TOSHIBA TLPGE19TPF, TLFGE19TPF, TLGE19TPF, TLPYE19TPF Technical data
查询TLGE19TPF供应商
TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F)
TOSHIBA InGaAℓP LED
TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F)
Panel Circuit Indicator
• Lead(Pb)-free products (lead: Sn-Ag-Cu)
• 5mm package
• InGaAℓP technology
• All plastic mold type
• Transparent lens
• Lineup: 3colors (pure green, green, pure yellow)
• High intensity light emission
• Excellent low current light output
• Applications: Traffic signals, Safety equipment, Backlight
• Stopper lead type is also available
TLPGE19T(F), TLFGE19T(F), TLGE19T(F), TLPYE19T(F)
Lineup
Product Name Color Material
TLPGE19TP(F) Pure Green
TLFGE19TP(F) Green
TLGE19TP(F) Green
TLPYE19TP(F) Pure Yellow
Absolute Maximum Ratings
(Ta = 25°C)
PInGaAl
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 4-5AM2
Weight: 0.31 g(Typ.)
Product Name
TLPGE19TP(F) 50 4 120
TLFGE19TP(F) 50 4 120
TLGE19TP(F) 50 4 120
TLPYE19TP(F) 50 4 120
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Forward Current
I
(mA)
F
Reverse Voltage
VR (V)
Power Dissipation
PD (mW)
Operating
Temperature
T
(°C)
opr
−40~100 −40~120
Temperature
Storage
T
(°C)
stg
1
2007-10-01
TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F)
Electrical and Optical Characteristics
(Ta = 25°C)
Product Name
TLPGE19TP(F) 558 (562) 14 20 153 500 20 2.1 2.4 20 50 4
TLFGE19TP(F) 565 (568) 15 20 272 800 20 2.0 2.4 20 50 4
TLGE19TP(F) 571 (574) 17 20 476 1300 20 2.0 2.4 20 50 4
TLPYE19TP(F) 580 (583) 14 20 476 2000 20 2.0 2.4 20 50 4
Unit nm mA mcd mA V mA μA V
Typ. Emission Wavelength
λ
λP Δλ IF Min Typ. IF Typ. Max IF Max VR
d
Luminous Intensity
I
V
Forward Voltage
VF
Reverse Current
IR
Precautions
Please be careful of the following:
• Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 1.6 mm from the body of the device)
• If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
• This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2007-10-01
TLPGE19TP(F)
TLPGE19TP(F),TLFGE19TP(F),TLGE19TP(F),TLPYE19TP(F)
100
(mA)
F
Ta = 25°C
50
30
10
I
F
– VF
I
– IF
5000
Ta = 25°C
1000
(mcd)
V
V
5
3
Forward current I
1
1.7 2.1
1.8 1.9 2.2
2.0 1.6
Forward voltage VF (V)
2.3
100
Luminous intensity I
10
3 5 30 50
101
Forward current IF (mA)
100
I
– Tc
10
V
5
3
V
Relative luminous intensity – Wavelength
1.0
0.8
IF = 20 mA
Ta = 25°C
0.6
1
0.5
0.3
Relative luminous intensity I
0.1
20 −20
0 40 60
80
Case temperature Tc (°C)
0.4
0.2
Relative luminous intensity
0
560520
540 580 600 620
Wavelength λ (nm)
640
Radiation pattern
Ta
= 25°C
0°
10°
20°
60°
70°
80°
90°
30°
40°
50°
10°
20°
30°
40°
50°
60°
70°
1.00.80.6 0.4 0.2 0
80°
90°
I
– Ta
80
(mA)
F
60
40
20
F
Allowable forward current I
0
400
20 60 80 100
120
Ambient temperature Ta (°C)
3
2007-10-01
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