Toshiba TLP627, TLP627-2, TLP627-4 Technical data

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TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP627,TLP627-2,TLP627-4
TLP627,TLP627-2,TLP627-4
PROGRAMMABLE CONTROLLERS
DC-OUTPUT MODULE
The TOSHIBA TLP627,-2 and -4 consists of a gallium arsenide infrared emitting diode optically coupled to a darlington connected phototransistor which has an integral base-emitter resistor to optimize switching speed and elevated temperature characteristics.
The TLP627-2 offers two isolated channels in a eight lead plastic DIP, while the TLP627-4 provide four isolated channels per package.
z Collector-Emitter Voltage z Current Transfer Ratio z Isolation Voltage z UL Recognized
: 300V(Min)
: 1000%(Min)
: 5000Vrms(Min)
: UL1577,File No.E67349
MADE IN JAPAN MADE IN THAILAND
Unit in mm
TOSHIBA 11−5B2
Weight: 0.26 g
UL Recognized E67349 *1 E152349 *1
BSI Approved 7426, 7427 *2 7426, 7427 *2
*
1 UL1577
*2 BS EN60065: 2002, BS EN60950-1: 2002
PIN CONFIGURATION (TOP VIEW)
TLP627
1
2
1: ANODE 2: CATHODE 3: EMITTER 4:COLLECTOR
4
3
TLP627-2
1
2
3
4 5
1,3: ANODE 2,4: CATHODE 5,7: EMITTER 6,8:COLLECTOR
8
1
2
7
6
3
4
5
6
7
8
1,3,5,7 : ANODE 2,4,6,8 : CATHODE 9,11,13,15 : EMITTER 10,12,14,16 :COLLECTOR
TLP627-4
16
15
14
13
12
11
10
9
TOSHIBA 11−10C4
Weight: 0.54 g
TOSHIBA 11−20A3
Weight: 1.1 g
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TLP627,TLP627-2,TLP627-4
Absolute Maximum Ratings
(Ta=25°C)
RATING
CHARACTERISTIC SYMBOL
Forward Current I
TLP627
F
60 50 mA
TLP627-2 TLP627-4
UNIT
Forward Current Derating ∆IF /°C −0.7(Ta≥39°C) −0.5(Ta≥25°C) mA /°C
Pulse Forward Current I
Power Dissipation (1 Circuit) P
LED
FP
D
1(100μs pulse,100pps) A
100 70 mW
Power Dissipation Derating (Ta≥25°C,1 Circuit) PD /°C -1.0 -0.7 mW /°C
Reverse Voltage VR 5 V
Junction Temperature Tj 125 °C
Collector-Emitter Voltage V
Emitter -Collector Voltage V
Collector Current I
CEO
ECO
C
300 V
0.3 V
150 mA
Collector Power Dissipation (1 Circuit) PC 150(*300) 100 mW
DETECTOR
Collector Power Dissipation Derating (Ta25°C,1 Circuit) Pc /°C
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Lead Soldering Temperature (10s) T
j
opr
stg
sold
-1.5(*-3.5) -1.0 mW /°C
125 °C
55~100 °C
55~125 °C
260(10sec) °C
Total Package Power Dissipation PT 250(*320) 150 mW
Total Package Power Dissipation Derating (Ta25°C,1 Circuit) ∆ PT/°C -2.5(*-3.2) -1.5 mW /°C
Isolation Voltage (AC,1min. , R.H.≤60%) (Note1) BV
S
5000 V rm s
*IF=20mA Max
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(Note1)Device considered a two terminal device : LED side pins Shorted together and
together.
DETECTOR side pins shorted
Recommended Operating Conditions
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Supply Voltage V
CC
Forward Current IF — 16 25 mA
Collector Current I
Operating Temperature T
C
opr
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
— — 200 V
— — 120 mA
25 — 85 °C
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TLP627,TLP627-2,TLP627-4
Individual Electrical Characteristics
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage V
Reverse Current IR VR = 5 V 10 μA
LED
Capacitance C
Collector-Emitter Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector Dark Current I
DETECTOR
Capacitance Collector
to Emitter
V
(BR)CEO
V
(BR)ECO
C
IF = 10 mA 1.0 1.15 1.3 V
F
V = 0 , f=1MHz 30 pF
T
IC = 0.1mA 300 V
IE = 0.1mA 0.3 V
VCE = 200V 10 200 nA
CEO
V
= 200V , Ta = 85°C 20 μA
CE
V=0 , f=1MHz 10 pF
CE
(Ta=25°C)
Coupled Electrical Characteristics
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Current Transfer Ratio IC/I
Saturated CTR IC/IF(sat) IF=10mA , VCE=1V 500 %
Collector-Emitter
Saturation Voltage
V
CE
F
(sat)
(Ta=25°C)
IF=1mA , VCE=1V 1000 4000 %
IC=10mA , IF=1mA — 1.0
IC=100mA , IF=10mA
0.3
1.2
V
Isolation Electrical Characteristics
(Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Capacitance Input to Output C
Isolation Resistance RS V
Isolation Voltage BVs
S
VS=0 , f=1MHz 0.8 pF
=500V , R.H.≤60% 5×10
S
AC, 1minute 5000
AC, 1second, in oil 10000
DC, 1 minute, in oil 10000 Vdc
10
1014 — Ω
Vrms
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TLP627,TLP627-2,TLP627-4
Switching Characteristics
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Rise Time tr 40
Fall Time tf 15
Turn-on Time ton 50
Turn-off Time toff
Turn-on Time tON 5
Strage Time ts 40
Turn-off Time tOFF
(Ta=25°C)
V
=10V
CC
=10mA
I
C
=100Ω
R
L
=180Ω (Fig.1)
R
L
=10V , IF=16mA
V
CC
— 15 —
— 80 —
Fig.1 SWITCHING TIME TEST CIRCUIT
IF
RL
VCC
VCE
μs
IF
VCE
tON
ts
9V
1V
tOFF
VCC
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TLP627,TLP627-2,TLP627-4
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.
20070701-EN
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.
Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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