查询TPC8107供应商
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPC8107
TPC8107
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
· Small footprint due to small and thin package
· Low drain-source ON resistance: R
DS (ON)
· High forward transfer admittance: |Yfs| = 31 S (typ.)
· Low leakage current: I
· Enhancement-mode: V
= −10 µA (max) (VDS = −30 V)
DSS
= −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
th
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
Avalanche current IAR -13 A
Repetitive avalanche energy
Channel temperature
Storage temperature range
(Ta = 25°C)
DC (Note 1) ID -13
Pulse (Note 1) IDP -52
(Note 3)
(Note 2a) (Note 4)
= 5.5 mΩ (typ.)
V
-30 V
DSS
V
-30 V
DGR
V
±20 V
GSS
A
1.9 W
P
D
1.0 W
P
D
219 mJ
E
AS
0.19 mJ
E
AR
T
150 °C
ch
T
-55 to 150 °C
stg
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8 6
7 5
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
1 2 3
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2003-02-20
Thermal Characteristics
Characteristics Symbol Max Unit
TPC8107
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
R
R
65.8 °C/W
th (ch-a)
125 °C/W
th (ch-a)
Marking
(Note 5)
TPC8107
※
TYPE
Lot No.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
(a)
Note 3: VDD = -24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 W, IAR = -13 A
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: · on lower left of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
(b)
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2003-02-20
TPC8107
<
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-OFF current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = -10 V, ID = -1 mA -0.8 ¾ -2.0 V
Drain-source ON resistance R
Forward transfer admittance |Yfs| VDS = -10 V, ID = -6.5 A 15.5 31 ¾ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr ¾ 11 ¾
Turn-ON time ton ¾ 22 ¾
Switching time
Fall time tf ¾ 110 ¾
Turn-OFF time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1 Q
Gate-drain (“miller”) charge Qgd
(Ta ==== 25°C)
VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA
GSS
VDS = -30 V, VGS = 0 V ¾ ¾ -10 mA
DSS
V
(BR) DSSID
V
(BR) DSXID
DS (ON)
¾ 5880 ¾
iss
¾ 1000 ¾
rss
oss
off
Q
¾ 130 ¾
g
gs1
= -10 mA, VGS = 0 V -30 ¾ ¾
= -10 mA, VGS = 20 V -15 ¾ ¾
VGS = -4 V, ID = -6.5 A ¾ 10 15
= -10 V, ID = -6.5 A ¾ 5.5 7.0
V
GS
VDS = -10 V, VGS = 0 V, f = 1 MHz
4.7 W
GS
ID = -6.5 A
~
V
-
DD
= -10 V,
V
OUT
= 2.3 W
L
R
-15 V
0 V
V
GS
-10 V
1%, tw = 10 ms
Duty
~
V
-24 V, V
-
DD
I
= -13 A
¾ 10 ¾
D
¾ 1050 ¾
¾ 395 ¾
¾ 30 ¾
Source-Drain Ratings and Characteristics
(Ta ==== 25°C)
V
mW
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) I
Forward voltage (diode) V
¾ ¾ ¾ -52 A
DRP
IDR = -13 A, VGS = 0 V ¾ ¾ 1.2 V
DSF
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2003-02-20
TPC8107
-20
-16
(A)
D
-12
-8
Drain current I
-4
-4 -10
-8
-6
0
Drain-source voltage VDS (V)
-2.8
-0.4 -0.6 -0.8 -1.00 -0.2
– VDS
I
D
-2.6
Common source
-3
Ta = 25°C
Pulse test
VGS = -2 V
-2.4
-2.2
(A)
D
Drain current I
-50
-40
-30
-20
-10
0
0 -1
– VDS
I
D
-3
-4
-10
-8
-2.8
-6
-2.6
Common source
Ta = 25°C
Pulse test
-2.4
-2.2
VGS = -2 V
-2 -3 -4 -5
Drain-source voltage VDS (V)
– VGS
I
-50
-40
(A)
D
-30
D
-20
Drain current I
-10
0
0 -1
25
100
Ta = -55°C
-2 -3 -4 -5
Gate-source voltage VGS (V)
| – ID
|Y
fs
100
ï (S)
fs
30
10
3
1
Ta = -55°C
Forward transfer admittance ïY
0.3
-0.1 -0.3 -1 -3 -10 -30 -100
25
100
Drain current ID (A) Drain current ID (A)
Common source
VDS = -10 V
Pulse test
Common source
VDS = -10 V
Pulse test
V
– VGS
-0.5
-0.4
DS
Common source
Ta = 25°C
Pulse test
(V)
DS
-0.3
-0.2
-3
-8 -12 -16 -20
ID = -13 A
-6.5
Drain-source voltage V
-0.1
0
0 -4
Gate-source voltage VGS (V)
DS (ON)
– ID
VGS = -4 V
-10
Common source
Ta = 25°C
Pulse test
R
100
30
(mW)
10
DS (ON)
R
3
Drain-source ON resistance
1
0.3
-0.1 -0.3 -1 -3 -10 -30 -100
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2003-02-20
TPC8107
30
Common source
Pulse test
20
(mW)
DS (ON)
R
Drain-source ON resistance
VGS = -4 V
10
-10
-80 -40 0 40 120 160 80
Ambient temperature Ta (°C)
R
– Ta
DS (ON)
ID = -13 A, -6.5 A, -3 A
ID = -13 A, -6.5 A, -3 A
I
– VDS
-100
-10
(A)
DR
-10
-1
Drain reverse current I
0
-0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
Drain-source voltage VDS (V)
DR
-5
-3
-1
VGS = 0 V
Common source
Ta = 25°C
Pulse test
10000
Capacitance – V
3000
1000
300
Common source
100
VGS = 0 V
Capacitance C (pF)
f = 1 MHz
Ta = 25°C
30
-0.1 -0.3 -1 -3 -10 -30 -100
Drain-source voltage VDS (V)
DS
– Ta
P
2.0
(1)
1.6
(W)
D
1.2
(2)
0.8
0.4
Drain power dissipation P
0
0 40
Ambient temperature Ta (°C)
D
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
80 120 160 200
-2.0
C
iss
-1.6
(V)
th
C
oss
C
rss
-1.2
-0.8
-0.4
Gate threshold voltage V
0
-80 -40 0 40 120 160 80
Ambient temperature Ta (°C)
V
– Ta
th
Common source
VDS = -10 V
ID = -1 mA
Pulse test
Dynamic input/output characteristics
-30
VDD = -24 V
V
(V)
DS
Drain-source voltage V
DS
-20
-12
-10
-6
V
GS
0
0 40 80 120 160
Common source
ID = -13 A
Ta = 25°C
Pulse test
-6
VDD = -24 V
-12
Total gate charge Qg (nC)
200
-30
-20
-10
0
(V)
GS
Gate-source voltage V
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2003-02-20
TPC8107
1000
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(Note 2b)
(2) Device mounted on a glass-epoxy board (b)
t = 10 s
100
10
(°C/W)
th
r
1
Normalized transient thermal impedance
0.1
0.001 0.01 0.1 1 10 100 1000
Pulse width tw (S)
-100
ID max (pulse) *
-10
(A)
D
Safe operating area
1 ms*
10 ms*
r
th
- tw
(2)
(1)
Single pulse
-1
Drain current I
-0.1
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
-0.01
-0.01 -0.1 -1 -10 -100
Drain-source voltage VDS (V)
V
DSS
max
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2003-02-20
TPC8107
A
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
7
2003-02-20
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