TOSHIBA TPC8105-H Technical data

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查询TPC8105-H供应商

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)

TPC8105-H

TPC8105−H

High Speed and High Efficiency DC−DC Converters

Lithium Ion Battery Applications

Notebook PCs

Portable Equipment Applications

 Small footprint due to small and thin package  High speed switching  Small gate charge : Qg = 32 nC (typ.)  Low drain−source ON resistance : R  High forward transfer admittance : |Y  Low leakage current : I  Enhancement−mode : V

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage

Drain-gate voltage (RGS = 20 kΩ)

Gate-source voltage

Drain current

Drain power dissipation (t = 10 s) (Note 2a)

Drain power dissipation (t = 10 s) (Note 2b)

Single pulse avalanche energy (Note 3)

Avalanche current IAR −7 A

Repetitive avalanche energy (Note 2a) (Note 4)

Channel temperature

Storage temperature range

DC (Note 1) ID −7

Pulse (Note 1) IDP −28

= −10 µA (max) (VDS = −30 V)

DSS

= −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)

th

(Ta = 25°C)

DS (ON)

V

= 20 mΩ (typ.)

| = 12 S (typ.)

fs

−30 V

DSS

−30 V

DGR

±20 V

GSS

A

2.4 W

P

D

1.0 W

P

D

63.7 mJ

E

AS

0.24 mJ

E

AR

T

150 °C

ch

T

−55 to 150 °C

stg



Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-6J1B

Weight: 0.080 g (typ.)

Circuit Configuration

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

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Thermal Characteristics

Characteristics Symbol Max Unit

TPC8105-H

Thermal resistance, channel to ambient (t = 10 s) (Note 2a)

Thermal resistance, channel to ambient (t = 10 s) (Note 2b)

R

th (ch-a)

R

th (ch-a)

52.1 °C/W

125 °C/W

Marking

(Note 5)

TPC8105 H

※

Type

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2:

(a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(a)

(b)

Note 3: V

= −24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −7 A

DD

Note 4: Reptitve rating; pulse width limited by maximum channel temperature.

Note 5: ● on lower left of the marking indicates Pin 1. ※ shows Lot number. (year of manufacture: last decimal digit of the year of manufacture, month of

manufacture: january to december are denoted by letters A to L respectively)

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TPC8105-H

Electrical Characteristics

(Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut−off current I

V

Drain−source breakdown voltage

(BR) DSS

V

(BR) DSX

Gate threshold voltage V

R

Drain−source ON resistance

DS (ON)

R

DS (ON)

GSS

DSS

th

VGS = ±16 V, VDS = 0 V — — ±10 µA

VDS = −30 V, VGS = 0 V — — −10 µA

ID = −10 mA, VGS = 0 V −30 — —

ID = −10 mA, VGS = 20 V −15 — —

VDS = −10 V, ID = −1 mA −0.8 — −2.0 V

VGS = −4 V, ID = −3.5 A — 34 60

VGS = −10 V, ID = −3.5 A — 20 40

Forward transfer admittance |Yfs| VDS = −10 V, ID = −3.5 A 5.9 12 — S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

— 1440 —

iss

VDS = −10 V, VGS = 0 V, f = 1 MHz

— 330 —

rss

oss

— 485 —

Rise time tr — 10 —

Turn−on time ton — 18 —

Switching time

Fall time tf — 50 —

V

mΩ

pF

ns

Turn−off time t

Total gate charge (Gate−source plus gate−drain)

Gate−source charge Qgs — 23 —

off

Q

― 32 —

g

V

≈ −24 V, VGS = −10 V, ID = −7 A

DD

Gate−drain (“miller”) charge Qgd

— 140 —

nC

— 8 —

Source−Drain Ratings and Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current

Forward voltage (diode) V

Pulse (Note 1) I

DRP

DSF

IDR = −7 A, VGS = 0 V — — 1.2 V

(Ta = 25°C)

— — — −28 A

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