Toshiba TLP550 Technical data

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TOSHIBA Photocoupler Infrared LED + Photo IC
TLP550
Line Receiver Feedback Control
Power Supply Control
Switching Power Supply
Transistor Inverter
TLP550 constructs a high emitting diode and a one chip photo diode transistor. TLP550 has no base connection, and is suitable for application at noisy environmental condition. This unit is 8lead DIP package.
z Isolation voltage: 2500 Vrms (min.) z Switching speed: t z TTL compatible z UL recognized: UL1577, file No. E67349
pHL, tpLH
= 0.5μs (typ.)(RL=1.9 kΩ)
Pin Configuration
TOSHIBA 11−10C4
Weight: 0.54 g (typ.)
(top view)
TLP550
Unit in mm
1
2
3
4
8
7
6
5
1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. 5 : Emitter 6 : Collector 7 : N.C. 8 : Cathode
Schematic
I
CC
V
I
F
2
V
F
3
CC
8
I
O
V
O
6
GND
5
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TLP550
Current Transfer Ratio
Current Transfer Ratio (%)
Classification
(IC/IF)
Marking of Classification
MIN MAX
(None) 10 Blank, O, Y
Rank O 19 O
Rank Y 35 Y
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current (Note 1) I
Pulse forward current (Note 2) I
Peak transient forward current (Note 3)
LED
Reverse voltage V
Diode power dissipation (Note 4)
Output current I
Peak output current I
Supply voltage V
Output voltage V
Detector
Output power dissipation (Note 5)
Operating temperature range T
Storage temperature range T
Lead solder temperature (10s) T
Isolation voltage (AC, 1min., R.H. = 40~60%) (Note 6)
I
FPT
P
OP
P
BV
FP
CC
opr
stg
sol
F
R
D
O
O
O
S
25 mA
50 mA
1 A
5 V
45 mW
8 mA
16 mA
0.5~15 V
0.5~15 V
100 mW
55~100 °C
55~125 °C
260 °C
2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/
“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
(Note 1) Derate 0.8mA above 70°C.
(Note 2) 50% duty cycle, 1ms pulse width. Derate 1.6mA / °C above 70°C.
(Note 3) Pulse width 1μs, 300pps.
(Note 4) Derate 0.9mW / °C above 70°C.
(Note 5) Derate 2mW / °C above 70°C.
2007-10-01 2
TLP550
)
)
Electrical Characteristics
Characteristic Symbol Test condition Min. Typ. Max. Unit
Forward voltage V
Forward voltage temperature coefficient
LED
Reverse current I
Capacitance between terminal
High level output current
Detector
High level supply voltage
Current transfer ratio IO / I
Low level output
Coupled
voltage
Isolation resistance R
Capacitance between input to output
Switching Characteristics
(Ta = 25°C)
F
/ΔTa IF = 16 mA 2 mV / °C
ΔV
F
R
C
T
I
OH (1)
I
OH (2)
I
OH
I
CCH
V
OL
S
C
S
(Ta = 25°C)
IF = 16 mA 1.45 1.65 1.85 V
VR = 5 V 10 μA
VF = 0, f = 1MHz 60 pF
IF = 0 mA, VCC = VO = 5.5 V 3 500 nA
IF = 0 mA, VCC = VO = 15 V 5 μA
IF = 0 mA, VCC = VO = 15 V Ta = 70°C
IF = 0 mA, VCC = 15 V 0.01 1 μA
Ta = 25°C 10 30
Rank : 0 19 30
Rank : Y 35 50
Ta = 0~70°C 5
F
IF = 16 mA
= 4.5 V
V
CC
= 0.4 V
V
O
Rank : 0, Y 15
IF = 16 mA, VCC = 4.5 V
= 1.1 mA
I
O
(rank 0: I
R.H. = 40~60%, V = 1kV DC (Note 6)
= 2.4mA)
O
V = 0, f = 1MHz 0.8 pF
50 μA
%
0.4 V
12
10
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Propagation delay time (H L)
t
pHL
IF = 0 16 mA, VCC = 5V, RL = 4.1 k 0.3 0.8
(Note 7) Rank 0: RL = 1.9 k 0.5 0.8
Propagation delay time (L H)
Common mode transient immunity at high output level
Common mode transient immunity at low output level
t
C
C
pLH
MH
ML
IF = 16 0 mA, VCC = 5V, RL = 4.1 k 1.0 2.0
(Note 7) Rank 0: R
IF = 0 mA, VCM = 200 V
RL = 4.1 k (rank 0: RL = 1.9 kΩ)
pp
= 1.9 k 0.6 1.2
L
1500 V /μs
(Note 8
IF = 16 mA, VCM = 200 V
RL = 4.1 k (rank 0: RL = 1.9 kΩ)
pp
― −1500 V /μs
(Note 8
(Note 6) Device considered twoterminal device: Pins 1, 2, 3 and 4 shorted together and pin 5, 6, 7 and 8 shorted together.
μs
μs
2007-10-01 3
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