10 s)
6
1 2 3
5
4
查询TPC8016-H供应商
TPC8016-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
TPC8016-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg = 48 nc (typ.)
• Low drain-source ON resistance: R
• High forward transfer admittance: |Yfs| = 25 S (typ.)
• Low leakage current: I
• Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
= 10 µA (max) (VDS = 30 V)
DSS
DS (ON)
= 3.7 mO (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
V
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t =
(Note 2b)
Single pulse avalanche energy
Avalanche current IAR 15 A
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
DC (Note 1)
Pulsed (Note 1)
(Note 3)
(Note 2a) (Note 4)
30 V
DSS
V
30 V
DGR
V
±20 V
GSS
ID 15
IDP 60
PD 1.9 W
PD 1.0 W
EAS 146 mJ
EAR 0.19 mJ
Tch 150 °C
T
−55 to 150 °C
stg
A
Unit: mm
JEDEC ?
JEITA ?
TOSHIBA
Weight: 0.080 g (typ.)
2-6J1B
Circuit Configuration
8
7
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-07-14
Thermal Characteristics
TPC8016
TPC8016-H
Characteristics Symbol M ax
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
R
th (ch-a)
R
th (ch-a)
65.8 °C /W
125 °C /W
Unit
Marking (Note 5)
Type
H
※
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Lot No.
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 15 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
(b)
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2003-07-14
Electrical Characteristics (Ta = 25°C)
L
GS
OUT
Characteristics Symbol Test Condition Min Typ. Max Unit
TPC8016-H
Gate leakage current I
Drain cut-OFF current I
Drain-source breakdown voltage
VGS = ±16 V, VDS = 0 V ±10 µA
GSS
VDS = 30 V, VGS = 0 V 10 µA
DSS
V
(BR) DSS
V
(BR) DSX
ID = 10 mA, VGS = 0 V 30
ID = 10 mA, VGS = −20 V 15
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 2.3 V
Drain-source ON resistance R
DS (ON)
VGS = 4.5 V, ID = 7.5 A 5.5 7.5
VGS = 10 V, ID = 7.5 A 3.7 5.7
Forward transfer admittance |Yfs| VDS = 10 V, ID = 7.5 A 12.5 25 S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr 9.8
Turn-ON time ton 21
2380
iss
VDS = 10 V, VGS = 0 V, f = 1 MHz
410
rss
oss
980
10 V
V
0 V
ID = 7.5 A
V
Switching time
Fall time tf 15
4.7 Ω
= 2 Ω
R
VDD15 V
Turn-OFF time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1 Q
Gate-drain (“miller”) charge Qgd 12.2
Gate switch charge QSW
off
Qg
Duty
1%, tw = 10 µs
VDD24 V, VGS = 10 V, ID = 15 A 46
60
VDD24 V, VGS = 5 V, ID = 15 A 26
7.2
gs1
VDD24 V, VGS = 10 V, ID = 15 A
15.6
Source-Drain Ratings and Characteristics (Ta = 25°C)
V
m Ω
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1)
Forward voltage (diode) V
I
60 A
DRP
IDR = 15 A, VGS = 0 V −1.2
DSF
3
2003-07-14
V
TPC8016-H
DS (ON)
fs
DS
D
D
D
0
50
102030
40
30
0.1110
100
25
0246810
10 3.5
08121620
4
10
10
0.2
0.4
11010010
4.5
(A)
Drain current I
0 0.2
Drain-source voltage VDS (V)
ID – VDS
3.2
3.15
0.4
Common source
Ta = 25°C, pulse test
3.1
VGS = 2.7 V
0.6
0.8
3.05
4.5
3.5
(A)
3.0
2.9
2.8
Drain current I
1.0
0 0.4
Drain-source voltage VDS (V)
ID – VDS
3.3
0.8
Common source
Ta = 25°C, pulse test
VGS = 2.8 V
1.2
1.6
3.2
3.1
3.0
2.9
2.0
ID – VGS
Common source
VDS = 10 V
Pulse test
(A)
Drain current I
100
0 1 2 3 6
Gate-source voltage VGS (V)
25
Ta = −55°C
4 5
|Yfs| – ID
(S)
Ta = −55°C
1
0.8
(V)
0.6
ID = 15 A
Drain-source voltage V
0
0 2 6 8 12
3.8
Gate-source voltage VGS (V)
7.5
4
R
– ID
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
VDS – VGS
100
Forward transfer admittance Y
0.1
1 10
Drain current ID (A)
Common source
VDS = 10 V
Pulse test
(mΩ)
DS (ON)
R
Drain-source ON resistance
0.1
4
VGS = 4.5 V
1 10
Drain current ID (A)
100
2003-07-14
DS (ON)
D
th
DS (ON)
DS
DR
00 0.4
0.8
1.2
1.6
250
0.1110
−1
1003 1 5 10
80
01.5
2.5
0.521
oss
20 30
40 50 60
12
12 6
80
0241268
10
10
(mΩ)
R
Drain-source ON resistance
−80 −40
R
VGS = 4.5 V
0 40
Ambient temperature Ta (°C)
– Ta
ID = 15, 7.5, 3.8 A
ID = 15, 7.5, 3.8 A
Common source
Pulse test
120
160
(A)
Drain reverse current I
0 −0.4
IDR – VDS
−0.2
Drain-source voltage VDS (V)
−0.6
TPC8016-H
VGS = 0 V
Common source
Ta = 25°C
Pulse test
−0.8
10000
Capacitance C (pF)
(W)
1000
100
10
0.1
Capacitance – VDS
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
1 10
Drain-source voltage VDS (V)
PD – Ta
(1)
(2)
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
Vth – Ta
C
iss
C
C
rss
100
(V)
Gate threshold voltage V
−80 −40
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0 40
Ambient temperature Ta (°C)
120
160
Dynamic input/output characteristics
16
14
(V)
12
GS
10
8
6
(V)
40
Common source
Ta = 25°C
ID = 15 A
Pulse test
30
VDD = 24 V
20
6
VDD = 24 V
V
V
DS
GS
Drain power dissipation P
Ambient temperature Ta (°C)
100
150
200
Drain-source voltage V
5
10
0
0 10
Total gate charge Qg (nC)
4
Gate-source voltage V
2
0
2003-07-14
TPC8016-H
D
Normalized transient thermal imped
ance
1 10
DSS
1000
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10 s
100
10
(°C/W)
th
r
1
0.1
0.001
0.01
0.1 10 100
100
ID max (plused) *
Safe operating area
1 ms*
rth − tw
1
Pulse width tw (S)
(2)
(1)
Single pulse
1000
(A)
Drain current I
0.1
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.01
10 ms *
V
max
0.1
Drain-source voltage VDS (V)
1 10
100
6
2003-07-14
TPC8016-H
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the mos t recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage ”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
7
2003-07-14
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