Toshiba TLP627, TLP627-2, TLP627-4 Technical data

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TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP627,TLP627-2,TLP627-4

TLP627,TLP627-2,TLP627-4

PROGRAMMABLE CONTROLLERS

DC-OUTPUT MODULE

TELECOMMUNICATION

The TOSHIBA TLP627,-2 and -4 consists of a gallium arsenide infrared
emitting diode optically coupled to a darlington connected phototransistor
which has an integral base-emitter resistor to optimize switching speed and
elevated temperature characteristics.

The TLP627-2 offers two isolated channels in a eight lead plastic DIP,
while the TLP627-4 provide four isolated channels per package.

z Collector-Emitter Voltage
z Current Transfer Ratio
z Isolation Voltage
z UL Recognized

: 300V(Min)

: 1000%(Min)

: 5000Vrms(Min)

: UL1577,File No.E67349

MADE IN JAPAN MADE IN THAILAND

Unit in mm

TOSHIBA 11−5B2

Weight: 0.26 g

UL Recognized E67349 *1 E152349 *1

BSI Approved 7426, 7427 *2 7426, 7427 *2

*

1 UL1577

*2 BS EN60065: 2002, BS EN60950-1: 2002

PIN CONFIGURATION (TOP VIEW)

TLP627

1

2

1: ANODE
2: CATHODE
3: EMITTER
4:COLLECTOR

4

3

TLP627-2

1

2

3

4 5

1,3: ANODE
2,4: CATHODE
5,7: EMITTER
6,8:COLLECTOR

8

1

2

7

6

3

4

5

6

7

8

1,3,5,7 : ANODE
2,4,6,8 : CATHODE
9,11,13,15 : EMITTER
10,12,14,16 :COLLECTOR

TLP627-4

16

15

14

13

12

11

10

9

TOSHIBA 11−10C4

Weight: 0.54 g

TOSHIBA 11−20A3

Weight: 1.1 g

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TLP627,TLP627-2,TLP627-4

Absolute Maximum Ratings

(Ta=25°C)

RATING

CHARACTERISTIC SYMBOL

Forward Current I

TLP627

F

60 50 mA

TLP627-2
TLP627-4

UNIT

Forward Current Derating ∆IF /°C −0.7(Ta≥39°C) −0.5(Ta≥25°C) mA /°C

Pulse Forward Current I

Power Dissipation (1 Circuit) P

LED

FP

D

1(100μs pulse,100pps) A

100 70 mW

Power Dissipation Derating (Ta≥25°C,1 Circuit) ∆ PD /°C -1.0 -0.7 mW /°C

Reverse Voltage VR 5 V

Junction Temperature Tj 125 °C

Collector-Emitter Voltage V

Emitter -Collector Voltage V

Collector Current I

CEO

ECO

C

300 V

0.3 V

150 mA

Collector Power Dissipation (1 Circuit) PC 150(*300) 100 mW

DETECTOR

Collector Power Dissipation Derating (Ta≥25°C,1 Circuit) ∆ Pc /°C

Junction Temperature T

Operating Temperature Range T

Storage Temperature Range T

Lead Soldering Temperature (10s) T

j

opr

stg

sold

-1.5(*-3.5) -1.0 mW /°C

125 °C

−55~100 °C

−55~125 °C

260(10sec) °C

Total Package Power Dissipation PT 250(*320) 150 mW

Total Package Power Dissipation Derating (Ta≥25°C,1 Circuit) ∆ PT/°C -2.5(*-3.2) -1.5 mW /°C

Isolation Voltage (AC,1min. , R.H.≤60%) (Note1) BV

S

5000 V rm s

*IF=20mA Max

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

(Note1)Device considered a two terminal device : LED side pins Shorted together and

together.

DETECTOR side pins shorted

Recommended Operating Conditions

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT

Supply Voltage V

CC

Forward Current IF — 16 25 mA

Collector Current I

Operating Temperature T

C

opr

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

— — 200 V

— — 120 mA

−25 — 85 °C

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TLP627,TLP627-2,TLP627-4

Individual Electrical Characteristics

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Forward Voltage V

Reverse Current IR VR = 5 V — — 10 μA

LED

Capacitance C

Collector-Emitter
Breakdown Voltage

Emitter-Collector

Breakdown Voltage

Collector Dark Current I

DETECTOR

Capacitance Collector

to Emitter

V

(BR)CEO

V

(BR)ECO

C

IF = 10 mA 1.0 1.15 1.3 V

F

V = 0 , f=1MHz — 30 — pF

T

IC = 0.1mA 300 — — V

IE = 0.1mA 0.3 — — V

VCE = 200V — 10 200 nA

CEO

V

= 200V , Ta = 85°C — — 20 μA

CE

V=0 , f=1MHz — 10 — pF

CE

(Ta=25°C)

Coupled Electrical Characteristics

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Current Transfer Ratio IC/I

Saturated CTR IC/IF(sat) IF=10mA , VCE=1V 500 — — %

Collector-Emitter

Saturation Voltage

V

CE

F

(sat)

(Ta=25°C)

IF=1mA , VCE=1V 1000 4000 — %

IC=10mA , IF=1mA — — 1.0

IC=100mA , IF=10mA

0.3

—

1.2

V

Isolation Electrical Characteristics

(Ta=25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Capacitance Input to Output C

Isolation Resistance RS V

Isolation Voltage BVs

S

VS=0 , f=1MHz — 0.8 — pF

=500V , R.H.≤60% 5×10

S

AC, 1minute 5000 — —

AC, 1second, in oil — 10000 —

DC, 1 minute, in oil — 10000 — Vdc

10

1014 — Ω

Vrms

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