TOSHIBA TLP627A-2, TLP627A-4 Technical data

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TLP627A,TLP627A-2,TLP627A-4

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP627A,TLP627A-2,TLP627A-4

TELECOMMUNICATION

PROGRAMMABLE CONTROLLERS

DC-OUTPUT MODULE

The TOSHIBA TLP627A, -2, and -4 consist of a gallium arsenide
infrared emitting diode optically coupled to a darlington connected
phototransistor which has a 350V high voltage of collector-emitter
breakdown voltage.
The TLP627A-2 offer two isolated channels in a eight lead plastic DIP
package, while the TLP627A-4 provide four isolated channels per
package.

z Collector-Emitter Voltage : 350V(MIN)
z Current Transfer Ratio : 1500% (MIN)
z Isolation Voltage : 5000Vrms(MIN)

Pin Configuration (top view)

TOSHIBA 11−5B2

Weight : 0.26 g

単位: mm

TLP627A TLP627A-2 TLP627A-4

1 : ANODE

2 : CATHODE

3 : EMITTER

4 : COLLECTOR

1, 3 : ANODE

2, 4 : CATHODE

5, 7 : EMITTER

6, 8 : COLLECTOR

1, 3, 5, 7 : ANODE

2, 4, 6, 8 : CATHODE

9, 11, 13, 15 : EMITTER

10, 12, 14, 16 : COLLECTOR

TOSHIBA 11−10C4

Weight : 0.54 g

TOSHIBA 11−20A3

Weight : 1.1 g

1

2007-10-01

TLP627A,TLP627A-2,TLP627A-4

Absolute Maximum Ratings

CHARACTERISTICS SYMBOL

Forward Current IF 60 50 mA

Forward Current Derating ΔIF /℃ −0.7 (Ta≧39℃) −0.5 (Ta≧25℃)mA /℃

LED

Pulse Forward Current IFP 1 (100μs Pulse、100 pps) A

Reverse Voltage VR 5 V

Collector-Emitter Voltage V

Emitter-Collector Voltage V

Collector Current IC 150 mA

Collector Power Dissipation (1 circuit) PC

DETECTOR

Collector Power Dissipation Derating
(Ta≧25℃, 1 Circuit)

Storage Temperature Range T

Operating Temperature Range T

Lead Soldering Temperature T

Total Package Power Dissipation (1 circuit) PT

Total Package Power Dissipation Derating
(Ta≧25℃, 1 circuit)

Isolation Voltage BVS

(Ta = 25°C)

ΔP

ΔP

RATING

TLP627A

350 V

CEO

0.3 V

ECO

150
(300) (* )

−1.5

/℃

C

(−3.5) (* )

−55～125 ℃

stg

−55～100 ℃

opr

260 (10 sec) ℃

sol

250
(320) (* )

−2.5

/℃

T

(−3.2) (* )

(AC、1 min、R.H.≦60%) (** )

TLP627A−2
TLP627A−4

100 mW

−1.0 mA /℃

150 mW

−1.5 mW /℃

5000

UNIT

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

* : IF = 20 mA max
** : Device considered a two terminal device : LED side pins shorted together and

DETECTOR side pins shorted together.

Recommended Operating Conditions

CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT

Supply Voltage VCC ― ― 200 V

Forward Current IF ― 16 25 mA

Collector Current IC ― ― 120 mA

Operating Temperature T

−25 ― 85 ℃

opr

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

Individual Electrical Characteristics

product, please confirm specified characteristics shown in this document.

(Ta = 25°C)

CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V

Reverse Current IR VR = 5 V ― ― 10 μA

LED

Capacitance CT V = 0, f = 1 MHz ― 30 ― pF

Collector-Emitter Breakdown Voltage V

Emitter-Collector Breakdown Voltage V

Collector Dark Current I

DETECTOR

Capacitance Collector to Emitter CCE V = 0, f = 1 MHz ― 10 ― pF

(BR) CEOIC

(BR) ECOIE

CEO

VCE = 300 V ― 10 200 nA

V

CE

= 0.1 mA 350 ― ― V

= 0.1 mA 0.3 ― ― V

= 300 V, Ta = 85℃ ― ― 20 μA

2

2007-10-01