TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC
TLP251F
TLP251F
Inverter For Air Conditionor
Induction Heating
Transistor Inverter
Power MOS FET Gate Drive
IGBT Gate Drive
The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8−lead DIP package.
TLP251F is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.
(~15A)
· Input threshold current: IF = 5mA (max.)
· Supply current: 11mA (max.)
· Supply voltage: 10~35V
· Output peak current: ±0.4A (max.)
, t
· Switching time: t
· Isolation voltage: 2500V
· UL recognized: UL1577, file no. E67349
· Option (D4) type
VDE approved: DIN VDE0884 / 06.92, certificate no. 87447
Maximum operating insulation voltage: 1140V
Highest permissible over voltage: 6000V
pHL
= 1µs (max.)
pLH
(min.)
rms
PK
PK
Unit in mm
TOSHIBA 11−10C402
Weight: 0.54g
(Note 1) When a VDE0884 approved type is needed,
please designate the “ Option (D4) ”
· Structural parameter
Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
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Truth Table
Tr1 Tr2
TLP251F
Input
LED
On On Off
Off Off On
Pin Configuration
(top vi ew)
Schmatic
1
2
3
4
(Note 2 ) A 0.1µF bypass capacitor must be connected between pin 8 and 5.
8
7
6
5
1: N.C.
2: Anode
3: Cathode
4: N.C.
5: GND
6: V
(output)
O
7: N.C.
8: V
CC
I
F
2
V
F
3
ICC
(Tr 1)
I
O
(Tr
V
CC
8
6
V
O
2)
GND
5
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TLP251F
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
000707EBC
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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