TLP283 and TLP283-4 is a very small and thin coupler,suitable
for surface mount assembly in applications such as on-board power
supplies,programmable controllers.
TLP283 and TLP283-4 consist of photo transistor,optically coupled
to a gallium arsenide infrared emitting diode.
Forward Current Derating ∆IF /°C −0.7 (Ta≥53°C)−0.5 (Ta≥25°C)mA /°C
Pulse Forward Current IFP 1 A
LED
Reverse Voltage VR 5 V
Junction Temperature Tj 125 °C
Collector-Emitter Voltage V
Emitter-Collector Voltage V
Collector Current IC 50 mA
Collector Power Dissipation
(1 Circuit)
DETECTOR
Collector Power Dissipation
Derating(Ta≥25°C) (1 Circuit)
Junction Temperature Tj 125 °C
Operating Temperature Range T
Storage Temperature Range T
Lead Soldering Temperature T
Total Package Power Dissipation
(1 Circuit)
Total Package Power Dissipation
Derating (Ta≥25°C) (1 Circuit)
Isolation Voltage (Note2) BVS 2500(AC,1min,R.H.≤60%)
(Ta = 25℃)
RATING
TLP283 TLP283−4
100 V
CEO
7 V
ECO
150 100 mW
P
C
/°C −1.5 −1.0 mW /°C
∆P
C
−55~100 °C
opr
−55~125 °C
stg
260 (10s) °C
sol
200 170 mW
P
T
/°C −2.0 −1.7 mW /°C
∆P
T
UNIT
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note2) Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted
Individual Electrical Characteristics
together.
(Ta = 25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX.UNIT
Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse Current IR VR = 5 V
LED
Capacitance CT V = 0, f = 1 MHz
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector Dark Current
DETECTOR
Capacitance
(Collector to Emitter)
(Note3)
V
(BR) CEO
V
(BR) ECO
IC = 0.5 mA 100
IE = 0.1 mA 7
VCE = 48 V,
Ambient Light Below
(100 ℓx)
I
CEO
C
CE
V
CE
Ambient Light Below
(100 ℓx)
V = 0, f = 1 MHz
= 48 V, Ta = 85°C
—
—
—
—
—
— 10 μA
30 — pF
— —
— —
0.01
(2)
(4)
10 — pF
0.1
(10)
2
50
(50)
(Note3) Because of the construction,leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
V
V
μA
μA
2007-10-01 2
TLP283,TLP283-4
Coupled Electrical Characteristics
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX.UNIT
Current Transfer Ratio IC / I
Saturated CTR IC / I
Collector-Emitter
Saturation Voltage
Off-State Collector Current I
Isolation Characteristics
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX.UNIT
Capacitance
(Input to Output)
Isolation Resistance R
Isolation Voltage BV
(Ta = 25℃)
Switching Characteristics
V
CE (sat) IC
C (off)
C
(Ta = 25℃)
(Ta = 25℃)
IF = 1 mA, VCE = 5 V 100
F
F (sat)
IF = 1 mA, VCE = 0.4 V 50 —
= 0.2 mA, IF = 1 mA
VF = 0.7 V, VCE = 48 V
VS = 0 V, f = 1 MHz — 0.8
S
VS = 500 V, R.H.≤60% 5×10
S
AC , 1 minute 2500 —
AC , 1 second,in OIL
S
DC , 1 minute, in OIL
400%
—
%
pF
Ω
Vrms
Vdc
—
—
—
10
—
—
—
0.2 0.4 V
10 μA
—
14
10
5000
5000
—
—
—
—
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX.UNIT
Turn-On Time t
Turn-Off Time t
1 Pulse delay time t
(Fig.1)SWITCHING TIME TEST CIRCUIT
ON
OFF
ON+ tOFF
VCC = 5 V, IF = 1 mA
= 10kΩ
R
L
—
—
—
7.5
70
80
20
90
100
μs
2007-10-01 3
TLP283,TLP283-4
100
(mA)
F
I
Allowable forward current
3000
1000
(mA)
500
FP
300
100
Pulse forward current I
-3.2
-2.8
-2.4
-2.0
-1.6
/ΔTa ( m V / ℃)
F
-1.2
ΔV
-0.8
Forward voltage temperature coefficient
-0.4
80
60
40
20
50
30
10
I
– Ta
F
TLP280
TLP280-4
0
20
0 -20-
Ambient temperature Ta (℃)
I
40
FP
60
– DR
80
PULSE WIDTH
Ta= 2 5℃
100
≦100μs
120
200
160
120
(mW)
C
80
Dissipation P
Allowable collector power
40
0
100
10
(mA)
F
1
TLP280
TLP280-4
20
0 -20
Ambient temperature Ta (℃)
PC – Ta
40
60
IF – VF
80
100℃
75℃
50℃
25℃
0℃
-25℃
-50℃
100
120
Forward current I
1000
500
300
(mA)
100
FP
Pulse forward current I
0.1
50
30
10
2.6
1.6
3.0
0.80.6
5
3
1
1.0 0.6
1.0
1.2
Forward voltage V
1.4
Pulse forward voltage V
I
– VFP
FP
Pulse width≦10μs
Repetitive
Frequency=100Hz
Ta= 2 5℃
1.8
(V)
F
2.2
FP
1.4
(V)
R
5
(mA)
F
1
−
10
100
3
50
30
10
3
3
0.3 0.1
0.5
3
−
Forward current I
2
−
10
10
3
/ΔTa– IF
F
1
3
Duty cycle ratio D
ΔV
*: The above graphs show typical characteristics.
2007-10-01 4
TLP283,TLP283-4
(mA)
C
Collector Current I
15
10
5
Ta =2 5 °C
IC-VCE
IF=0.5mA
IF=5.0mA
IF=4.0mA
IF=3.0mA
IF=2.0mA
IF=1.0mA
IC-VCE
(mA)
C
5
4
Ta =2 5 °C
IF=5.0mA
IF=4.0mA
IF=3.0mA
3
IF=2.0mA
2
IF=1.0mA
1
Collector Current I
IF=0.5mA
0510
Collector-Emitter Voltage V
IC-IF
100
(mA)
C
10
SAMPLE B
CE
(V)
1
V
= 5V
CE
V
= 0.4V
Collector Current I
SAMPLE A
0.1
CE
Ta= 2 5°C
0.1110100
Forward Current IF(mA)
1000
(%)
F
/I
C
SAMPLE B
IC/IF-IF
Ta= 2 5°C
V
= 5V
CE
V
= 0.4V
CE
00.20.40.60.81
Collector-Emitter Voltage VCE(V)
I
-Ta
CEO
10000
1000
V
= 48V
(nA)
CEO)
(I
D
I
Collector Dark Current
100
10
1
0.1
0 20406080100
Ambient Temperature Ta(°C)
CE
V
CE
V
CE
V
CE
= 24V
= 10V
= 5V
100
SAMPLE A
Current Transfer ratio I
10
0.1110100
Forward Current IF(mA)
*: The above graphs show typical characteristics.
2007-10-01 5
0.5
0.4
0.3
(mA)
0.2
CE(sat)
V
V
CE(sat)-Ta
IC=0.5mA
IC=0.2mA
0.1
Collector-Emitter Saturation Voltage
0
-40-200 20406080100
Ambient Temperature Ta(°C)
1000
(μs)
100
OFF
/t
ON
tON/t
IF = 1mA
VCC = 5V
10
OFF
-RL
t
OFF
tON
IF=1.0mA
(mA)
C
Collector Current I
(μs)
/t
1000
OFF
ON
TLP283,TLP283-4
IC-Ta
100
V
= 5V
CE
10
1
0.1
0.01
-40-20 0 20406080100
Ambient Temperature Ta(°C)
tON/t
OFF
IF = 1mA
VCC = 5V
RL = 10kΩ
100
10
t
OFF
tON
IF= 2.0mA
IF= 1.0mA
IF=0.5mA
IF=0.2mA
-Ta
Switching Time t
1
110100
Load Resistance RL(kΩ)
*: The above graphs show typical characteristics.
Switching Time t
1
-40-20 0 20406080100
Ambient Temperature Ta(°C)
2007-10-01 6
TLP283,TLP283-4
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
20070701-EN
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
2007-10-01 7
Loading...
+ hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.