TOSHIBA TPC6501 Technical data

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TOSHIBA Transistor Silicon NPN Epitaxial Type

TPC6501

TPC6501

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Applications

• High DC current gain: h

• Low collector-emitter sa turation voltage: V

• High-speed switching: tf = 25 ns (typ.)

Maximum Ratings

Characteristics Symbol Rating Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage V

Collector current

Base current IB 200 mA

Collector power
dissipation

Junction temperature Tj 150 °C

Storage temperature range T

Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:

645 mm

2

)

Electrical Characteristics

= 400 to 1000 (IC = 0.2 A)

FE

CE (sat)

= 0.12 V (max)

(Ta ==== 25°C)

CBO

CEO

EBO

DC IC 2.0

Pulse I

DC 0.8

t = 10 s

(Ta ==== 25°C)

3.5

CP

P

C

(Note)

stg

20 V

10 V

7 V

A

W

1.6

−55 to 150 °C

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3T1A

Weight: 0.011 g (typ.)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current I

Emitter cut-off current I

Collector-emitter breakdown voltage V

DC current gain

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

Rise time tr  60 

Switching time

Storage time t

Fall time t

VCB = 20 V, IE = 0   100 nA

CBO

VEB = 7 V, IC = 0   100 nA

EBO

(BR) CEO

hFE (1) VCE = 2 V, IC = 0.2 A 400  1000

h

IC = 10 mA, IB = 0 10   V

(2) VCE = 2 V, IC = 0.6 A 200  

FE

IC = 0.6 A, IB = 12 mA   0.12 V

CE (sat)

IC = 0.6 A, IB = 12 mA   1.10 V

BE (sat)

See Figure 1 circuit diagram.

 215 

stg

f

−

CC

= −IB2 = 12 mA

I

B1

∼

V

1

6 V, R

= 10 Ω

L

 25 

2001-12-18

ns

TPC6501

Circuit Configuration Marking

VCC

6

20 µs

I

B1

Duty cycle < 1%

IB2

Input

I

B1

I

B2

L

R

Output

Figure 1 Switching Time Test Circuit &

Timing Chart

5 4

H 2 A

1 2 3

2

2001-12-18