查询TPC6003供应商
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6003
TPC6003
Notebook PC Applications
Portable Equipment Applications
· Low drain-source ON resistance: R
· High forward transfer admittance: |Y
· Low leakage current: I
· Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kW) V
Gate-source voltage V
Drain current
Drain power dissipation (t = 5 s)
Drain power dissipation (t = 5 s)
Single pulse avalanche energy (Note 3) EAS 5.8 mJ
Avalanche current IAR 3 A
Repetitive avalanche energy (Note 4) EAR 0.22 mJ
Channel temperature Tch 150 °C
Storage temperature range T
= 10 µA (max) (VDS = 30 V)
DSS
(Ta ==== 25°C)
DC
(Note 1)
Pulse
(Note 1)
(Note 2a)
(Note 2b)
DS (ON)
= 19 mΩ (typ.)
| = 7 S (typ.)
fs
30 V
DSS
30 V
DGR
±20 V
GSS
6
I
D
24
I
DP
2.2 W
P
D
0.7 W
P
D
-55 to 150 °C
stg
A
Thermal Characteristics
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
6 4
5
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient
(t = 5 s) (Note 2a)
Thermal resistance, channel to ambient
(t = 5 s) (Note 2b)
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
This transistor is an electrostatically sensitive device. Please handle it
with caution.
R
R
56.8 °C/W
th (ch-a)
178.5 °C/W
th (ch-a)
1
Marking
1 2 3
(Note 5)
S 2 D
2002-01-15
TPC6003
<
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-OFF current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ¾ 2.5 V
Drain-source ON resistance R
Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 3.5 7 ¾ S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr ¾ 5 ¾
Turn-ON time ton ¾ 11 ¾
Switching time
Fall time tf ¾ 9 ¾
Turn-OFF time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge Qgs ¾ 20 ¾
Gate-drain (“miller”) charge Qgd
(Ta ==== 25°C)
VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA
GSS
VDS = 30 V, VGS = 0 V ¾ ¾ 10 mA
DSS
V
(BR) DSSID
V
(BR) DSXID
DS (ON)
¾ 1250 ¾
iss
¾ 155 ¾
rss
oss
off
Q
¾ 25 ¾
g
= 10 mA, VGS = 0 V 30 ¾ ¾
= 10 mA, VGS = -20 V 15 ¾ ¾
VGS = 4.5 V, ID = 3 A ¾ 25 32
= 10 V, ID = 3 A ¾ 19 24
V
GS
VDS = 10 V, VGS = 0 V, f = 1 MHz
¾ 170 ¾
V
Duty
V
DD
GS
~
-
10 V
0 V
1%, tw = 10 ms
24 V, V
ID = 3 A
4.7 W
V
DD
= 10 V, ID = 6 A
GS
~
-
V
= 5 W
L
R
15 V
OUT
¾ 63 ¾
¾ 5 ¾
Source-Drain Ratings and Characteristics
(Ta ==== 25°C)
V
mW
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Pulse drain reverse current (Note 1) I
Forward voltage (Diode) V
¾ ¾ ¾ 24 A
DRP
IDR = 6 A, VGS = 0 V ¾ ¾ -1.2 V
DSF
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 ´ 25.4 ´ 0.8
Unit: (mm)
(a)
FR-4
2510 ms*
(b)
Note 3: V
= 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 W, IAR = 3.0 A
DD
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: Black round marking “·” locates on the left lower side of parts number marking “S2D” indicates terminal
No.1.
2
2002-01-15
TPC6003
5
8
4
(A)
D
3
2
Drain current I
1
10
3.2
6
0
0 0.1 0.2 0.3 0.4 0.5
Drain-source voltage VDS (V)
12
Common source
VDS = 10 V
10
Pulse test
8
6
Drain current
4
2
0
0 2 3 4 5
100°C
1
Gate-source voltage VGS (V)
100
50
| (S)
fs
30
Ta = -55°C
10
5
3
Forward transfer admittance |Y
1
1 3 5 30 50 100
100°C
Dain current ID (A)
25°C
– VDS
I
D
3
– VGS
I
D
|Y
fs
2.8 4 2.7
Ta = -55°C
| – ID
25°C
10
VGS = 2.3 V
Common source
Ta = 25°C
Pulse test
Common source
VDS = 10 V
Pulse test
2.6
2.5
– VDS
I
10
4
6, 8, 10
3
8
(A)
D
6
4
Drain current I
2
0
0123 4 5
Drain-source voltage VDS (V)
D
2.8
2.7
2.6
2.5
VGS = 2.4 V
Common source
Ta = 25°C
Pulse test
V
– VGS
0.6
0.5
(V)
DS
0.4
0.3
0.2
0.1
Drain-source voltage V
1.5 A
0
Gate-source voltage VGS (V)
DS
Common source
Ta = 25°C
Pulse test
ID = 6 A
3 A
100246 8
DS (ON)
4.5 V
VGS = 10 V
– ID
Common source
Ta = 25°C
Pulse test
100
R
30
(m9)
10
DS (ON)
R
3
Drain-source on resistance
1
0.1 0.3 1 3 30 10010
Drain current ID (A)
3
2002-01-15
TPC6003
Drain-source on resistance
(m9)
R
DS (ON)
50
Common source
Pulse test
40
30
VGS = 4.5 V
20
10
ID = 1.5 A, 3 A
VGS = 10 V
0
-80 -40 0 40 80 160120
Ambient temperature Ta (°C)
10000
3000
1000
300
100
Capacitance C (pF)
Common source
30
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
0.1 1 10 100
Capacitance – V
0.3 3 30
Drain-source voltage VDS
2.5
(1) t = 5 s
2
D
1.5
0.5
1
0
0
(1) DC
(2) t = 5 s
(2) DC
40 80 120 160
Ambient temperature Ta (°C)
Drain power dissipation P
DS (ON)
– Ta
R
– Ta
P
D
(1) Device mounted on a
(2) Device mounted on a
ID = 6 A
ID = 1.5 A, 3 A, 6 A
DS
C
iss
C
oss
C
rss
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
I
– VDS
100
30
(A)
DR
10
3
1
0.3
Drain reverse current I
0.1
0 -0.8 -1.2 -1.6
Drain-source voltage VDS (V)
DR
Common source
Ta = 25°C
Pulse test
-2.0-0.4
– Ta
V
3.5
3.0
(V)
th
2.5
2.0
1.5
1.0
Gate threshold voltage V
0.5
0
-80 -40 0 40 80 160
Ambient temperature Ta (°C)
th
Common source
VDS = 10 V
ID = 1 mA
Pulse test
120
Dynamic input/output characteristics
50
Common source
ID = 6 A
Ta = 25°C
40
(V)
Pulse test
DS
30
VDD = 24 V
20
10
Drain-source voltage V
12 V
6 V
0
0816
Total gate charge Qg (nC)
12 V
6 V
VDD = 24 V
24 32 40
VGS
25
20
15
10
5
0
(V)
GS
Gate-source voltage V
4
2002-01-15
TPC6003
1000
300
100
Device mounted on a glass-
epoxy board (b) (Note 2b)
30
10
Transient
3
1
0.3
0.1
0.001 0.01 0.1 10 100 1000
100
ID max (pulsed)*
30
Safe operating area
10
3
(A)
1
D
0.3
0.1
Drain current I
0.03
1 ms*
10 ms*
0.01
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
0.003
linearly with increase in
temperature
0.001
0.01 0.03 0.1 0.3 1 3 10 10030
Drain-source voltage VDS (V)
V
DSS
max
- tw
r
th
Device mounted on a glass-
epoxy board (a) (Note 2a)
1
Pulse tw (s)
Single pulse
5
2002-01-15
TPC6003
A
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
6
2002-01-15
Loading...