TOSHIBA TLP541G, TLP542G Technical data

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TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor
TLP541G,TLP542G
TLP541G, TLP542G
Programmable Controllers
ACOutput Module
The TOSHIBA TLP541G consists of a photothyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package. The TOSHIBA TLP542G consists of a photothyristor optically coupled to a gallium arsenide infrared emitting diode in a seven lead plastic DIP package.
Peak off-state voltage: 400 V (min.)
Trigger LED current: 7 mA (max.)
On-state current: 150 mA (max.)
Isolation voltage: 2500 V
UL recognized: UL1577, file no. E67349
Pin Configuration
(min.)
rms
(top view)
Unit in mm
TOSHIBA 11−7A8
Weight: 0.4 g
TOSHIBA 11−10C5
Weight: 0.53 g
1
2002-09-25
TLP541G, TLP542G
Maximum Ratings
Forward current IF 70 mA
Forward current derating (Ta 25°C) ΔIF / °C 0.7 mA / °C
Peak forward current (100 μs pulse, 100 pps) IFP 1 A
LED
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Peak forward voltage (RGK = 27k) V
Peak reverse voltage (RGK = 27k) V
Onstate current I
Onstate current derating (Ta 25°C) ΔIT / °C 2.0 mA / °C
Detector
Peak one cycle surge current I
Peak reverse gate voltage VGM 5 V
Junction temperature Tj 100 °C
Storage temperature range T
Operating temperature range T
Lead soldering temperature (10 s) T
Isolation voltage (AC, 1 min., R.H. 60%) (Note) BVS 2500 V
(Ta = 25°C)
Characteristic Symbol Rating Unit
400 V
DRM
400 V
RRM
150 mA
T (RMS)
2 A
TSM
55~125 °C
stg
30~100 °C
opr
260 °C
sol
rms
(Note) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VAC 120 V
Forward current IF 10 16 25 mA
Operating temperature T
Gate to cathode resistance RGK 27 33 k
Gate to cathode capacity CGK 0.01 0.1 μF
30
opr
85 °C
ac
2
2002-09-25
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