TOSHIBA TLP2630 Technical data

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TOSHIBA Photocoupler GaAℓAs Ired & Photo IC

TLP2630

Digital Logic Isolation

Tele−Communication

Analog Data Equipment Control

Microprocessor System Interface

The TOSHIBA TLP2630 dual photocoupler consists of a
pair of GaAℓAs light emitting diode and integrated high
gain, high speed photodetector.
The output of the detector circuit is an open collector,
schottky clamped transistor.This unit is 8−lead DIP.

• Input current threshold: I

• LSTTL/TTL compatible: 5V supply

• Switching speed: 10MBd(typ.)

• Guaranteed performance over temperature: 0~70°C

• Isolation voltage: 2500V

• UL recognized:UL1577, file no. E67349

Truth Table
(positive logic)

= 5mA(max.)

F

(min.)

rms

Pin Configuration

1

2

3

4

Schematic

TLP2630

TOSHIBA 11−10C4

Weight: 0.54 g

(top view)

V

CC

GND

1: Anode 1

8

2: Cathode 1

3: Cathode 2

7

4: Anode 2

5: GND

6

6: V

O2

7: V

5

O1

8: V

CC

(output 2)

(output 1)

Unit in mm

Input Output

H L

L H

A 0.01 to 0.1μF bypass capacitor must
connected between pins 8 and 5 (see Note 1).

I

F1

1

+

V

F1

2

­I

F2

4

+

V

F2

3

-

ICC

8

V

I

O1

O2

7

6

5

CC

V

O1

V

O2

GND

I

1

2007-10-01

TLP2630

Absolute Maximum Ratings

Characteristic Symbol Rating Unit

Forward current(each channel) I

Pulse forward current

LED

(each channel)*

Reverse voltage(each channel) VR 5 V

Output current(each channel) I

Output voltage(each channel) VO −0.5~7 V

Supply voltage
(1 minute maximum)

Detector

Output collector power
dissipation(each channel)

Operating temperature range T

Storage temperature range T

Lead soldering temperature (10 s)
(Note 1)

Isolation voltage
(AC, 1 min., R.H.≤ 60%, Note 3)

(no derating required up to 70°C)

F

30 mA

I

FP

O

7 V

V

CC

40 mW

P

O

−55~125 °C

stg

−40~85 °C

opr

260 °C

T

sol

2500 Vrms

BV

S

20 mA

16 mA

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

* t ≤ 1 msec duration.

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Input current, low level, each channel IFL 0 ⎯ 250 μA

Input current, high level, each channel IFH 6.3* ⎯ 15 mA

Supply voltage**, output VCC 4.5 5 5.5 V

Fan out(TTL load, each channel) N ⎯ ⎯ 8

Operating temperature T

opr

0 ⎯ 70 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

* 6.3mA is a guard banded value which allows for at least 20% CTR degradation.

Initial input current threshold value is 5.0mA or less.

**This item denotes operating ranges, not meaning of recommended operating conditions.

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2007-10-01

TLP2630

Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ.* Max. Unit

Input forward voltage
(each channel)

Input diode temperature
coefficient(each channel)

Input reverse breakdown
voltage(each channel)

Input capacitance
(each channel)

High level output current
(each channel)

Low level output voltage
(each channel)

High level supply current
(both channels)

Low level supply current
(both channels)

Isolation voltage

Capacitance(input−output)

Input−input leakage
current

Resistance(input−input)

Capacitance(input−input)

(Ta = 0~70°C, unless otherwise noted)

V

ΔV

F

BV

C

I

OH

V

I

CCH

I

CCL

R

C

I

R

C

F

/ ΔTa

R

T

OL

S

S

I−I

I−I

I−I

= 10mA, Ta = 25°C

I

F

= 10mA

I

F

= 10μA, Ta = 25°C

I

R

= 0, f = 1MHz

V

F

= 5.5V, VO = 5.5V

V

CC

I

= 250μA

F

= 5.5V, IF = 5mA

V

CC

(sinking) = 13mA

I

OL

= 5.5V, IF = 0

V

CC

= 5.5V, IF = 10mA

V

CC

= 500V, R.H.≤ 60% (Note 3)

V

S

f = 1MHz (Note 3)

R.H.≤ 60%, t = 5s

= 500V (Note 6)

V

I−I

= 500V (Note 6)

V

I−I

f = 1MHz (Note 6)

⎯ 1.65 1.75 V

⎯ −2.0 ⎯ mV / °C

5 ⎯ ⎯ V

⎯ 45 ⎯ pF

⎯ 1 250 μA

⎯ 0.4 0.6 V

⎯ 14 30 mA

⎯ 24 36 mA

14

⎯ 10

⎯ 0.6 ⎯ pF

⎯ 0.005 ⎯ μA

⎯ 10

⎯ 0.25 ⎯ pF

⎯ Ω

11

⎯ Ω

* All typical values are at V

= 5V, Ta = 25°C.

CC

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2007-10-01