TOSHIBA TLP2631 Technical data

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

TOSHIBA photocoupler GaAℓAs IRed & Photo IC

TLP2631

Isolated Line Receiver
Simplex / Multiplex Data Transmission
Computer-Peripheral Interface
Microprocessor System Iinterface
Digital Isolation For A / D, D / A Conversion

The TOSHIBA TLP2631 dual photocoupler consists of a pair of GaAℓAs
light emitting diode and integrated high gain, high speed photodetector.
This unit is 8-lead DIP.
The output of the detector circuit is an open collector, Schottky clamped
transistor.
A Faraday shield integrated on the photodetector chip reduces the effects
of capacitive coupling between the input LED emitter and the high gain
stages of the detector. This provides an effective common mode transient
immunity of 1000V / μs.

• Input current

• Switching speed: 10MBd(typ.)

• Common mode transient immunity: ±1000V / μs(min.)

• Guaranteed performance over temperature: 0~70°C

• Isolation voltage: 2500V

• UL recognized: UL1577, file no. E67349

Truth Table

threshold: I

= 5mA(max.)

F

(min.)

rms

(positive logic)

Pin Configuration (top view)

TLP2631

Unit in mm

TOSHIBA 11−10C4

Weight: 0.54g

Input Output

H L

L H

A 0.01 to 0.1μF bypass capacitor must

connected between pins 8 and 5(see Note 1).

1

2

3

4

Schematic

I

F1

1

+

V

F1

2

−

I

F2

4

+

V

F2

3

−

Shield

Shield

VCC

GND

1 : Anode 1

8

2 : Cathode 1

3 : Cathode 2

7

4 : Anode 2

5 : GND

6

6 : V

O2

7 : V

5

O1

8 : V

CC

ICC

(Output 2)

(Output 1)

8

V

I

O1

7

V

I

O2

6

V

5

GND

CC

O1

O2

1

2007-10-01

TLP2631

Absolute Maximum Ratings

Characteristic Symbol Rating Unit

Forward current (each channel) I

Pulse forward current

LED

(each channel)*

Reverse voltage (each channel) VR 5 V

Output current (each channel) I

Output voltage (each channel) VO −0.5~7 V

Supply voltage

(1 minute maximum)

Detector

Output collector power

dissipation (each channel)

Operating temperature range T

Storage temperature range T

Lead soldering temperature

(10s)**

Isolation voltage

(AC, 1 min., R.H.≤ 60%, Note 3)

(no derating required up to 70°C)

F

I

30 mA

FP

O

V

7 V

CC

P

40 mW

O

−55~125 °C

stg

−40~85 °C

opr

T

260 °C

sol

BV

2500 Vrms

S

20 mA

16 mA

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

* t ≤ 1 msec duration.
** 2mm below seating plane.

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Input current, low level, each channel IFL 0 ― 250 μA

Input current, high level, each channel IFH 6.3* ― 20 mA

Supply voltage**, output VCC 4.5 5 5.5 V

Fan out (TTL load, each channel) N ― ― 8

Operating temperature T

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

0 ― 70 °C

opr

*6.3mA is a guard banded value which allows for at least 20% CTR degradation.

Initial input current threshold value is 5.0mA or less.

**This item denotes operating ranges, not meaning of recommended operating conditions.

2

2007-10-01

Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ. * Max. Unit

Input forward voltage
(each channel)

(Ta = 0~70°C unless otherwise noted)

IF = 10mA, Ta = 25°C ― 1.65 1.75 V

V

F

TLP2631

Input diode temperature
coefficient (each channel)

Input reverse breakdown
voltage (each channel)

Input capacitance
(each channel)

High level output current
(each channel)

Low level output voltage
(each channel)

High level supply current
(both channels)

Low level supply current
(both channels)

Isolation voltage RS VS = 500V, R.H. ≤ 60% (Note 3) 5×1010 1014 ― Ω

Capacitance (input−output) CS f = 1MHz (Note 3) ― 0.6 ― pF

Input−input leakage
current

Resistance (input−input) R

Capacitance (input−input) C

* All typical values are at V

= 5V, Ta = 25°C.

CC

/ ΔTa IF = 10mA ― −2.0 ― mV / °C

ΔV

F

IR = 10μA, Ta = 25°C 5 ― ― V

BV

R

VF = 0, f = 1MHz ― 45 ― pF

C

T

= 5.5V, VO = 5.5V

V

CC

I

OH

V

OL

V

I

CCH

V

I

CCL

I

I−I

V

I−I

f = 1MHZ (Note 6) ― 0.25 ― pF

I−I

= 250μA

I

F

= 5.5V, IF = 5mA

V

CC

(sinking) = 13mA

I

OL

= 5.5V, IF = 0 ― 14 30 mA

CC

= 5.5V, IF = 10mA ― 24 38 mA

CC

R.H. ≤ 60%, t = 5s

= 500V (Note 6)

V

I−I

= 500V (Note 6) ― 1011 ― Ω

I−I

― 1 250 μA

― 0.4 0.6 V

― 0.005 ― μA

3

2007-10-01