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TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC
TLP2601
Isolated Line Receiver
Simplex / Multiplex Data Transmission
Computer−Peripheral Interface
Microprocessor System Interface
Digital Isolation For A/D, D/A Conversion
Direct Replacement For HCPL−2601
The TOSHIBA TLP2601 a photocoupler which combines a GaAℓAs IRed
as the emitter and an integrated high gain, high speed photodetector.
The output of the detector circuit is an open collector, Schottky clamped
transistor.
A Faraday shield integrated on the photodetector chip reduces the effects
of capacitive coupling between the input LED emitter and the high gain
stages of the detector. This provides an effective common mode transient
immunity of 1000V/μs.
• Input current thresholds: I
• Isolation voltage: 2500Vrms min.
• Switching speed: 10MBd
• Common mode transient immunity: 1000V/μs min.
• Guaranteed performance over temp.: 0°C~70°C
• UL Recognized: UL1577, file No. E67349
Truth Table
(positive logic)
Input Enable Output
H H L
L H H
H L H
L L H
A 0.01 to 0.1μF bypass capacitor must be
connected between pins 8 and 5 (see Note 1).
= 5mA max.
F
Schematic
2
+
V
F
3
-
TOSHIBA 11−10C4
Weight: 0.54g
Pin Configuration
1
2
3
4
SHIELD
I
F
SHIELD
I
E
7
V
E
TLP2601
Unit in mm
(top view)
8
7
6
5
I
CC
V
I
O
CC
8
V
O
6
GND
5
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2007-10-01
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Input current, low level IFL 0 ⎯ 250 μA
Input current, high level IFH 6.3 (*) ⎯ 20 mA
Supply voltage**, output VCC 4.5 ⎯ 5.5 V
High level enable voltage VEH 2.0 ⎯ VCC V
Low level enable voltage VEL 0 ⎯ 0.8 V
Fan out (TTL load) N ⎯ ⎯ 8 ⎯
TLP2601
Operating temperature T
0 ⎯ 70 °C
opr
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
(*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation.
Initial input current threshold value is 5.0mA or less.
**This item denotes operating ranges, not meaning of recommended operating conditions.
Absolute Maximum Ratings
Characteristic Symbol Rating Unit
Forward current I
LED
Reverse voltage VR 5 V
Output current I
Output voltage VO −0.5~7 V
Supply voltage
(1 minute maximum)
Detector
Enable input voltage
(not to exceed V
Output collector power dissipation Po 40 mW
Operating temperature range T
Storage temperature range T
Lead solder temperature (10s) (**) T
Isolation voltage
(R.H.≤ 60%,AC 1min., (Note 10)
by more than 500mV)
CC
(no derating required)
F
O
V
CC
V
5.5 V
E
opr
stg
260 °C
sol
BV
S
20 mA
25 mA
7 V
−40~85 °C
−55~125 °C
2500 Vrms
3540 V
dc
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(**) 1.6mm below seating plane.
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2007-10-01
TLP2601
Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
High level output current IOH
Low level output voltage VOL
High level supply current I
Low level supply current I
Low level enable current IEL VCC = 5.5V, VE = 0.5V ⎯ −1.6 −2.0 mA
High level enable current IEH VCC = 5.5V, VE = 2.0V ⎯ −1 ⎯
High level enable voltage VEH (Note 11) 2.0 ⎯ ⎯
Low level enable voltage VEL ⎯ ⎯ ⎯ 0.8
Input forward voltage VF IF = 10mA, Ta = 25℃ ⎯ 1.65 1.75 V
Input reverse breakdown
voltage
(Ta = 0°C ~70°C unless otherwise noted)
V
= 5.5V, VO = 5.5V
CC
= 250μA, VE = 2.0V
I
F
V
= 5.5V, IF = 5mA
CC
= 2.0V, IOL(sinking) = 13mA
V
E
VCC = 5.5V, IF = 0, VE = 0.5V ⎯ 7 15 mA
CCH
V
= 5.5V, IF = 10mA
CC
CCL
IR = 10μA, Ta = 25℃ 5 ⎯ ⎯ V
BV
R
V
E
= 0.5V
⎯ 1 250 μA
⎯ 0.4 0.6 V
⎯ 12 19 mA
mA
V
Input capacitance CIN VF = 0, f = 1MHz ⎯ 45 ⎯ pF
Input diode temperature
coefficient
Input−output insulation
leakage current
Resistance (input−output) R
Capacitance (input−output) C
/ΔTA IF = 10mA ⎯ −2.0 ⎯ mV / °C
ΔV
F
Relative humidity = 45%
I
I−O
I−O
I−O
Ta=25℃, t = 5 second
= 3000Vdc, (Note 10)
V
I−O
V
= 500V, R.H.≤ 60%
I−O
(Note 10)
f = 1MHz, (Note 10) ⎯ 0.6 ⎯ pF
⎯ ⎯ 1 μA
5×10
10
10
14
⎯ Ω
(**)All typ.values are at VCC = 5V, Ta = 25°C.
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2007-10-01
TLP2601
Switching Characteristics
Characteristic Symbol
Propagation delay time to
high output level
Propagation delay time to
low output level
Output rise time(10−90%) tr ― 30 ― ns
Output fall time(90−10%) tf
Propagation delay time of
enable from V
Propagation delay time of
enable from V
Common mode transient
immunity at high output
level
Common mode transient
immunity at low output
level
to VEL
EH
to VEH
EL
(Ta = 25℃, VCC = 5 V)
Test
Circuit
t
pLH
― 60 75 ns
t
pHL
t
― 25 ― ns
ELH
1
2
t
EHL
CM
H
3
CM
L
Test Condition Min. Typ. Max. Unit
R
= 350Ω, CL = 15pF
L
= 7.5mA
I
F
― 60 75 ns
(Note 2), (Note 3),
(Note 4)&(Note 5)
― 30 ― ns
R
= 350Ω, CL = 15pF
L
= 7.5mA
I
F
= 3.0V
V
EH
= 0.5V
V
EL
― 25 ― ns
(Note 6)&(Note 7)
VCM = 400V
RL = 350Ω
1000 10000 ― V/μs
= 2V
V
O(min.)
= 0mA, (Note 9)
I
F
V
= 400V
CM
RL = 350Ω
−10000 ― V/μs
V
I
= 0.8V
O(max.)
= 7.5mA, (Note 8)
F
−1000
4
2007-10-01
Test Circuit 1.
A
t
pHL
Input I
F
Output V
and t
O
pLH
t
pHL
(*) CL is approximately 15pF which includes probe and stray wiring capacitance.
Test Circuit 2.
t
ELH
Input V
Output V
and t
E
O
EHL
t
EHL
TLP2601
5V
Pulse
IF = 7.5mA
= 3.75mA
I
F
V
t
pLH
1.5V
3.0V
1.5V
OH
V
OL
V
t
ELH
1.5V
OH
V
OL
generator
= 50Ω
Z
O
t
= 5ns
r
Monitoring
node
Pulse
generator
Z
= 50 Ω
O
= 5ns
t
r
I
F
7.5mA
dc
I
F
1 8
2
3
4
47Ω
Input V
E
monitoring node
1 8
2
3
4
V
CC
GND
V
CC
GND
R
C
Bypass
(*)
L
5V
L
V
O
Output
monitoring
node
7
6
5
0.1μF
R
C
Bypass
(*)
L
L
V
O
Output
monitoring
node
7
6
5
0.1μF
is approximately 15pF which includes probe and stray wiring capacitance.
(*) C
L
Test Circuit 3.
Transient Immunity and Typ. Waveforms.
90%
CM
V
V
10%
O
Switch at A : IF = 0mA
O
Switch at B : IF = 5mA
t
V
10%
tf
r
90%
400V
0V
5V
V
OL
1 8
I
F
B
V
FF
2
3
4
Pulse gen.
= 50 Ω
Z
O
V
CC
GND
V
CM
5V
7
6
5
R
0.1μF
L
Bypass
V
O
5
2007-10-01
TLP2601
– VF
I
100
Ta = 25 °C
10
(mA)
F
1
F
-2.6
-2.4
-2.2
-2.0
/ΔTa (mV/°C)
F
-1.8
ΔV
/ ΔTa – IF
F
0.1
forward current I
0.01
1.0
1.2 1.4
1.6
1.8
-1.6
Forward voltage temperature
coefficient ΔV
-1.4
0.1
0.3
1
3
Forward current IF (mA)
10
30
Forward voltage VF (V)
– IF
V
1kΩ
4kΩ
2
O
VCC = 5V
Ta = 25 °C
34
6
5
8
6
(V)
O
4
2
Output voltage V
0
0
RL=350Ω
1
Forward current IF (mA)
High level output current
(μA)
I
OH
100
50
30
10
5
3
1
0
10 20 30 40 50 60 70
I
OH
– Ta
IF = 250μA
VCC = 5.5V
VO = 5.5V
Ambient temperature Ta (°C)
8
6
(V)
O
4
2
Output voltage V
0
0 1 2
– IF
V
O
VCC = 5V
Ta = 70°C
0°C
34
Forward current IF (mA)
RL=350Ω
RL=4kΩ
5
– Ta
V
OL
IF = 5mA
0.5
0.4
(V)
OL
V
0.3
Low level output voltage
6
0.2
0
20
VCC = 5.5V
VE = 2V
IOL=16mA
12.8mA
9.6mA
6.4mA
40 60
80
Ambient temperature Ta (°C)
6
2007-10-01
k
Ω
p
k
Ω
k
Ω
Propagation delay time
t
120
100
80
(ns)
60
pLH
t
pHL,
40
t
20
0
5 19
7
pHL, tpLH
9
Forward current IF (mA)
– IF
t
pLH
t
pLH
t
LH
t
pHL
11 13 15 17
RL=4kΩ
Ta = 25°C
VCC = 5V
1kΩ
350Ω
350Ω
1kΩ
4
120
100
80
(ns)
pLH
60
t
pHL,
t
40
Propagation delay time
20
0
10 20 30
0
t
pHL, tpLH
– Ta
t
pLH
t
pLH
t
pHL
40 50
VCC = 5 V
IF = 7.5mA
Ambient temperature Ta (°C)
TLP2601
RL= 4kΩ
350Ω
1kΩ
350Ω
1kΩ
4kΩ
70
60
– Ta
t
320
VCC = 5V
IF = 7.5mA
300
280
(ns)
f
t
r,
80
r, tf
RL= 4kΩ
tf
tf
1kΩ
60
60
350Ω
350Ω
1
4
70
40
Rise, fall time t
20
0
0
10
20
30
tf
tr
40 50
Ambient temperature Ta (°C)
(ns)
t
t
Enable propagation delay time
ELH
EHL,
80
70
60
50
40
30
20
10
0
0
VCC = 5V
VEH = 3V
IF = 7.5mA
10 20
t
EHL, tELH
t
ELH
t
ELH
t
ELH
t
EHL
30
– Ta
RL= 4kΩ
350Ω
350Ω
40 50
1kΩ
1kΩ
4kΩ
60
70
Ambient temperature Ta (°C)
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2007-10-01
TLP2601
Notes
1. The VCC supply voltage to each TLP2601 isolator must be bypassed by a 0.1μF capacitor of larger.This can be
either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected
as close as possible to the package V
2. t
･ Propagation delay is measured from the 3.75mA level on the low to high transition of the input
pHL
current pulse to the 1.5V level on the high to low transition of the output voltage pulse.
3. t
･ Propagation delay is measured from the 3.75mA level on the high to low transition of the input
pLH
current pulse to the 1.5V level on the low to high transition of the output voltage pulse.
4. t
･ Fall time is measured from the 10% to the 90% levels of the high to low transition on the output
f
pulse.
5. t
･ Rise time is measured from the 90% to 10% levels of the low to high transition on the output
r
pulse.
6. t
･ Enable input propagation delay is measured from the 1.5V level on the low to high transition of
EHL
the input voltage pulse to the 1.5V level on the high to low transition of the output voltage pulse.
7. t
･ Enable input propagation delay is measured from the 1.5V level on the high to low transition of
ELH
the input voltage pulse to the 1.5V level on the low to high transition of the output voltage pulse.
8. CM
･ The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain
L
in the low output state (i.e., V
Measured in volts per microsecond (V / μs).
9. CM
･ The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain
H
in the high state (i.e., V
Measured in volts per microsecond(V / μs).
Volts/microsecond can be translated to sinusoidal voltages:
V / μs =
Example:
V
= 318Vpp when fCM = 1MHz using CML and CMH = 1000V / μs data sheet specified
CM
minimum.
10. ･ Device considered a two−terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and
8 shorted together.
11. Enable ･ No pull up resistor required as the device has an internal pull up resistor.
input
and GND pins of each device.
CC
< 0.8V).
OUT
> 2.0V).
OUT
)
(dv
CM
dt
Max.
= fCM V
CM
(p.p.)
8
2007-10-01
TLP2601
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
20070701-EN
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
9
2007-10-01
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