TOSHIBA TLP531, TLP532 Technical data

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TOSHIBA Photocoupler GaAs IRed & Photo−Transistor

TLP531,TLP532

TLP531,TLP532

Programmable Controllers

AC / DC−Input Module

Solid State Relay

The TOSHIBA TLP531 and TLP532 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
TLP532 is no−base internal connection for high−EMI environments.

· Collector−emitter voltage: 55 V (min.)

· Current transfer ratio: 50% (min.)

Rank GB: 100% (min.)

· Isolation voltage: 2500 V

· UL recognized: UL1577, file no. E67349

Pin Configurations

(min.)

rms

(top view)

Unit in mm

TOSHIBA 11−7A8

Weight: 0.4g

1

2002-09-25

TLP531,TLP532

Maximum Ratings

Forward current IF 70 mA

Forward current derating (Ta ≥ 50°C) ∆IF / °C 0.93 mA / °C

Peak forward current (100 µs pulse, 100pps) IFP 1 A

LED

Reverse voltage VR 5 V

Junction temperature Tj 125 °C

Collector-emitter voltage V

Collector-base voltage (TLP531) V

Emitter-collector voltage V

Emitter-base voltage (TLP531) V

Collector current IC 50 mA

Detector

Power dissipation PC 150 mW

Power dissipation derating (Ta ≥ 25°C) ∆PC / °C -1.5 mW / °C

Junction temperature Tj 125 °C

Storage temperature range T

Operating temperature range T

Lead soldering temperature (10s) T

Total package power dissipation PT 250 mW

Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C -2.5 mW / °C

Isolation voltage (AC, 1min., R.H.≤ 60%) BVS 2500 V

(Ta = 25°C)

Characteristic Symbol Rating Unit

55 V

CEO

80 V

CBO

7 V

ECO

7 V

EBO

-55~125 °C

stg

-55~100 °C

opr

260 °C

sol

rms

Recommends Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 24 V

Forward current IF ― 16 25 mA

Collector current IC ― 1 10 mA

Operating temperature T

-25 ― 85 °C

opr

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2002-09-25

TLP531,TLP532

Individual Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10mA 1.0 1.15 1.3 V

Reverse current IR V

LED

Capacitance CT V = 0, f = 1MHz ― 30 ― pF

Collector-emitter
breakdown voltage

Emitter-collector
breakdown voltage

Collector-base
breakdown voltage (TLP531)

Emitter-base

Detector

breakdown voltage (TLP531)

Collector dark current I

Capacitance (collector to emitter) CCE V = 0, f = 1MHz ― 10 ― pF

V

(BR) CEOIC

V

(BR) ECOIE

V

(BR) CBOIC

V

(BR) EBOIE

CEO

Coupled Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit

(Ta = 25°C)

R

VCE = 24V ― 10 100 nA

V

CE

(Ta = 25°C)

= 5V ― ― 10 µA

= 0.5mA 55 ― ― V

= 0.1mA 7 ― ― V

= 0.1mA 80 ― ― V

= 0.1mA 7 ― ― V

= 24V, Ta = 85°C ― 2 50 µA

Current transfer ratio IC / IF

Collector-emitter
saturation voltage

V

CE (sat)

= 5mA, VCE = 5V

I

F

Rank Y

Rank YG

Rank GR

Rank GB

Rank BL

IC = 2.4mA, IF = 8mA ― ― 0.4 V

50 200 600

50 ― 150

50 ― 300

100 ― 300

100 ― 600

200 ― 600

%

3

2002-09-25