drain power dissipation (t = 10 s)
(Note 2b)

Single pulse avalanche energy
(Note 3)

Avalanche current IAR −13 A

Repetitive avalanche energy
(Note 2a) (Note 4)

Channel temperature Tch 150 °C

Storage temperature range T

DC (Note 1) ID −13

Pulse (Note 1) I

(Ta = 25°C)

Note 1, Note 2, Note 3 and Note 4: See the next page.

= 5.5 mΩ (typ.)

| = 36 S (typ.)

fs

−30 V

DSS

−30 V

DGR

±20 V

GSS

−52

DP

1.9 W

P

D

P

1.0 W

D

E

110 mJ

AS

E

0.030 mJ

AR

−55 to 150 °C

stg

A

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-6J1B

Weight: 0.080 g (typ.)

Circuit Configuration

8 6

7 5

Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

1

1 2 3

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Thermal Characteristics

Characteristics Symbol Max Unit

TPC8118

Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)

Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)

R

R

65.8 °C/W

th (ch-a)

125 °C/W

th (ch-a)

Marking

(Note 5)

TPC8118

Part No. (or abbreviation code)
Lot No.

(weekly code)

Note 6

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(b)

Note 3: V

(a)

= −24 V, Tch = 25°C (initial), L = 500 μH, RG = 25 Ω, IAR = −13 A

DD

Note 4: Repetitive rating: pulse width limited by maximum channel temperature

Note 5: • on the lower left of the marking indicates Pin 1.

* Weekly code: (Three digits)

Week of manufacture
(01 for first week of year, continuing up to 52 or 53)

Year of manufacture
(The last digit of the calendar year)

Note 6: A line under a Lot No. identifies the indication of product Labels.

Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

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TPC8118

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut-OFF current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V

Drain-source ON-resistance R

Forward transfer admittance |Yfs| VDS = −10 V, ID = −6.5 A 18 36 ⎯ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ⎯ 9 ⎯

Turn-on time ton ⎯ 18 ⎯

Switching time

Fall time tf ⎯ 180 ⎯

Turn-off time t

Total gate charge
(gate-source plus gate-drain)

Gate-source charge 1 Q

Gate-drain (“miller”) charge Qgd

(Ta = 25°C)

VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA

GSS

VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA

DSS

V

(BR) DSSID

V

(BR) DSXID

DS (ON)

⎯ 2700 ⎯

iss

rss

oss

off

⎯ 65 ⎯

Q

g

gs1

= −10 mA, VGS = 0 V −30 ⎯ ⎯

= −10 mA, VGS = 20 V −13 ⎯ ⎯

VGS = −4 V, ID = −6.5 A ⎯ 10 15

= −10 V, ID = −6.5 A ⎯ 5.5 7.0

V

GS

V

⎯ 600 ⎯

⎯ 10 ⎯

= −10 V, VGS = 0 V, f = 1 MHz

DS

0 V

V

GS

−10 V

Duty ≤ 1%, t

V

DD

= −13 A

I

D

w

≈ −24 V, VGS = −10 V,

ID = −6.5 A

4.7 Ω

VDD ≈ −15 V

= 10 μs

⎯ 860 ⎯

V

OUT

= 2.3 Ω

L

R

⎯ 460 ⎯

⎯ 20 ⎯

Source-Drain Ratings and Characteristics

(Ta = 25°C)

V

mΩ

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse
current

Forward voltage (diode) V

Pulse (Note 1) I

⎯ ⎯ ⎯ −52 A

DRP

IDR = −13 A, VGS = 0 V ⎯ ⎯ 1.2 V

DSF

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2009-09-29

TPC8118

−

(A)

D

Drain current I

(A)

D

Drain current I

I

– VDS

−20

−10 −3

−8

−16

−12

−8

−4

−0

0 -0.2 -0.4 -0.6

D

−3.3

−3.5

−4

−6

Drain−source voltage VDS (V)

I

– VGS

Ta = 100°C

25°C

D

−55°C

−50

Common source
VDS = −10 V
Pulse test

−40

−30

−20

−10

0

0

−1 −2 −3 −4

Gate−source voltage VGS (V)

Common source
Ta = 25°C
Pulse test

−2.8

−2.6

VGS = −2.4 V

I

– VDS

−3.5

D

−3.3
Common source

Ta = 25°C
Pulse test

−3

−2.8

−2.6

VGS = −2.4 V

−4 −5-0.8 -1

−10

−50

−40

(A)

D

−30

−20

Drain current I

−10

−4

−6

−8

0

0 −1 −2 −3

Drain-source voltage VDS (V)

V

– V

GS

Common source
Ta = 25°C
Pulse test

(V)

−0.5

DS

−0.4

DS

−0.3

−0.2

−3

−0.1

6.5
ID = −13 A

Drain−source voltage V

0

0 −4 −8 −12

−16 −20−5

Gate−source voltage VGS (V)

1000

100

Ta = −55°C

10

| (S)

fs

|Y

1

Forward transfer admittance

0.1

−0.1 −1 −10

|Y

| – ID

fs

25

100

Common source
VDS = −10 V
Pulse test

Drain−source ON resistance

R

1000

100

Common source
Ta = 25°C
Pulse test

DS (ON)

(mΩ)

DS (ON)

10

R

1

−0.1 −1 −10

VGS = −4V

– ID

−10

−100−100

Drain current ID (A) Drain current ID (A)

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2009-09-29

TPC8118

30

Common source
Pulse test

20

(mΩ)

R

DS (ON)

R

10

VGS = −4 V

Drain-source ON-resistance

VGS = −10 V

0

−80 −40 0 40 80 120 160

DS (ON)

– Ta

ID = −13, −6.5, −3 A

ID = −13, −6.5, −3 A

Ambient temperature Ta (°C)

10000

Capacitance – V

1000

DS

100

Capacitance C (pF)

Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C

10

−0.1 −1 −10 −100

Drain−source voltage VDS (V)

I

– VDS

−100

−10

DR

−5

−3

(A)

DR

−10

−1

Drain reverse current I

−0.1
0 0.2 0.4 -0.6 0.8 1.2

−1

VGS = 0 V

Common source
Ta = 25°C
Pulse test

1.0

Drain−source voltage VDS (V)

V

−2.0

C

iss

C

oss

C

rss

−1.6

(V)

th

−1.2

−0.8

Common source

−0.4

VDS = −10 V
ID = −1 mA

Gate threshold voltage V

Pulse test

0

−80 −40 0 40

th

– Ta

80 160120

Ambient temperature Ta (°C)

P

– Ta

2

(1)

1.6

(W)

D

1.2

(2)

0.8

0.4

(1) Device mounted on a glass-epoxy

board(a) (Note 2a)

(2) Device mounted on a glass-epoxy

board (b)(Note 2b)

t = 10 s

Drain power dissipation P

0

0 40 80 160120

D

−30

V

DD

(V)

DS

−20

−12

−10

−6

Drain−source voltage V

0

0 40 60

Ambient temperature Ta (°C)

5

Dynamic input/output

characteristics

= −24V

V

DS

−6

V

GS

20

Total gate charge Qg (nC)

Common source
ID = −13 A
Ta = 25°C
Pulse test

V

= −24V

DD

−12

80 100

2009-09-29

−30

−20

−10

(V)

GS

Gate−source voltage V

0

r

− tw

1000

(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)

100

10

(°C/W)

th

r

1

th

(2)

(1)

Transient thermal impedance

Single pulse

0.1

0.001 0.01 0.1 1 10 100 1000

Pulse width tw (s)

TPC8118

Safe operating area

-100

ID max (Pulse) *

1 ms *

-10

(A)

D

t = 10 ms *

-1

Drain current I

* Single pulse

Ta = 25°C

Curves must be derated
linearly with increase in
temperature.

-0.1

-0.1 -1 -10 -100

V

Drain−source voltage VDS (V)

DSS

max

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2009-09-29

TPC8118

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.

• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.

• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.

• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any

applicable laws or regulations.

• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.

BSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE

• A
FO

R PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.

• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.

• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.

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