Toshiba TLP523, TLP523−2, TLP523−4 Technical data

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2

TLP523,TLP523−2,TLP523−4

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP523, TLP523−2, TLP523−4

Programmable Controllers

DC−Output Module

Solid State Relay

The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide
infrared emitting diode coupled with a silicon, darlington connected,
phototransistor which has an integral base−emitter resistor to optimize
switching speed and elevated temperature characteristics.
The TLP523−2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP523−4 provide four isolated channels per
package.

• Current transfer ratio: 500% (min.) (I

• Isolation voltage: 2500 Vrms (min.)

• Collector−emitter voltage: 55 V (min.)

• Leakage current: 10μA (max.) (Ta = 85°C)

• UL recognized: UL1577, file no. E67349

Pin Configurations

(top view)

= 1 mA)

F

Unit in mm

TOSHIBA 11−5B2

Weight: 0.26 g

TLP523

1

1 : Anode
2 : Cathode
3 : Emitter
4 : Collector

TLP523-2

1

4

2

3

3

4

8

7

6

5

1

2

3

4

TLP523-4

16

15

14

13

TOSHIBA 11−10C4

Weight: 0.54 g

1, 3 : Anode
2, 4 : Cathode

5, 7 : Emitter
6, 8 : Collector

5

6

7

8

1, 3, 5, 7
2, 4, 6, 8
9, 11, 13, 15
10, 12, 14, 16

: Anode
: Cathode
: Emitter
: Collector

12

11

10

9

TOSHIBA 11−20A3

Weight: 1.1 g

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TLP523,TLP523−2,TLP523−4

Absolute Maximum Ratings

Characteristic Symbol

Forward current IF 60 50 mA

Forward current derating ΔIF /°C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA /°C

LED

Pulse forward current IFP 1 (100μs pulse, 100pps) A

Reverse voltage VR 5 V

Collector−emitter voltage V

Emitter−collector voltage V

Collector current IC 150 mA

Collector power dissipation

Detector

(1 circuit)

Collector power dissipation
derating (1 circuit (Ta ≥ 25°C))

Operating temperature range T

Storage temperature range T

Lead soldering temperature (10 s) T

Total power dissipation PT 250 150 mW

Total power dissipation derating
(Ta ≥ 25°C)

Isolation voltage (Note 1) BVS 2500 (AC, 1min., R.H.≤ 60%)

(Ta = 25°C)

Rating

TLP523

55 V

CEO

0.3 V

ECO

150 100 mW

P

C

/°C −1.5 −1.0 mW /°C

ΔP

C

−55~100 °C

opr

−55~125 °C

stg

260 °C

sol

/°C −2.5 −1.5 mW /°C

ΔP

T

TLP523−2
TLP523−4

Unit

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted

together.

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC ― 5 24 V

Forward current IF ― 16 20 mA

Operating temperature
range

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

−25

T

opr

― 85 °C

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2007-10-01

TLP523,TLP523−2,TLP523−4

t

t

Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V

Reverse current IR VR = 5 V — — 10 μA

LED

Capacitance CT V = 0, f = 1 MHz

Collector−emitter
breakdown voltage

Collector dark current I

Detector

Capacitance collector
to emitter

Current transfer ratio IC / IF IF = 1 mA, VCE = 1 V 500

Collector−emitter
saturation voltage

Capacitance input

Coupled

to output

Isolation resistance RS VS = 500 V, R.H.≤ 60%

Switching Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit

(Ta = 25°C)

V

(BR) CEO

CEO

C

CE

V

CE(sat)

C

(Ta = 25°C)

IC = 1 mA 55

VCE = 24 V

V = 0, f = 1 MHz

IC = 50 mA, IF = 10 mA —

VS = 0, f = 1 MHz

S

= 24 V, Ta = 85°C

V

CE

—

—

—

—

—

5×10

30 — pF

— —

10 200 nA

0.5 10 μA

10 — pF

2000 —

— 1

0.8 — pF

14

10

10

— Ω

V

%

V

Turn−on time t

Turn−off time t

Switching Time Test Circuit

IF

IF

ON

OFF

R

L

VCC = 10 V, RL = 180 Ω

= 16 mA

I

F

V

CC

I

F

— 3 — μs

— 80 — μs

OFF

V

CE

VCE

9V

1V

ON

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2007-10-01