查询TPC8003供应商
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8003
TPC8003
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications
Small footprint due to small and thin package
Low drain−source ON resistance : R
DS (ON)
High forward transfer admittance : |Y
Low leakage current : I
Enhancement mode : V
= 10 µA (max) (VDS = 30 V)
DSS
= 0.8~2.5 V (VDS = 10 V, ID = 1 mA)
th
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current IAR 13 A
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
(Ta = 25°C)
DC (Note 1) ID 13
Pulse (Note 1) I
V
V
V
= 5.4 mΩ (typ.)
| = 21 S (typ.)
fs
30 V
DSS
30 V
DGR
±20 V
GSS
52
DP
P
2.4 W
D
P
1.0 W
D
E
220 mJ
AS
E
0.24 mJ
AR
T
150 °C
ch
T
−55 to 150 °C
stg
A
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with
caution.
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Thermal Characteristics
Characteristics Symbol Max Unit
TPC8003
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
R
R
52.1 °C/W
th (ch-a)
125 °C/W
th (ch-a)
Marking
(Note 5)
TPC8003
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
Note 3: V
= 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 13 A
DD
Note 4: Reptitve rating: pulse width limited by maximum channel temperature
Note 5: ● on lower left of the marking indicates Pin 1.
※ Weekly code: (Three digits)
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
(b)
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TPC8003
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut−off current I
V
Drain−source breakdown voltage
(BR) DSS
V
(BR) DSX
Gate threshold voltage V
R
Drain−source ON resistance
DS (ON)
R
DS (ON)
GSS
DSS
VGS = ±16 V, VDS = 0 V — — ±10 µA
VDS = 30 V, VGS = 0 V — — 10 µA
ID = 10 mA, VGS = 0 V 30 — — V
ID = 10 mA, VGS = −20 V 15 — — V
VDS = 10 V, ID = 1 mA
th
VGS = 4 V, ID = 6.5 A
VGS = 10 V, ID = 6.5 A — 5.4 7 mΩ
0.8 — 2.5 V
— 8.3 13 mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 6.5 A 10.5 21 — S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
— 4380 —
iss
= 10 V, VGS = 0 V, f = 1 MHz
V
— 500 —
rss
oss
DS
— 890 —
Rise time tr — 14 —
Turn−on time ton — 27 —
Switching time
Fall time tf — 72 —
pF
ns
Turn−off time t
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge Qgs — 60 —
Gate−drain (“miller”) charge Qgd
— 235 —
off
— 90 —
Q
g
≈ 24 V, VGS = 10 V, ID = 13 A
V
DD
nC
— 30 —
Source−Drain Ratings and Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse
current
Forward voltage (diode) V
Pulse (Note 1) I
DRP
DSF
IDR = 13 A, VGS = 0 V
(Ta = 25°C)
— — — 52 A
— — −1.2 V
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TPC8003
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TPC8003
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TPC8003
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TPC8003
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
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2004-07-06
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