TOSHIBA TPC8003 Technical data

查询TPC8003供应商

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)

TPC8003

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

 Small footprint due to small and thin package  Low drain−source ON resistance : R

DS (ON)

 High forward transfer admittance : |Y  Low leakage current : I  Enhancement mode : V

= 10 µA (max) (VDS = 30 V)

DSS

= 0.8~2.5 V (VDS = 10 V, ID = 1 mA)

th

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage

Drain-gate voltage (RGS = 20 kΩ)

Gate-source voltage

Drain current

Drain power dissipation (t = 10 s) (Note 2a)

Drain power dissipation (t = 10 s) (Note 2b)

Single pulse avalanche energy (Note 3)

Avalanche current IAR 13 A

Repetitive avalanche energy (Note 2a) (Note 4)

Channel temperature

Storage temperature range

(Ta = 25°C)

DC (Note 1) ID 13

Pulse (Note 1) I

V

= 5.4 mΩ (typ.)

| = 21 S (typ.)

fs

30 V

DSS

30 V

DGR

±20 V

GSS

52

DP

P

2.4 W

D

P

1.0 W

D

E

220 mJ

AS

E

0.24 mJ

AR

T

150 °C

ch

T

−55 to 150 °C

stg

A

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-6J1B

Weight: 0.080 g (typ.)

Circuit Configuration

Note 1, Note 2, Note 3 and Note 4: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

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Thermal Characteristics

Characteristics Symbol Max Unit

TPC8003

Thermal resistance, channel to ambient (t = 10 s) (Note 2a)

Thermal resistance, channel to ambient (t = 10 s) (Note 2b)

R

52.1 °C/W

th (ch-a)

125 °C/W

th (ch-a)

Marking

(Note 5)

TPC8003

Part No. (or abbreviation code) Lot No.

A line indicates lead (Pb)-free package or lead (Pb)-free finish.

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

(a)

Note 3: V

= 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 13 A

DD

Note 4: Reptitve rating: pulse width limited by maximum channel temperature

Note 5: ● on lower left of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53)

Year of manufacture (The last digit of a year)

(b)

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TPC8003

Electrical Characteristics

(Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut−off current I

V

Drain−source breakdown voltage

(BR) DSS

V

(BR) DSX

Gate threshold voltage V

R

Drain−source ON resistance

DS (ON)

R

DS (ON)

GSS

DSS

VGS = ±16 V, VDS = 0 V — — ±10 µA

VDS = 30 V, VGS = 0 V — — 10 µA

ID = 10 mA, VGS = 0 V 30 — — V

ID = 10 mA, VGS = −20 V 15 — — V

VDS = 10 V, ID = 1 mA

th

VGS = 4 V, ID = 6.5 A

VGS = 10 V, ID = 6.5 A — 5.4 7 mΩ

0.8 — 2.5 V

— 8.3 13 mΩ

Forward transfer admittance |Yfs| VDS = 10 V, ID = 6.5 A 10.5 21 — S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

— 4380 —

iss

= 10 V, VGS = 0 V, f = 1 MHz

V

— 500 —

rss

oss

DS

— 890 —

Rise time tr — 14 —

Turn−on time ton — 27 —

Switching time

Fall time tf — 72 —

pF

ns

Turn−off time t

Total gate charge (Gate−source plus gate−drain)

Gate−source charge Qgs — 60 —

Gate−drain (“miller”) charge Qgd

— 235 —

off

— 90 —

Q

g

≈ 24 V, VGS = 10 V, ID = 13 A

V

DD

nC

— 30 —

Source−Drain Ratings and Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current

Forward voltage (diode) V

Pulse (Note 1) I

DRP

DSF

IDR = 13 A, VGS = 0 V

(Ta = 25°C)

— — — 52 A

— — −1.2 V

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