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2
TLP523,TLP523−2,TLP523−4
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP523, TLP523−2, TLP523−4
Programmable Controllers
DC−Output Module
Solid State Relay
The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide
infrared emitting diode coupled with a silicon, darlington connected,
phototransistor which has an integral base−emitter resistor to optimize
switching speed and elevated temperature characteristics.
The TLP523−2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP523−4 provide four isolated channels per
package.
• Current transfer ratio: 500% (min.) (I
• Isolation voltage: 2500 Vrms (min.)
• Collector−emitter voltage: 55 V (min.)
• Leakage current: 10μA (max.) (Ta = 85°C)
• UL recognized: UL1577, file no. E67349
Pin Configurations
(top view)
= 1 mA)
F
Unit in mm
TOSHIBA 11−5B2
Weight: 0.26 g
TLP523
1
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
TLP523-2
1
4
2
3
3
4
8
7
6
5
1
2
3
4
TLP523-4
16
15
14
13
TOSHIBA 11−10C4
Weight: 0.54 g
1, 3 : Anode
2, 4 : Cathode
5, 7 : Emitter
6, 8 : Collector
5
6
7
8
1, 3, 5, 7
2, 4, 6, 8
9, 11, 13, 15
10, 12, 14, 16
: Anode
: Cathode
: Emitter
: Collector
12
11
10
9
TOSHIBA 11−20A3
Weight: 1.1 g
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2007-10-01
TLP523,TLP523−2,TLP523−4
Absolute Maximum Ratings
Characteristic Symbol
Forward current IF 60 50 mA
Forward current derating ΔIF /°C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA /°C
LED
Pulse forward current IFP 1 (100μs pulse, 100pps) A
Reverse voltage VR 5 V
Collector−emitter voltage V
Emitter−collector voltage V
Collector current IC 150 mA
Collector power dissipation
Detector
(1 circuit)
Collector power dissipation
derating (1 circuit (Ta ≥ 25°C))
Operating temperature range T
Storage temperature range T
Lead soldering temperature (10 s) T
Total power dissipation PT 250 150 mW
Total power dissipation derating
(Ta ≥ 25°C)
Isolation voltage (Note 1) BVS 2500 (AC, 1min., R.H.≤ 60%)
(Ta = 25°C)
Rating
TLP523
55 V
CEO
0.3 V
ECO
150 100 mW
P
C
/°C −1.5 −1.0 mW /°C
ΔP
C
−55~100 °C
opr
−55~125 °C
stg
260 °C
sol
/°C −2.5 −1.5 mW /°C
ΔP
T
TLP523−2
TLP523−4
Unit
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 20 mA
Operating temperature
range
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
−25
T
opr
― 85 °C
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2007-10-01
TLP523,TLP523−2,TLP523−4
t
t
Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V — — 10 μA
LED
Capacitance CT V = 0, f = 1 MHz
Collector−emitter
breakdown voltage
Collector dark current I
Detector
Capacitance collector
to emitter
Current transfer ratio IC / IF IF = 1 mA, VCE = 1 V 500
Collector−emitter
saturation voltage
Capacitance input
Coupled
to output
Isolation resistance RS VS = 500 V, R.H.≤ 60%
Switching Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
(Ta = 25°C)
V
(BR) CEO
CEO
C
CE
V
CE(sat)
C
(Ta = 25°C)
IC = 1 mA 55
VCE = 24 V
V = 0, f = 1 MHz
IC = 50 mA, IF = 10 mA —
VS = 0, f = 1 MHz
S
= 24 V, Ta = 85°C
V
CE
—
—
—
—
—
5×10
30 — pF
— —
10 200 nA
0.5 10 μA
10 — pF
2000 —
— 1
0.8 — pF
14
10
10
— Ω
V
%
V
Turn−on time t
Turn−off time t
Switching Time Test Circuit
IF
IF
ON
OFF
R
L
VCC = 10 V, RL = 180 Ω
= 16 mA
I
F
V
CC
I
F
— 3 — μs
— 80 — μs
OFF
V
CE
VCE
9V
1V
ON
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2007-10-01
TLP523,TLP523−2,TLP523−4
100
80
IF – Ta
200
160
TLP523
PC – Ta
(mA)
F
I
Allowable forward current
5000
3000
(mA)
1000
FP
500
300
100
Pulse forward current I
TLP523
60
TLP523 -2, -4
40
20
0
-20
50
30
10
20 40 0
Ambient temperature Ta (℃)
IFP – DR
3
10-3 3
Duty cycle patio DR
80 60
Pulse width ≤ 100μs
Ta = 25 ℃
3
10-1 10-2 3 100
(mW)
C
120
TLP523 -2, -4
80
dissipation P
Allowable collector power
40
0
120 100
-20
20 40 0
80 60
120 100
Ambient temperature Ta (℃)
IF – VF
1.0 1.2
Forward voltage V
F
1.4
(V)
1.6
1.8
(mA)
Forward current I
100
Ta = 25 ℃
50
30
10
F
5
3
1
0.5
0.3
0.1
0.6
0.8
/ Δ
ΔV
-3.2
-2.8
-2.4
-2.0
/ ΔTa ( m V / ℃)
F
-1.6
-1.2
F
Ta – I
F
Forward voltage temperature
-0.8
coefficient ΔV
-0.4
0.1 0.3 1 3 10 30
Forward current IF (mA)
1000
(mA)
FP
Pulse forward current I
500
300
100
50
30
10
IFP – VFP
5
3
1
0.6
1.0 1.4 1.8 2.2 2.6
Pulse forward voltage V
Pulse width ≤ 10μs
Repetitive frequency = 100Hz
Ta = 25 ℃
FP
3
(V)
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2007-10-01
TLP523,TLP523−2,TLP523−4
300
V
= 1V
CE
Ta = 25°C
IC – IF
300
VCE = 1.2V
Ta = 25 °C
IC – IF
(mA)
C
Collector current I
(sat) (V)
CE
100
Sample 1
50
30
10
5
3
1
0.3
Test condition
A : IC=100mA, IF=10mA
B : IC=50mA, IF=10mA
C : IC=10mA, IF=1mA
D : IC=1mA, IF=0.5mA
1.6
1.4
1.2
1.0
0.8
0.6
2
3
1
3 10 30
Forward current I
V
Test condition A
CE(sat)
– Ta
F
(mA)
B
C
D
(mA)
C
Collector current I
(mA)
C
Collector current I
100
Sample 1
50
30
10
5
3
1
0.3
Test condition
A : IF =10mA, VCE=1.2V
B : IF =10mA, VCE=1.0V
C : IF =2mA, VCE=1.2V
D : IF =2mA, VCE=1.0V
E : IF =1mA, VCE=1.2V
F : IF =1mA, VCE=1.0V
140
120
100
80
60
2
3
1
3 10 30
Forward current I
I
– Ta
C
(mA)
F
Test condition
A
B
0.4
Collector-emitter saturation voltage V
0.2
0
10080 60 40 0 20 -20 -40
Ambient temperature Ta (℃)
40
20
0
Ambient temperature Ta (℃)
5
C
D
E
F
1008060 40 0 20 -20-40
2007-10-01
TLP523,TLP523−2,TLP523−4
3
0.5
0 30
t
t
500
300
Sample 1
100
50
30
(mA)
C
10
5
3
2
3
PC Max.
300
PC Max.
100
50
30
(mA)
C
10
5
3
IC – VCE
IC – VCE
IF = 10mA
2mA
1mA
0.5mA
Ta = 25 ℃
Collector current I
1
0.5
0.3
0.1
1 10 30
3 0.3 0.1
Collector-emitter voltage V
CE
I
= 1mA
F
Ta = 25 ℃
(V)
Switching Time
V
= 10V
Ta = 25 ℃
IF
500
300
100
50
30
Switching time (μs)
t
OFF(IF=10mA)
CC
OUT
IF
V
OUT
ON
t
OFF(I
=1mA)
F
t
ON(IF=1mA)
90%
10%
OFF
RL
V
Collector current I
1
0.5
0.3
0.1
0.8
Collector-emitter voltage V
2.0 0.40 1.2 2.4 3.2
1.6
CE
2.8
(V)
Safe Operating Area
500
300
1s※
1s※
100
50
(mA)
C
30
10
100ms※
100ms※
DC operating Ta=25℃
10ms※
10ms※
Collector current I
10
5
3
1
30 100 1k 3k 10k300
t
ON(I
=10mA)
F
Load resistance RL (Ω)
5
3
1
11
Collector-emitter voltage V
※ Single
nonrepetitive
pulse
Ta= 2 5℃
Ta= 6 0℃
(V)
CE
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2007-10-01
TLP523,TLP523−2,TLP523−4
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
20070701-EN
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-10-01
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