The TOSHIBA TLP2530 and TLP2531 dual photocouplers consist of a
pair of GaAℓAs light emitting diode and integrated photodetector.
This unit is 8−lead DIP.
Separate connection for the photodiode bias and output transistor
collectors improve the speed up to a hundred times that of a
conventional phototransistor coupler by reducing the base−collector
capacitance.
z TTL compatible
z Switching speed: t
(@R
z Guaranteed performance over temp: 0~70°C
z Isolation voltage: 2500 Vrms(min.)
z UL recognized: UL1577, file no. E67349
pHL
=0.3μs, t
=1.9kΩ)
L
=0.3μs(typ.)
pLH
TLP2530,TLP2531
Unit in mm
TOSHIBA 11−10C4
Weight: 0.54g
Pin Configuration
1
2
3
4
1. : Anode.1
2. : Cathode.1
3. : Cathode.2
4. : Anode.2
5. : Gnd
6. : V
(output 2)
O2
7. : V
(output 1)
O1
8. : V
CC
(top view)
8
7
6
5
Schematic
I
F1
+
1
V
F1
2
I
F2
+
4
V
F2
3
I
CC
V
CC
8
I
O1
V
O1
7
I
O2
V
O2
6
GND
5
2007-10-01 1
Absolute Maximum Ratings
Characteristic Symbol Rating Unit
TLP2530,TLP2531
Forward current(each channel)
Pulse forward current
(Each Channel)
Total pulse forward current
LED
(each channel)
Reverse voltage(each channel) V
Diode power dissipation
(each channel)
Output current(each channel) I
Peak output current
(each channel)
Supply voltage V
Detector
Output voltage(each channel) V
Output power dissipation
(each channel)
Operating temperature range T
Storage temperature range T
Lead solder temperature(10s)** T
Isolation voltage
(AC, 1min., R.H.≤ 60%)
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 7)
I
I
FPT
P
I
P
BV
I
FP
OP
CC
opr
stg
sol
F
R
D
O
O
O
S
25 mA
50 mA
1 A
5 V
45 mW
8 mA
16 mA
−0.5~15 V
−0.5~15 V
35 mW
−55~100 °C
−55~125 °C
260 °C
2500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
opr
−25 ⎯ 85 °C
2007-10-01 2
Electrical Characteristics
Over Recommended Temperature
Characteristic Symbol Test Condition Min. Typ.** Max. Unit
TLP2530,TLP2531
(Ta = 0°C~70°C, unless otherwise noted)
TLP2530 7 30 ⎯
Current transfer
ratio
(each channel)
TLP2531
TLP2530 5 ⎯ ⎯
TLP2531
Logic low output
TLP2530
voltage
(each channel)
TLP2531
Logic high output current
(each channel)
Logic low supply current
Logic high supply current
Input forward voltage
(each channel)
Temperature coefficent of
forward voltage(each channel)
Input reverse breakdown
voltage(each channel)
Input capacitance
(each channel)
Input-output insulation
leakage current
Resistance (input−output)
ΔV
CTR
CTR
V
OL
I
OH
I
CCL
I
CCH
V
F
/ ΔTa
F
BV
C
IN
I
I−O
R
I−O
I
= 16mA, VO = 0.4V
F
= 4.5V, Ta = 25°C
V
CC
(Note 6)
= 16mA, VO = 0.5V
I
F
= 4.5V (Note 6)
V
CC
= 16mA, IO = 1.1mA
I
F
= 4.5V
V
CC
= 16mA, IO = 2.4mA
I
F
= 4.5V
V
CC
IF = 0mA, VO = V
Ta = 25℃
= 0mA, VO = V
I
F
I
= I
F1
V
O1
V
CC
I
= IF2 = 0mA
F1
R
= VO2 = Open
V
O1
V
= 15V
CC
I
= 16mA, Ta = 25°C
F
I
= 16mA
F
IR = 10μA, Ta = 25°C
f = 1MHz, V
F2
= V
O2
= 15V
= 16mA
= Open
= 0
F
CC
CC
Relative humidity = 45%
t = 5s, V
= 3000Vdc
I−O
Ta = 25°C (Note 7)
= 500Vdc (Note 7)
V
I−O
= 5.5V
= 15V
%
19 30 ⎯
%
15 ⎯ ⎯
⎯
0.1 0.4 V
⎯ 0.1 0.4 V
⎯ 3
500 nA
⎯ ⎯ 50 μA
⎯ 160 ⎯ μA
⎯ 0.05 4 μA
⎯ 1.65 1.7 V
⎯ −2 ⎯ mV/°C
5 ⎯ ⎯ V
⎯ 60 ⎯ pF
⎯ ⎯ 1.0 μA
⎯ 10
12
⎯Ω
Capacitance (input−output)
Input-input leakage current
Resistance (input−input)
Capacitance (input−iutput)
**All typicals at Ta = 25°C.
C
I−O
f = 1MHz (Note 7)
⎯ 0.6 ⎯ pF
Relative humidity = 45%
I
I−I
t = 5s, V
I−I =
500V
⎯ 0.005 ⎯μA
(Note 8)
R
I−I
C
I−I
= 500Vdc (Note 8)
V
I−I
f = 1MHz (Note 8)
⎯ 10
⎯ 0.25 ⎯ pF
11
⎯Ω
2007-10-01 3
TLP2530,TLP2531
Switching Characteristics
Characteristic Symbol
Propagation delay
time to logic low
at output
(each channel)
Propagation delay
time to logic
high at output
(each channel)
Common mode
transient
immunity at logic
high level output
(each channel,
Note 9)
Common mode
transient
immunity at logic
low level output
(each channel,
Note 9)
Bandwidth
(each channel, Note 10)
TLP2530 RL = 4.1kΩ ― 0.3 1.5
TLP2531
TLP2530 RL = 4.1kΩ ― 0.5 1.5
TLP2531
TLP2530
TLP2531
TLP2530
TLP2531
(unless otherwise specified, Ta = 25°C, V
Test
Cir−
cuit
t
pHL
1
t
pLH
2
CM
H
CM
L
BW
1
2
3
Test Condition Min. Typ. Max.Unit
R
= 1.9kΩ ― 0.2 0.8
L
R
= 1.9kΩ ― 0.3 0.8
L
I
= 0mA, V
F
= 4.1kΩ
R
L
I
= 0mA, V
F
RL = 1.9kΩ
V
= 400V
CM
= 4.1kΩ, IF = 16mA
R
L
= 400
V
CM
RL = 1.9kΩ, IF = 16mA
= 100Ω
R
L
CM
CM
p−p
p−p
= 400V
= 400V
p−p
p−p
= 5V, IF = 16mA)
CC
― 1500 ―
― 1500 ―
― −1500
― −1500 ―
―
2
―
μs
μs
V / μs
V / μs
― MH
Z
(Note 6) DC current transfer ratio is defined as the ratio of output collector current, I
input current
times 100%.
, IF,
to the forward LED
O,
(Note 7) Device considered a two−terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7, and
8 shorted together.
(Note 8) Measured between pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
(Note 9) Common mode transient immunity in logic high level is the maximum tolerable (positive) dVcm / dt
on the leading egde of the common mode pulse, Vcm, to assure that the output will remain in a
logic high state(i.e., V
> 2.0V).
O
Common mode transient immunity in logic low Level is the maximum tolerable (negative) dVcm / dt
on the trailing edge of the common mode pulse signal, Vcm, to assure that the output will remain in
logic low state(i.e., V
> 0.8V).
O
(Note 10) The frequency at which the ac output voltage is 3dB below the low frequency asymptote.
2007-10-01 4
Test Circuit 1: Switching Time, tpHL, tpLH
r
A
p
Pulse
Generator
PW=100μs
Duty Cycle = 1/10
IF Monito
I
F
1
100Ω
2
3
4
8
7
6
5
VCC=5V
R
L
Output
Monitor
I
F
0
V
O
V
O
Test Circuit 2: Transient Immunity And Typical Waveform
V
VCC=5V
=50Ω
s)(rt
μ
1
2
3
4
V
+
CM ,
=
L
I
F
A
B
V
FF
Pulse Generator
CM
Z
320(V)
=
H
CM
320(V)
8
7
6
5
R
L
V
O
Output
Monitor
s)(ft
μ
CM
V
O
(IF=0mA)
V
O
(IF=16mA)
Test Circuit 3: Frequency Response
TLP2530,TLP2531
5V
pLH
1.5V
V
400V
0V
5V
2V
0.8V
V
OL
t
r
1.5V
t
pHL
90%
10%
t
t
f
OL
Set I
In
20kΩ
100Ω
1
2
3
4
1.6Vdc
0.25V
P-P
5V
F
0.1μF
C
ut
560Ω
ac
8
7
6
5
15V
R
L
V
O
2007-10-01 5
TLP2530,TLP2531
(
)
– VF
I
100
Ta = 25 °C
50
30
10
5
(mA)
F
3
1
0.5
0.3
0.1
Forword current I
0.05
0.03
0.01
1.0 2.0
1.2 1.4 1.6 1.8
F
-2.6
-2.4
-2.2
/ ΔTa ( m V / ° C )
-2.0
F
ΔV
-1.8
Forward voltage temperature
-1.6
Coefficient
-1.4
0.1 0.3 0.5 1 3 5 10 30
Forward voltage VF (V)
Forward current IF (mA)
ΔVF /ΔTa - I
F
High level output current
Current transfer ratio
(nA)
I
1
OH
(%)
/ I
I
100
F
O
300
100
50
30
10
0.6
50
30
10
– Ta
I
OH(1)
5
3
1
0
40 80 120
160
Ambient temperature Ta (°C)
/ IF – IF
I
O
VCC = 5 V
VO = 0.4 V
Ta = -2 5°C
25°C
100°C
5
3
10
5
3
1
(mA)
O
0.5
0.3
0.1
Output current I
0.05
0.03
0.01
0.1
0.3 0.5 13 5 10 30 50 100
Forward current IF (mA)
1.2
1.0
F
0.8
/ I
O
0.6
0.4
Normalized I
0.2
– IF
I
O
/ IF – Ta
I
O
VCC = 5 V
VO = 0.4 V
Ta = 25 °C
300
Normalized to :
IF = 16 mA
VCC = 4.5 V
VO = 0.4 V
Ta = 25 °C
1
0.3 0.5 1 35 10 3050
Forward current IF (mA)
0
-40100 -20 020 40 60 80
Ambient temperature Ta (°C)
2007-10-01 6
TLP2530,TLP2531
– VO
I
O
VCC = 5 V
10
8
(mA)
O
6
4
Output Current I
2
30mA
25mA
20mA
15mA
10mA
IF = 5mA
Ta = 25 °C
5
4
(V)
O
3
Output voltage V
2
1
RL = 2kΩ
3.9kΩ
10kΩ
– IF
V
O
I
F
=5V
V
CC
R
L
V
O
Ta=25°C
0
1 2 3 4 5 6 7
0
Output voltage VO (V)
, t
pLH
– RL
t
pLH
t
pHL
t
5
IF = 16 mA
VCC = 5 V
3
Ta = 25 °C
1
(μs)
pLH
, t
0.5
pHL
t
0.3
Propagation delay time
0.1
1
pHL
3 5 1030 50 100
0
0
481216 20 24
Forward current IF (mA)
Load resistance RL (kΩ)
2007-10-01 7
TLP2530,TLP2531
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
20070701-EN
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
2007-10-01 8
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