查询TPC8106-H供应商
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TPC8106-H
TPC8106−H
High Speed and High Efficiency DC−DC Converters
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
High speed switching
Small gate charge : Qg = 52 nC (typ.)
Low drain−source ON resistance : R
High forward transfer admittance : |Y
Low leakage current : I
Enhancement−mode : V
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current IAR −10 A
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
DC (Note 1) ID −10
Pulse (Note 1) IDP −40
= −10 µA (max) (VDS = −30 V)
DSS
= −0.8~ −2.0 V (VDS =− 10 V, ID = −1 mA)
th
(Ta = 25°C)
V
V
V
E
E
T
T
DS (ON)
DSS
DGR
GSS
P
P
= 14 mΩ (typ.)
| = 16.6 S (typ.)
fs
−30 V
−30 V
±20 V
A
2.4 W
D
1.0 W
D
130 mJ
AS
0.24 mJ
AR
150 °C
ch
−55 to 150 °C
stg
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
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Thermal Characteristics
Characteristics Symbol Max Unit
TPC8106-H
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
R
th (ch-a)
R
th (ch-a)
52.1 °C/W
125 °C/W
Marking
(Note 5)
TPC8106
H
※
Type
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3: V
= −24 V, Tch = 25°C (initial), L = 0.1 mH, RG = 25 Ω, IAR = −10 A
DD
Note 4: Reptitve rating; pulse width limited by maximum channel temperature
Note 5: ● on lower left of the marking indicates Pin 1.
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
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TPC8106-H
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut−off current I
V
Drain−source breakdown voltage
(BR) DSS
V
(BR) DSX
Gate threshold voltage V
R
Drain−source ON resistance
DS (ON)
R
DS (ON)
GSS
DSS
th
VGS = ±16 V, VDS = 0 V — — ±10 µA
VDS = −30 V, VGS = 0 V — — 10 µA
ID = −10 mA, VGS = 0 V −30 — —
ID = −10 mA, VGS = 20 V −15 — —
VDS = −10 V, ID = −1 mA −0.8 — −2.0 V
VGS = −4 V, ID = −5 A — 24 30
VGS = −10 V, ID = −5 A — 14 20
Forward transfer admittance |Yfs| VDS = −10 V, ID = −5 A 8.3 16.6 — S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
— 2160 —
iss
VDS = −10 V, VGS = 0 V, f = 1 MHz
— 530 —
rss
oss
— 720 —
Rise time tr — 12 —
Turn−on time ton — 20 —
Switching time
Fall time tf — 100 —
V
mΩ
pF
ns
Turn−off time t
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge Qgs — 38 —
off
Q
— 52 —
g
V
≈ −24 V, VGS = −10 V, ID = −10 A
DD
Gate−drain (“miller”) charge Qgd
— 250 —
— 14 —
nC
Source−Drain Ratings and Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse
current
Forward voltage (diode) V
Pulse (Note 1) I
DRP
DSF
IDR = −10 A, VGS = 0 V — — 1.2 V
(Ta = 25°C)
— — — −40 A
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TPC8106-H
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TPC8106-H
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TPC8106-H
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TPC8106-H
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
7
2002-02-06
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