TOSHIBA TLP2530, TLP2531 Technical data

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TOSHIBA Photocoupler GaAℓAs Ired & Photo IC

TLP2530, TLP2531

Digital Logic Isolation

Line Receiver

Power Supply Control

Switching Power Supply

Transistor Inverter

The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a
pair of GaAℓAs light emitting diode and integrated photodetector.
This unit is 8−lead DIP.
Separate connection for the photodiode bias and output transistor
collectors improve the speed up to a hundred times that of a
conventional phototransistor coupler by reducing the base−collector
capacitance.

z TTL compatible
z Switching speed: t

(@R

z Guaranteed performance over temp: 0~70°C
z Isolation voltage: 2500 Vrms(min.)
z UL recognized: UL1577, file no. E67349

pHL

=0.3μs, t

=1.9kΩ)

L

=0.3μs(typ.)

pLH

TLP2530,TLP2531

Unit in mm

TOSHIBA 11−10C4

Weight: 0.54g

Pin Configuration

1

2

3

4

1. : Anode.1

2. : Cathode.1

3. : Cathode.2

4. : Anode.2

5. : Gnd

6. : V

(output 2)

O2

7. : V

(output 1)

O1

8. : V

CC

(top view)

8

7

6

5

Schematic

I

F1

+

1

V

F1

2

I

F2

+

4

V

F2

3

I

CC

V

CC

8

I

O1

V

O1

7

I

O2

V

O2

6

GND

5

2007-10-01 1

Absolute Maximum Ratings

Characteristic Symbol Rating Unit

TLP2530,TLP2531

Forward current(each channel)

Pulse forward current
(Each Channel)

Total pulse forward current

LED

(each channel)

Reverse voltage(each channel) V

Diode power dissipation
(each channel)

Output current(each channel) I

Peak output current
(each channel)

Supply voltage V

Detector

Output voltage(each channel) V

Output power dissipation
(each channel)

Operating temperature range T

Storage temperature range T

Lead solder temperature(10s)** T

Isolation voltage
(AC, 1min., R.H.≤ 60%)

(Note 1)

(Note 2)

(Note 3)

(Note 4)

(Note 5)

(Note 7)

I

I

FPT

P

I

P

BV

I

FP

OP

CC

opr

stg

sol

F

R

D

O

O

O

S

25 mA

50 mA

1 A

5 V

45 mW

8 mA

16 mA

−0.5~15 V

−0.5~15 V

35 mW

−55~100 °C

−55~125 °C

260 °C

2500 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

(Note 1) Derate 0.8mA above 70°C.
(Note 2) 50% duty cycle, 1ms pulse width. Derate 1.6mA / °C above 70°C.
(Note 3) Pulse width 1μs, 300pps.
(Note 4) Derate 0.9mW / °C above 70°C.
(Note 5) Derate 1mW / °C above 70°C.

**2mm below seating plane.

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage VCC 0 ⎯ 12 V

Forward current, each channel IF ⎯ 16 25 mA

Operating temperature T

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

opr

−25 ⎯ 85 °C

2007-10-01 2

Electrical Characteristics
Over Recommended Temperature

Characteristic Symbol Test Condition Min. Typ.** Max. Unit

TLP2530,TLP2531

(Ta = 0°C~70°C, unless otherwise noted)

TLP2530 7 30 ⎯

Current transfer
ratio
(each channel)

TLP2531

TLP2530 5 ⎯ ⎯

TLP2531

Logic low output

TLP2530

voltage
(each channel)

TLP2531

Logic high output current
(each channel)

Logic low supply current

Logic high supply current

Input forward voltage
(each channel)

Temperature coefficent of
forward voltage(each channel)

Input reverse breakdown
voltage(each channel)

Input capacitance
(each channel)

Input-output insulation
leakage current

Resistance (input−output)

ΔV

CTR

CTR

V

OL

I

OH

I

CCL

I

CCH

V

F

/ ΔTa

F

BV

C

IN

I

I−O

R

I−O

I

= 16mA, VO = 0.4V

F

= 4.5V, Ta = 25°C

V

CC

(Note 6)

= 16mA, VO = 0.5V

I

F

= 4.5V (Note 6)

V

CC

= 16mA, IO = 1.1mA

I

F

= 4.5V

V

CC

= 16mA, IO = 2.4mA

I

F

= 4.5V

V

CC

IF = 0mA, VO = V
Ta = 25℃

= 0mA, VO = V

I

F

I

= I

F1

V

O1

V

CC

I

= IF2 = 0mA

F1

R

= VO2 = Open

V

O1

V

= 15V

CC

I

= 16mA, Ta = 25°C

F

I

= 16mA

F

IR = 10μA, Ta = 25°C

f = 1MHz, V

F2

= V

O2

= 15V

= 16mA

= Open

= 0

F

CC

CC

Relative humidity = 45%
t = 5s, V

= 3000Vdc

I−O

Ta = 25°C (Note 7)

= 500Vdc (Note 7)

V

I−O

= 5.5V

= 15V

%

19 30 ⎯

%

15 ⎯ ⎯

⎯

0.1 0.4 V

⎯ 0.1 0.4 V

⎯ 3

500 nA

⎯ ⎯ 50 μA

⎯ 160 ⎯ μA

⎯ 0.05 4 μA

⎯ 1.65 1.7 V

⎯ −2 ⎯ mV/°C

5 ⎯ ⎯ V

⎯ 60 ⎯ pF

⎯ ⎯ 1.0 μA

⎯ 10

12

⎯ Ω

Capacitance (input−output)

Input-input leakage current

Resistance (input−input)

Capacitance (input−iutput)

**All typicals at Ta = 25°C.

C

I−O

f = 1MHz (Note 7)

⎯ 0.6 ⎯ pF

Relative humidity = 45%

I

I−I

t = 5s, V

I−I =

500V

⎯ 0.005 ⎯ μA

(Note 8)

R

I−I

C

I−I

= 500Vdc (Note 8)

V

I−I

f = 1MHz (Note 8)

⎯ 10

⎯ 0.25 ⎯ pF

11

⎯ Ω

2007-10-01 3