查询TPC6103供应商
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC6103
TPC6103
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: R
• High forward transfer admittance: |Y
• Low leakage current: I
• Enhancement mode: V
= −10 µA (max) (VDS = −12 V)
DSS
= −0.5 to −1.2 V
th
= −10 V,ID = −200 µA)
(V
DS
= 29 mΩ (typ.)
DS (ON)
| = 13 S (typ.)
fs
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage V
Drain current
Drain power dissipation (t = 5 s)
(Note 2a)
Drain power dissipation (t = 5 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current IAR −2.75 A
Repetitive avalanche energy (Note 4) EAR 0.22 mJ
Channel temperature Tch 150 °C
Storage temperature range T
(Ta = 25°C)
DC (Note 1) ID −5.5
Pulse (Note 1) I
DSS
DGR
±8 V
GSS
−22
DP
P
2.2 W
D
0.7 W
P
D
5.3 mJ
E
AS
stg
12 V
−
12 V
−
55~150 °C
−
A
Thermal Characteristics
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3T1A
Weight: 0.011 g (typ.)
Circuit Configurati on
6 4
5
Characteristics Symbol Max Unit
Thermal resistance, channel to
ambient (t = 5 s) (Note 2a)
Thermal resistance, channel to
ambient (t = 5 s) (Note 2b)
R
th (ch-a)
R
th (ch-a)
56.8 °C/W
178.5 °C/W
Note 1, (ote 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
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TPC6103
∼
∼
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-off current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = −10 V, ID = −200 µA
Drain-source ON resistance
Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.8 A 6.5 13 ⎯ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr ⎯ 9.5 ⎯
Turn-on time ton ⎯ 16 ⎯
Switching time
Fall time tf ⎯ 28 ⎯
Turn-off time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge Qgs ⎯ 15 ⎯
Gate-drain (“miller”) charge Qgd
(Ta = 25°C)
VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±10 µA
GSS
VDS = −12 V, VGS = 0 V ⎯ ⎯ −10 µA
DSS
V
(BR) DSSID
V
(BR) DSXID
R
DS (ON)
R
DS (ON)
R
DS (ON)
iss
rss
oss
off
Q
⎯ 20 ⎯
g
= −10 mA, VGS = 0 V −12 ⎯ ⎯
= −10 mA, VGS = 8 V
VGS = −1.8 V, ID = −1.4 A
VGS = −2.5 V, ID = −2.8 A ⎯ 42 55
VGS = −4.5 V, ID = −2.8 A ⎯ 29 35
⎯ 1520 ⎯
= −10 V, VGS = 0 V, f = 1 MHz
V
⎯ 330 ⎯
DS
0 V
V
GS
5 V
−
Ω
4.7
Duty
1%, tw = 10 µs
10 V, V
V
−
DD
I
= −5.5 A
D
−
ID = −2.8 A
V
OUT
Ω
2.1
=
L
R
6 V
V
−
DD
= −5 V,
GS
4
0.5
−
⎯
⎯
⎯ 74 ⎯
⎯ 5 ⎯
⎯
⎯ −
65 90
380 ⎯
⎯
1.2 V
Source-Drain Ratings and Characteristics
(Ta = 25°C)
V
mΩ
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse
current
Forward voltage (diode) V
Pulse (Note 1) I
DRP
DSF
IDR = −5.5 A, VGS = 0 V — — 1.2 V
— — —
2
22 A
−
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TPC6103
Marking
(or abbreviation code)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
(Note 5)
Part No.
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
DD
Lot code (month)
Lot No.
S3C
Product-specific code
Pin #1
= −10 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −2.75 A
Lot code
(year)
(a)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
FR-4
25.4 × 25.4 × 0.8
Unit: (mm)
(b)
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TPC6103
−
−5−
I
– VDS
−5
−5
−4
(A)
D
−3
−2.5
−4, −4.5
D
1.8
−
−1.9
−2
−3
−2
Drain current I
1
−
0
0
−0.4 −0.8 −1.2 −2.0
Drain-source voltage VDS (V)
I
– VGS
D
100°C
25°C
(A)
D
−10
−8
−6
−4
Common source
VDS = −10 V
Pulse test
Drain current I
2
−
0
0 −0.5 −1 −1.5 −2 − 2.5
Ta = −55°C
Gate-source voltage VGS (V)
−1.7
−1.6
−
VGS = −1.4 V
Common source
Ta = 25 °C Pulse test
−1.6
I
– VDS
−10
2.5
−
−8
(A)
D
6
1.5
−
−4
Drain current I
−2
0
0 −1 −2 −3 −4 −5
D
−2
3
4
Common source
Ta = 25°C Pulse test
−1.9
−1.8
−1.7
1.6
−
VGS = −1.4 V
Drain-source voltage VDS (V)
V
– VGS
−1
−0.8
(V)
DS
−0.6
−0.4
0.2
−
Drain-source voltage V
−1.1 A
0
0 −2 −4 −6 −8 −10
Gate-source voltage VGS (V)
DS
Common source
Ta = 25°C
Pulse test
ID = −4.5 A
2.2 A
−
|Y
| – ID
100
Common source
VDS = −10 V
Pulse test
30
| (S)
fs
10
3
1
0.3
fs
Ta = −55°C
100°C
25°C
1
0.3
)
Ω
(m
0.1
DS (ON)
R
0.03
Drain-source on resistance
R
DS (ON)
−1.8 V
VGS = −4.5 V
– ID
Common source
Ta = 25°C
Pulse test
−2.5 V
Forward transfer admittance |Y
0.1
−0.3 −3 −30
−0.1 −1 −10 −100
Drain current ID (A)
0.01
−0.3 −3 − 30
−0.1 −1 −10 −100
Drain current ID (A)
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160
Common source
Pulse test
120
R
DS (ON)
– Ta
I
– VDS
−100
(A)
30
−
DR
DR
Common source
Ta = 25°C
Pulse test
(mΩ)
80
VGS = −1.8 V
DS (ON)
R
40
Drain-source on resistance
−2.5 V
−4.5 V
0
−80 −40 0 40 80 160120
Ambient temperature Ta (°C)
−2.2 A
ID = −1.1A
ID = −1.1A
ID = −1.1 A, −2.2 A, −4.5 A
−4.5 A
−2.5 A
−10
3
−
Drain reverse current I
−1
0 0.4 0.8 1.2 1.6 2.0
−4.5
−2.0
−1.8
−1
VGS = 0 V
Drain-source voltage VDS (V)
10000
3000
1000
300
100
Capacitance C (pF)
Common source
Ta = 25°C
30
f = 1 MHz
VGS = 0 V
10
−0.1 −1 −10 −100
Capacitance – V
−0.3 −3 −30
Drain-source voltage VDS (V)
DS
C
iss
C
oss
C
rss
V
– Ta
−2.0
(V)
−1.5
th
−1.0
−0.5
Gate threshold voltage V
0
−80 −40 0 40 80 160
Ambient temperature Ta (°C)
th
Common source
VDS = −10 V
ID = −200 µA
Pulse test
120
2.5
(1) t = 5 s
2
(W)
D
1.5
(1) DC
1
(2) t = 5 s
0.5
(2) DC
Drain power dissipation P
0
0
40 80 120 160
Ambient temperature Ta (°C)
P
– Ta
D
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
Dynamic input/output characteristics
−20
Common source
ID = −6 A
Ta = 25°C
−16
(V)
Pulse test
DS
−12
VDD = −10 V
−8
5
−
−4
Drain-source voltage V
0
0816
−2.5 V
Total gate charge Qg (nC)
VGS
−2.5 V
VDD = −10 V
−5 V
24 32 40
−10
−8
−6
−4
−2
0
(V)
GS
Gate-source voltage V
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TPC6103
1000
r
th
– tw
300
100
(°C/W)
th
30
10
3
1
Transient thermal impedance r
0.3
0.1
0.001 0.01 0.1 10 100 1000
−100
−30
ID max (pulsed)*
10
−
−3
(A)
−1
D
−0.3
−0.1
Drain current I
−0.03
−0.01
*
: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
−0.003
linearly with increase in
temperature
−0.001
−0.01 −0.03 −0.1 −0.3 −1 −3 −10 −100−30
Safe operating area
Drain-source voltage VDS (V)
10 ms*
V
DSS
Device mounted on a glass-
epoxy board (b) (Note 2b)
1 ms*
max
Device mounted on a glass-
epoxy board (a) (Note 2a)
1
Pulse width tw (s)
Single pulse
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2004-07-06
TPC6103
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
7
2004-07-06
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