TOSHIBA TLP795G Technical data
TOSHIBA
PHOTO RELAY
T elecomm unication
Data Acquisition
Measurement Instrumentation
The Toshiba TLP795G consists of an aluminum gallium
arsenide infrared emitting diode optically coupled to a
photo-MOSFET in a six lead plastic DIP package. The
TLP795G is a bi-directional switch which can replace
mechanical relays in many applications.
• Peak Off-State Voltage : 400V (Min.)
• Trigger LED Current : 5mA (Max.)
• On-State Current : 150mA (Max.) (A Connection)
• On-State Resistance : 12 Ω (Max.) (A Connection)
• Isolation Voltage : 0.4mm (Min.)
• Isolation Voltage : 5000V
rms
(Min.)
TLP795G
Unit in mm
Supplementary Information
Lead Form Options 31-32
Tape and Reel 39-40
Page (s)
Pin Configuration (Top View) Schematic
The information contained here is subject to change without notice.
The information contained herein is presented only as guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic
equipments (office equipment, communication equipment, measuring equipment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in equipments which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types
of safety devices, etc.). TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
TOSHIBA CORPORATION
615
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TLP795G
Maximum Ratings (Ta = 25 ° C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current I
Forward Current Derating (Ta ≥ 25 ° C)
LED
Peak Forward Current (100 µ s pulse, 100pps) I
Reverse Voltage V
Junction Temperature T
Off-State Output Terminal Voltage V
A Connection
On-State RMS Current
DETECTOR
C Connection 300
A Connection
On-State Current Derating (Ta ≥ 25 ° C)
C Connection -3.0
Junction Temperature t
Storage Temperature Range T
Operating Temperature Range T
Lead Soldering Temperature (10s) T
Isolation Voltage (AC, 1 min., R.H. ≤ 60%) (Note 1) BV
Note 1:Device considered a two terminal device: pins 1, 2 and 3 shorted together, and pins 4, 5 and 8 shorted together.
I
I
F
OFF
I
ON
ON
F
C
FP
R
j
C
j
stg
opr
sol
S
30
-0.3 mA/ ° C
1
5
125
400
150
-1.5
mA/ ° CB Connection -2.0
125
-55~100
-20~85
260
5000
mA
mAB Connection 200
V
A
V
C
V
C
C
C
C
rms
Recommended Operating Conditions
CHARACTERISTIC SYMBOL MIN. TYP. MX. UNIT
Supply Voltage V
Forward Current I
On-State Current I
Operating Temperature T
Circuit Connections
DD
ON
opr
– – 320 V
F
10
–
-20 – 80
15 20 mA
– 150 mA
C
616
TOSHIBA CORPORATION
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