查询TPC8110供应商
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC8110
TPC8110
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: R
• High forward transfer admittance: |Yfs| = 16 S (typ.)
• Low leakage current: I
• Enhancement-mode: V
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage V
Drain current
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current IAR −8 A
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature Tch 150 °C
Storage temperature range T
= −10 µA (max) (VDS = −40 V)
DSS
= −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
th
(Ta = 25°C)
DC (Note 1) ID −8
Pulsed(Note 1) IDP −32
DS (ON)
= 17 mΩ (typ.)
−40 V
DSS
−40 V
DGR
±20 V
GSS
1.9 W
P
D
1.0 W
P
D
59.4 mJ
E
AS
0.19 mJ
E
AR
−55 to 150 °C
stg
A
Unit: mm
JEDEC
JEITA
TOSHIBA 2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8 6
7 5
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
1 2 3
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Thermal Characteristics
Characteristics Symbol Max Unit
TPC8110
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
R
th (ch-a)
R
th (ch-a)
65.8 °C/W
125 °C/W
Marking
(Note 5)
TPC8110
※
Type
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
(a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
Note 3: V
= −24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −8 A
DD
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
(b)
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TPC8110
<
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-OFF current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 −2.0 V
Drain-source ON resistance R
Forward transfer admittance |Yfs| VDS = −10 V, ID = −4.0 A 8 16 S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr 6.0
Turn-ON time ton 15
Switching time
Fall time tf 30
Turn-OFF time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1 Q
Gate-drain (“miller”) charge Qgd
(Ta ==== 25°C)
VGS = ±16 V, VDS = 0 V ±10 µA
GSS
VDS = −40 V, VGS = 0 V −10 µA
DSS
V
(BR) DSS
V
(BR) DSX
ID = −10 mA, VGS = 0 V −40
ID = −10 mA, VGS = 20 V −25
VGS = −4 V, ID = −4.0 A 27 35
DS (ON)
2180
iss
275
rss
oss
off
Q
48
g
5.5
gs1
= −10 V, ID = −4.0 A 17 25
V
GS
VDS = −10 V, VGS = 0 V, f = 1 MHz
330
VGS
Duty
V
DD
I
= −8 A
D
0 V
−10 V
1%, t
=
∼
−32 V, V
−
w
4.7 Ω
= 10 µs
= −10 V,
GS
ID = −4 A
= 5 Ω
R
∼
V
−
DD
V
OUT
L
−20 V
115
12
Source-Drain Ratings and Characteristics
(Ta ==== 25°C)
V
mΩ
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) I
Forward voltage (diode) V
−32 A
DRP
IDR = −8 A, VGS = 0 V 1.2 V
DSF
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TPC8110
– VDS
I
−10
−8
−8
−6
(A)
−5
D
−6
−3.0
−4
Drain current I
−2
−3.5
−3.25
−4 −10
−3.75
−2.75
Common source
Ta = 25°C
Pulse test
−2.5
VGS = −2.25 V
D
0 −0.2 0 −0.4 −0.6 −0.8 −1
Drain-source voltage VDS (V)
– VGS
I
−40
Common source
VDS = −10 V
Pulse test
−30
(A)
D
−20
Drain current I
−10
0
0 −1
100
Gate-source voltage VGS (V)
D
25
Ta = −55°C
−2 −3 −4 −5
(A)
D
Drain current I
−0.8
(V)
−0.6
DS
−0.4
−0.2
Drain-source voltage V
−40
−8
−30
−10
−20
−10
0
0 −1
0
0 −2
−6
−5
−3.75
−3.5
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
– VDS
I
D
−3.25
– VGS
−6
Common source
Ta = 25°C
Pulse test
−3.0
−2.75
−2.5
VGS = −2.25 V
Common source
Ta = 25°C
Pulse test
−2.0
−4.0
−4
−2 −3 −4 −5
V
DS
ID = −8.0 A
−4 −8 −10 −12
| – ID
|Y
100
Common source
VDS = −10 V
50
Pulse test
30
| (S)
fs
10
5
3
1
0.5
Forward transfer admittance |Y
0.3
−0.1 −1 −10 −50
fs
Ta = −55°C
Drain current ID (A)
100
DS (ON)
– ID
VGS = −4 V
−10
−30 −3 −5 −0.3 −0.5
2002-05-24
1000
Common source
Ta = 25°C
500
Pulse test
300
25
100
(mΩ)
−30 −3 −5 −0.3 −0.5
50
30
DS (ON)
R
Drain-source ON resistance
10
5
3
−0.1 −1 −10 −50
Drain current ID (A)
4
R
TPC8110
50
Common source
Pulse test
40
30
Drain-source ON resistance
(mΩ)
DS (ON)
R
VGS = −4 V
20
10
0
−80 −40 0 40 120 160 80
−10 V
Case temperature Tc (°C)
Capacitance – V
10000
5000
3000
R
DS (ON)
– Tc
ID = 8.0 A
ID = −2.0/−4.0/−8.0 A
DS
−2.0/−4.0 A
I
– VDS
−100
(A)
DR
−10
−1
−10
Drain reverse current I
−0.1
0
DR
−5
−3
−1 VGS = 0 V, 1 V
Common source
Ta = 25°C
Pulse test
0.4 0.8 1.2 1.6
Drain-source voltage VDS (V)
– Tc
V
−2
−1.6
C
iss
(V)
th
th
Common source
VDS = −10 V
ID = −1 mA
Pulse test
1000
500
300
Capacitance C (pF)
100
Common source
VGS = 0 V
50
f = 1 MHz
Ta = 25°C
30
−0.1 −1 −10
−0.5
Drain-source voltage VDS (V)
2.0
(1)
1.6
(W)
D
1.2
(2)
0.8
0.4
Drain power dissipation P
−3
−5
– Tc
P
D
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
C
C
−30
oss
rss
−1.2
−50 −0.3
−0.8
−0.4
Gate threshold voltage V
0
−80 −40 0 40 120 160 80
Case temperature Tc (°C)
Dynamic Input/Output Characteristics
−40
VDS
(V)
−30
DS
−20
−10
Drain-source voltage V
Common source
ID = −10 A
Ta = 25°C
Pulse test
−8
VDD = 32 V VGS
−16
−40
−30
−20
−10
(V)
GS
Gate-source voltage V
0
0 50
25 75 125
100 150 175
Ambient temperature Tc (°C)
0
0 20 40
80
80
0
Total gate charge Qg (nC)
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TPC8110
− tw
r
1000
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(°C/W)
th
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t = 10 s
100
th
(2)
(1)
10
1
Normalized transient thermal impedance r
0.1
0.001 0.01 0.1 1 10 100 1000
Safe Operating Area
−100
−50
ID max (pulse)*
−30
−10
(A)
D
−5
−3
−1
Drain current I
−0.5
*: Single pulse Ta = 25°C
−0.3
Curves must be derated
linearly with increase in
temperature.
−0.1
−0.1 −1 −10 −100
Drain-source voltage VDS (V)
10 ms*
V
DSS
1 ms*
max
Pulse width tw (s)
Single pulse
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2002-05-24
TPC8110
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
7
2002-05-24
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