Page 1
TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type
TPC6901
TPC6901
High-Speed Switching Applications
MOS Gate Drive Applications
• NPN and PNP transistors are mounted on a compact and slim
package.
• High DC current gain : NPN h
: PNP h
• Low collector-emitter saturation voltage
: NPN V
: PNP V
• High-speed switching: NPN t
: PNP t
Maximum Ratings
Characteristics Symbol
Collector-base voltage V
Collector-emitter voltage
Collector-emitter voltage V
Emitter-base voltage V
Collector current
Base current IB 0.1 −0.1 A
Collector power
dissipation (t=10 s)
(Note 2)
Collector power
dissipation (DC)
(Note 2)
Thermal resistance,
junction to ambient
(t=10 s) (Note 2)
Thermal resistance,
junction to ambient
(DC) (Note 2)
Junction temperature Tj 150 °C
Storage temperature range T
(Ta = 25°C)
DC (Note 1)
Pulse (Note 1)
Single-device
operation
Single-device
operation
Single-device
value at dual
operation
Single-device
operation
Single-device
operation
Single-device
value at dual
operation
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
= 400 to 1000
FE
= 200 to 500
FE
= 0.17 V (max)
CE (sat)
= 0.23 V (max)
CE (sat)
= 85 ns (typ.)
f
= 70 ns (typ.)
f
CBO
V
CEX
CEO
EBO
I
1.0 0.7
C
I
CP
P
(1) 500 mW
C
(2) 400
P
C
P
(3) 330
C
R
th (j-a)
R
th (j-a)
R
th (j-a)
stg
Rating
NPN PNP
−
100
80 −50 V
−
50
−7
7
2.0 −2.0
(1) 250 °C/W
(2) 312
(3) 378
−55 to 150 °C
50
50
Unit
V
V
V
A
A
mW
°C/W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3T1A
Weight: 0.011 g (typ.)
2
)
1
2004-11-02
Page 2
Circuit Configurati on Marking
TPC6901
6 5 4
1 2 3
(or abbreviation code)
Part No.
Pin #1
Lot code (month)
H6A
Lot code
(year)
Lot No.
Product-specific code
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter breakdown voltage V
DC current gain
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 5 ⎯ pF
Rise time tr ⎯ 35 ⎯
Switching time
Storage time t
Fall time t
(Ta = 25°C) : NPN
VCB = 100 V, IE = 0 ⎯ ⎯ 100 nA
CBO
VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA
EBO
(BR) CEOIC
hFE (1) VCE = 2 V, IC = 0.1 A 400
h
(2) VCE = 2 V, IC = 0.3 A 200
FE
CE (sat)
BE (sat)
⎯ 680 ⎯
stg
f
= 10 mA, IB = 0 50 ⎯ ⎯ V
1000
⎯
⎯
IC = 300 mA, IB = 6 mA
IC = 300 mA, IB = 6 mA ⎯ ⎯ 1.10 V
See Figure 1 circuit diagram.
≈ 30 V, RL = 100 Ω
V
CC
I
= −IB2 = 10 mA
B1
⎯
⎯
⎯ 85 ⎯
⎯
0.17 V
Electrical Characteristics
(Ta = 25°C) : PNP
ns
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter breakdown voltage V
DC current gain
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 8 ⎯ pF
Rise time tr ⎯ 60 ⎯
Switching time
Storage time t
Fall time t
VCB = −50 V, IE = 0 ⎯ ⎯ −100 nA
CBO
VEB = −7 V, IC = 0 ⎯ ⎯ −100 nA
EBO
(BR) CEOIC
hFE (1) VCE = −2 V, IC = −0.1 A 200
h
(2) VCE = −2 V, IC = −0.3 A 125
FE
CE (sat)
BE (sat)
⎯ 280 ⎯
stg
f
= −10 mA, IB = 0 −50 ⎯ ⎯ V
500
⎯
⎯
⎯
IC = −300 mA, IB = −10 mA
IC = −300 mA, IB = −10 mA ⎯ ⎯ 1.10 V
See Figure 2 circuit diagram.
V
≈ 30 V, RL = 100 Ω
CC
I
= −IB2 = −10 mA
B1
⎯
⎯ 70 ⎯
0.23 V
⎯
2
2004-11-02
ns
Page 3
VCC
20 µs
I
B1
Duty cycle < 1%
I
B1
Input
I
B2
I
B2
L
R
Output
Figure 1 Switching Time Test Circuit &
Timing Chart (NPN)
TPC6901
I
B2
I
B1
20 µs
Duty cycle < 1%
Input
I
B2
I
B1
Figure 2 Switching Time Test Circuit &
Timing Chart (PNP)
V
CC
L
R
Output
3
2004-11-02
Page 4
NPN
(A)
C
Collector current I
(V)
CE (sat)
V
emitter saturation voltage
−
Collector
(A)
C
Collector current I
I
– VCE
1.0
20
0.8
0.6
0.4
0.2
0
0
C
15
IB = 1 mA
Common emitter
Ta = 25°C
Single nonrepetitive pulse
0.6 0.2
0.4 0.8 1.0 1.2
Collector−emitter voltage VCE (V)
V
– IC
1
Common emitter
β
= 50
Single nonrepetitive pulse
0.1
0.01
0.001
CE (sat)
Ta = 100°C
55°C
−
25°C
0.01 0.1
Collector current IC (A)
I
– VBE
1.0
Common emitter
2 V
V
=
CE
Single nonrepetitive pulse
0.8
0.6
0.4
0.2
0 00.2 1.0 1.2
C
Ta = 100°C
25°C
0.8 0.4 0.6
Base−emitter saturation voltage VBE (V)
10
8
6
4
2
−55°C
TPC6901
h
– IC
10000
1000
FE
100
10
DC current gain h
Common emitter
V
Single nonrepetitive pulse
1
0.001
Ta = 100°C
2 V
=
CE
Collector current IC (A)
10
Common emitter
β
= 50
Single nonrepetitive pulse
(V)
1
BE (sat)
V
Base-emitter saturation voltage
0.1
1
0.001
Collector current IC (A)
10
IC max (Pulsed)*
IC max (Continuous)*
1
(A)
C
DC operation
0.1
Collector current I
0.01
0.001
0.1
Ta = 25°C
*: Single nonr epetitive pulse
Ta = 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
2
645 mm
).
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
Collector-emitter voltage VCE (V)
FE
−55°C 25°C
0.01 0.1
V
– I
BE (sat)
25°C
0.01 0.1
C
Ta = −55°C
100°C
Safe Operation Area
1 ms*
10 ms*
100 ms*
10 s*
1 100
10
100 µs*
V
CEO
max
1
1
10 µs*
4
2004-11-02
Page 5
PNP
(A)
C
Collector current I
(V)
CE (sat)
emitter saturation voltage
−V
−
Collector
(A)
C
Collector current I
I
– VCE
−1.0
−0.8
−0.6
−
−0.2
0.4
0
0
C
−50−100
Common emitter
Ta = 25°C
Single nonrepetitive puls e
−0.6 −0.2
−0.4 −0.8 −1.0 −1.2
Collector−emitter voltage VCE (V)
V
– IC
10
Common emitter
β = 30
Single nonrepetitive pulse
1
0.1
0.01
0.001
0.001
CE (sat)
Ta = 100°C
55°C
−
25°C
0.01 0.1
Collector current −IC (A)
I
– VBE
−1.0
Common emitter
VCE = −2 V
Single nonrepetitive pulse
−0.8
0.6
−
−0.4
−0.2
0
0
C
Ta = 100°C
−0.8 −0.2 −0.4
−0.6 −1.0 −1.2
Base−emitter saturation voltage VBE (V)
25°C
−40
30
−
20
−
−15
−10
5
−
2
−
IB = −1 mA
55°C
−
TPC6901
h
– IC
10000
Common emitter
VCE = −2 V
Single nonrepetitive pulse
1000
FE
100
10
DC current gain h
1
0.001
Collector current −IC (A)
10
Common emitter
β = 30
Single nonrepetitive pulse
(V)
emitter saturation voltage
−
1
BE (sat)
−V
Base
1
0.1
0.001
Collector current −IC (A)
10
IC max (Pulse)*
1
IC max (Continuous)*
(A)
C
0.1
Collector current I
0.01
0.001
0.1
DC operation
Ta = 25°C
*: Single no nrepetitive pulse
Ta = 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
2
645 mm
).
Single-device operation
These characteristic cu rves must
be derated linearly with increase
in temperature.
Collector−emitter voltage VCE (V)
FE
Ta = 100°C
25°C
0.01 0.1
55°C
−
V
– I
BE (sat)
Ta = −55°C
25°C
0.01 0.1
C
100°C
Safe operation area
100 µs*
1 ms*
10 ms*
100 ms*
10 s*
V
1 100
10
CEO
10 µs*
max
1
1
5
2004-11-02
Page 6
Common
TPC6901
r
– tw
th
1000
100
(j-a) (°C/W)
10
th
r
Curves should be applied in thermal limited area.
Transient thermal resistance
1
0.001
0.01 0.1 1 10 100
Single nonrepetitive pulse Ta = 25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645
2
mm
)
Pulse width tw (s)
Permissible Power Dissipation for
Simultaneous Operation
DC operation
Ta = 25°C
Mounted on an FR4 board gl ass epoxy,
1.6 mm thick, Cu area: 645 mm
Permissible power dissipation for Q1
Collector power dissipation at the single- device
operation is 0.4W.
Collector power dissipation at the single- device value at
dual operation is 0.33W.
Collector power dissipation at the dual operation is set
to 0.66W.
(W)
P
C
Permissible power dissipation for Q2
0.5
0.4
0.3
(W)
C
P
0.2
0.1
0
0
1000
0.3 0.1 0. 2
2
)
0.4 0.5
6
2004-11-02
Page 7
TPC6901
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
7
2004-11-02
Loading...