TOSHIBA TPC8016-H Technical data

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TPC8016-H

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)

TPC8016-H

High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications

• Small footprint due to small and thin package

• High speed switching

• Small gate charge: Qg = 48 nc (typ.)

• Low drain-source ON resistance: R

• High forward transfer admittance: |Yfs| = 25 S (typ.)

• Low leakage current: I

• Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)

= 10 µA (max) (VDS = 30 V)

DSS

DS (ON)

= 3.7 mO (typ.)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

V

Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage

Drain current

Drain power dissipation (t = 10 s)
(Note 2a)

Drain power dissipation (t =
(Note 2b)
Single pulse avalanche energy

Avalanche current IAR 15 A
Repetitive avalanche energy

Channel temperature
Storage temperature range

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

DC (Note 1)
Pulsed (Note 1)

(Note 3)

(Note 2a) (Note 4)

30 V

DSS

V

30 V

DGR

V

±20 V

GSS

ID 15

IDP 60

PD 1.9 W

PD 1.0 W

EAS 146 mJ

EAR 0.19 mJ

Tch 150 °C

T

−55 to 150 °C

stg

A

Unit: mm

JEDEC ?
JEITA ?
TOSHIBA

Weight: 0.080 g (typ.)

2-6J1B

Circuit Configuration

8

7

This transistor is an electrostatic sensitive device. Please handle with caution.

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Thermal Characteristics

TPC8016

TPC8016-H

Characteristics Symbol M ax

Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)

R

th (ch-a)

R

th (ch-a)

65.8 °C /W

125 °C /W

Unit

Marking (Note 5)

Type

H

※

Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

Lot No.

25.4 × 25.4 × 0.8

(unit: mm)

FR-4

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

(a)

Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 15 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: • on lower left of the marking indicates Pin 1.

* Weekly code: (Three digits)

Week of manufacture
(01 for first week of year, continues up to 52 or 53)

Year of manufacture
(One low-order digits of calendar year)

(b)

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Electrical Characteristics (Ta = 25°C)

L

GS

OUT

Characteristics Symbol Test Condition Min Typ. Max Unit

TPC8016-H

Gate leakage current I
Drain cut-OFF current I

Drain-source breakdown voltage

VGS = ±16 V, VDS = 0 V   ±10 µA

GSS

VDS = 30 V, VGS = 0 V   10 µA

DSS

V

(BR) DSS

V

(BR) DSX

ID = 10 mA, VGS = 0 V 30  
ID = 10 mA, VGS = −20 V 15  

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1  2.3 V

Drain-source ON resistance R

DS (ON)

VGS = 4.5 V, ID = 7.5 A  5.5 7.5

VGS = 10 V, ID = 7.5 A  3.7 5.7
Forward transfer admittance |Yfs| VDS = 10 V, ID = 7.5 A 12.5 25  S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C

Rise time tr  9.8 

Turn-ON time ton  21 

 2380 

iss

VDS = 10 V, VGS = 0 V, f = 1 MHz

 410

rss

oss

 980

10 V

V

0 V

ID = 7.5 A

V




Switching time

Fall time tf  15 

4.7 Ω

= 2 Ω
R

VDD15 V

Turn-OFF time t

Total gate charge
(gate-source plus gate-drain)

Gate-source charge 1 Q
Gate-drain (“miller”) charge Qgd  12.2 
Gate switch charge QSW

off

Qg

Duty

1%, tw = 10 µs

VDD24 V, VGS = 10 V, ID = 15 A  46 

 60 

VDD24 V, VGS = 5 V, ID = 15 A  26 

 7.2 

gs1

VDD24 V, VGS = 10 V, ID = 15 A

 15.6 

Source-Drain Ratings and Characteristics (Ta = 25°C)

V

m Ω

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1)
Forward voltage (diode) V

I

   60 A

DRP

IDR = 15 A, VGS = 0 V   −1.2

DSF

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V