TOSHIBA TLP283, TLP283-4 Technical data

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4

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP283,TLP283-4

PROGRAMMABLE CONTROLLERS

AC adapters for PDAs/ on-board power supplies

I/O interface boards

TLP283 and TLP283-4 is a very small and thin coupler,suitable
for surface mount assembly in applications such as on-board power
supplies,programmable controllers.
TLP283 and TLP283-4 consist of photo transistor,optically coupled
to a gallium arsenide infrared emitting diode.

z Collector-Emitter Voltage : 100 V (MIN)

z Current Transfer Ratio : 100% (MIN)@IF=1mA

z 1 Pulse delay time(Note 1)

z Isolation Voltage : 2500 Vrms (MIN)

z UL Recognized : UL1577 , File No. E67349

Note 1 : 1 Pulse delay time = tON+tOFF

: 100us(MAX)@IF=1mA,RL=10kΩ

Pin Configuration (Top view)

TLP283 TLP283-4

1

4

1

16

TOSHIBA 11-3A1

Weight: 0.05 g (typ.)

TLP283,TLP283-4

Unit in mm

TLP283

Unit in mm

TLP283-

2

1:ANODE
2:CATHODE
3:EMITTER
4:COLLECTOR

3

2

3

4

5

6

15

14

13

12

11

7 10

8 9

1,3,5,7 :ANODE
2,4,6,8 :CATHODE
9,11,13,15 :EMITTER
10,12,14,16 :COLLECTOR

TOSHIBA 11-10F1

Weight: 0.19 g (typ.)

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TLP283,TLP283-4

Absolute Maximum Ratings

CHARACTERISTIC SYMBOL

Forward Current IF 50 mA

Forward Current Derating ∆IF /°C −0.7 (Ta≥53°C) −0.5 (Ta≥25°C) mA /°C

Pulse Forward Current IFP 1 A

LED

Reverse Voltage VR 5 V

Junction Temperature Tj 125 °C

Collector-Emitter Voltage V

Emitter-Collector Voltage V

Collector Current IC 50 mA

Collector Power Dissipation

(1 Circuit)

DETECTOR

Collector Power Dissipation

Derating(Ta≥25°C) (1 Circuit)

Junction Temperature Tj 125 °C

Operating Temperature Range T

Storage Temperature Range T

Lead Soldering Temperature T

Total Package Power Dissipation
(1 Circuit)
Total Package Power Dissipation

Derating (Ta≥25°C) (1 Circuit)

Isolation Voltage (Note2) BVS 2500(AC,1min,R.H.≤60%)

(Ta = 25℃)

RATING

TLP283 TLP283−4

100 V

CEO

7 V

ECO

150 100 mW

P

C

/°C −1.5 −1.0 mW /°C

∆P

C

−55~100 °C

opr

−55~125 °C

stg

260 (10s) °C

sol

200 170 mW

P

T

/°C −2.0 −1.7 mW /°C

∆P

T

UNIT

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

(Note2) Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted

Individual Electrical Characteristics

together.

(Ta = 25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V

Reverse Current IR VR = 5 V

LED

Capacitance CT V = 0, f = 1 MHz

Collector-Emitter

Breakdown Voltage

Emitter-Collector

Breakdown Voltage

Collector Dark Current

DETECTOR

Capacitance
(Collector to Emitter)

(Note3)

V

(BR) CEO

V

(BR) ECO

IC = 0.5 mA 100

IE = 0.1 mA 7

VCE = 48 V,
Ambient Light Below
(100 ℓx)

I

CEO

C

CE

V

CE

Ambient Light Below
(100 ℓx)

V = 0, f = 1 MHz

= 48 V, Ta = 85°C

—

—

—

—

—

— 10 μA

30 — pF

— —

— —

0.01
(2)

(4)

10 — pF

0.1

(10)

2

50

(50)

(Note3) Because of the construction,leak current might be increased by ambient light.

Please use photocoupler with less ambient light.

V

V

μA

μA

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TLP283,TLP283-4

Coupled Electrical Characteristics

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Current Transfer Ratio IC / I

Saturated CTR IC / I

Collector-Emitter

Saturation Voltage

Off-State Collector Current I

Isolation Characteristics

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Capacitance
(Input to Output)

Isolation Resistance R

Isolation Voltage BV

(Ta = 25℃)

Switching Characteristics

V

CE (sat) IC

C (off)

C

(Ta = 25℃)

(Ta = 25℃)

IF = 1 mA, VCE = 5 V 100

F

F (sat)

IF = 1 mA, VCE = 0.4 V 50 —

= 0.2 mA, IF = 1 mA

VF = 0.7 V, VCE = 48 V

VS = 0 V, f = 1 MHz — 0.8

S

VS = 500 V, R.H.≤60% 5×10

S

AC , 1 minute 2500 —

AC , 1 second,in OIL

S

DC , 1 minute, in OIL

400 %

—

%

pF

Ω

Vrms

Vdc

—

—

—

10

—

—

—

0.2 0.4 V

10 μA

—

14

10

5000

5000

—

—

—

—

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Turn-On Time t

Turn-Off Time t

1 Pulse delay time t

(Fig.1)SWITCHING TIME TEST CIRCUIT

ON

OFF

ON+ tOFF

VCC = 5 V, IF = 1 mA

= 10kΩ

R

L

—

—

—

7.5

70

80

20

90

100

μs

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