TOSHIBA TLP2601 Technical data

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TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC

TLP2601

Isolated Line Receiver

Simplex / Multiplex Data Transmission

Computer−Peripheral Interface

Microprocessor System Interface

Digital Isolation For A/D, D/A Conversion

Direct Replacement For HCPL−2601

The TOSHIBA TLP2601 a photocoupler which combines a GaAℓAs IRed
as the emitter and an integrated high gain, high speed photodetector.
The output of the detector circuit is an open collector, Schottky clamped
transistor.
A Faraday shield integrated on the photodetector chip reduces the effects
of capacitive coupling between the input LED emitter and the high gain
stages of the detector. This provides an effective common mode transient
immunity of 1000V/μs.

• Input current thresholds: I

• Isolation voltage: 2500Vrms min.

• Switching speed: 10MBd

• Common mode transient immunity: 1000V/μs min.

• Guaranteed performance over temp.: 0°C~70°C

• UL Recognized: UL1577, file No. E67349

Truth Table

(positive logic)

Input Enable Output

H H L

L H H

H L H

L L H

A 0.01 to 0.1μF bypass capacitor must be
connected between pins 8 and 5 (see Note 1).

= 5mA max.

F

Schematic

2

+

V

F

3

-

TOSHIBA 11−10C4

Weight: 0.54g

Pin Configuration

1

2

3

4

SHIELD

I

F

SHIELD

I

E

7

V

E

TLP2601

Unit in mm

(top view)

8

7

6

5

I

CC

V

I

O

CC

8

V

O

6

GND

5

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Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Input current, low level IFL 0 ⎯ 250 μA

Input current, high level IFH 6.3 (*) ⎯ 20 mA

Supply voltage**, output VCC 4.5 ⎯ 5.5 V

High level enable voltage VEH 2.0 ⎯ VCC V

Low level enable voltage VEL 0 ⎯ 0.8 V

Fan out (TTL load) N ⎯ ⎯ 8 ⎯

TLP2601

Operating temperature T

0 ⎯ 70 °C

opr

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

(*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation.

Initial input current threshold value is 5.0mA or less.

**This item denotes operating ranges, not meaning of recommended operating conditions.

Absolute Maximum Ratings

Characteristic Symbol Rating Unit

Forward current I

LED

Reverse voltage VR 5 V

Output current I

Output voltage VO −0.5~7 V

Supply voltage

(1 minute maximum)

Detector

Enable input voltage

(not to exceed V

Output collector power dissipation Po 40 mW

Operating temperature range T

Storage temperature range T

Lead solder temperature (10s) (**) T

Isolation voltage

(R.H.≤ 60%,AC 1min., (Note 10)

by more than 500mV)

CC

(no derating required)

F

O

V

CC

V

5.5 V

E

opr

stg

260 °C

sol

BV

S

20 mA

25 mA

7 V

−40~85 °C

−55~125 °C

2500 Vrms

3540 V

dc

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

(**) 1.6mm below seating plane.

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TLP2601

Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit

High level output current IOH

Low level output voltage VOL

High level supply current I

Low level supply current I

Low level enable current IEL VCC = 5.5V, VE = 0.5V ⎯ −1.6 −2.0 mA

High level enable current IEH VCC = 5.5V, VE = 2.0V ⎯ −1 ⎯

High level enable voltage VEH (Note 11) 2.0 ⎯ ⎯

Low level enable voltage VEL ⎯ ⎯ ⎯ 0.8

Input forward voltage VF IF = 10mA, Ta = 25℃ ⎯ 1.65 1.75 V

Input reverse breakdown

voltage

(Ta = 0°C ~70°C unless otherwise noted)

V

= 5.5V, VO = 5.5V

CC

= 250μA, VE = 2.0V

I

F

V

= 5.5V, IF = 5mA

CC

= 2.0V, IOL(sinking) = 13mA

V

E

VCC = 5.5V, IF = 0, VE = 0.5V ⎯ 7 15 mA

CCH

V

= 5.5V, IF = 10mA

CC

CCL

IR = 10μA, Ta = 25℃ 5 ⎯ ⎯ V

BV

R

V

E

= 0.5V

⎯ 1 250 μA

⎯ 0.4 0.6 V

⎯ 12 19 mA

mA

V

Input capacitance CIN VF = 0, f = 1MHz ⎯ 45 ⎯ pF

Input diode temperature

coefficient

Input−output insulation

leakage current

Resistance (input−output) R

Capacitance (input−output) C

/ΔTA IF = 10mA ⎯ −2.0 ⎯ mV / °C

ΔV

F

Relative humidity = 45%

I

I−O

I−O

I−O

Ta=25℃, t = 5 second

= 3000Vdc, (Note 10)

V

I−O

V

= 500V, R.H.≤ 60%

I−O

(Note 10)

f = 1MHz, (Note 10) ⎯ 0.6 ⎯ pF

⎯ ⎯ 1 μA

5×10

10

10

14

⎯ Ω

(**)All typ.values are at VCC = 5V, Ta = 25°C.

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