TOSHIBA TLP250-INV Technical data

２

４

)

查询TLP250供应商

TOSHIBA PHOTOCOUPLER GaAlAs IRED & PHOTO-IC

TLP250(INV)

TRANSISTOR INVERTER
INVERTERS FOR AIR CONDITIONER
IGBT GATE DRIVE
POWER MOS FET GATE DRIVE

The TOSHIBA TLP250(INV) consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP.
TLP250(INV) is suitable for gate driving circuit of IGBT or power MOS FET.

l Input Threshold Current : IF=5mA(MAX)

l Supply Current(ICC) : 11mA(MAX)
l Supply Voltage(VCC) : 10~35V

l Output Current(IO)

l Switching Time(tpLH/tpHL) : 0.5µs(MAX)

l Isolation Voltage : 2500Vrms

l UL Recognized

l Option(D4)

VDE Approved : DIN VDE0884/06.92 Certificate No.76823

Maximum Operating Insulation Voltage : 630V

Highest Permissible Over Voltage

(Note):When a VDE0884 approved type is needed,

Please designate the “Option(D4)”

: ±2.0A(MAX)

: UL1577,File No.E67349

PK

: 4000V

PK

TOSHIBA 11−10C4

Weight: 0.54 g

TLP250(INV)

Unit in mm

l Creepage Distance : 6.4mm(MIN)

Clearance : 6.4mm(MIN)

TRUTH TABLE

Tr 1 Tr 2

INPUT LED

SCHEMATIC

IF

2 +

VF

3 -

A 0.1µF bypass capacitor must be

Connected between pin 8 and 5(See Note 5).

ON ON OFF

OFF OFF ON

I

CC

（Tr1）

IO

（Tr２）

8

７

6

5

V

CC

VO

V

O

GND

PIN CONFIGURATION(TOP VIEW

８

１

３

７

６

５

1:N.C.
2: ANODE
3:CATHODE
4:N.C.
5:GND
6:VO(OUTPUT)
7:VO
8:VCC

1

2002-06-27

TLP250(INV)

MAXIMUM RATINGS

(Ta=25°C)

CHARACTERISTIC SYMBOL RATING UNIT

Forward Current I

F

20 mA

Forward Current Derating (Ta≥70℃) ∆IF /∆Ta −0.36 mA /°C

Peak Transient Forward Current (Note 1) I

LED

Reverse Voltage V

FPT

R

1 A

5 V

Junction Temperature Tj 125 °C

“H” Peak
Output Current

PW ≤2.5µs , f≤15 kHz −1.5

I

PW≤1.0µs , f≤15 kHz

OPH

−2.0

(Note 2)

“L” Peak
Output Current

Output Voltage

DETECTOR

Supply Voltage

PW≤2.5µs , f≤15 kHz +1.5

I

PW ≤1.0µs , f≤15 kHz

OPL

(Ta≤70°C) 35

(Ta=85°C)

(Ta≤70°C) 35

(Ta=85°C)

V

O

V

CC

+2.0

24

24

Output Voltage Derating (Ta≥70°C) ∆VO /∆Ta −0.73 V /°C

Supply Voltage Derating (Ta≥70°C) ∆

Junction Temperature T

VCC /∆Ta

j

−0.73 V /°C

125 °C

Operating Frequency (Note 3) f 25 kHz

Operating Temperature Range T

Storage Temperature Range T

Lead Soldering Temperature(10s) T

Isolation Voltage (AC,1min., R.H. ≤60%,Ta=25°C) (Note 4) BV

opr

stg

sol

−20~85 °C

−55~125 °C

260 °C

S

2500 Vrms

A

A

V

V

(Note 1) : Pulse width PW≤1µs,300pps

(Note 2) : Exporenential Waveform

(Note 3) : Exporenential Waveform I

≤−1.0A (≤2.5µs) , I

OPH

≤+1.0A (≤2.5µs)

OPL

(Note 4) : Device considerd a two terminal device : pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together.

(Note 5) : A ceramic capacitor(0.1µF) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear

amplifier.Failure to provide the bypassing may impair the switching proparty.The total lead length between capacitor and

coupler should not exceed 1cm.

RECOMMENDED OPERATING CONDITIONS

CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT

Input Current, ON I

Input Voltage, OFF V

Supply Voltage V

Peak Output Current I

OPH

Operating Temperature T

F (ON)

F (OFF)

CC

/ I

opr

OPL

7 8 10 mA

0 — 0.8 V

15 — 30 20 V

— — ±0.5 A

−20 25 70 85 °C

2

2002-06-27

TLP250(INV)

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC SYMBOL

Input Forward Voltage V

Temperature Coefficient of

Forward Voltage

Input Reverse Current I

Input Capacitance C

“H” Level I

Output Current

“L” Level I

“H” Level V

Output Voltage

“L” Level V

“H” Level I

Supply Current

“L” Level I

Threshold Input
Current

Threshold Input
Voltage

L→H I

H→L V

Supply Voltage V

Capacitance (Input-Output) C

Resistance (Input-Output) R

∆V

F

/∆Ta

F

R

T

OPH

OPL

OH

OL

CCH

CCL

FLH

FHL

CC

S

S

(Ta = −20~70°C,Unless otherwise specified)

TEST

CIRCUIT

—

—

—

—

2

1

3

4

—

—

—

TEST CONDITION MIN TYP. MAX UNIT

I

= 10 mA, Ta = 25°C

F

IF = 10 mA

V

= 5 V, Ta = 25°C

R

V = 0, f = 1 MHz, Ta = 25°C

= 10 mA

I

V

= 30 V

CC

(*1)

= +15 V

V

CC1

V

= −15 V

EE1

R

= 200Ω, IF = 5 mA

L

= +15 V

V

CC1

V

= −15 V

EE1

R

= 200Ω, VF = 0.8 V

L

F

V

I

F

V

= 4 V

8−6

= 0

= 2.5 V

6−5

IF = 10 mA
Ta = 25°C

= 10 mA — — 11

I

V

CC

= 30 V

F

IF = 0 mA
Ta = 25°C

= 0 mA — — 11

I

F

V

= +15 V

CC1

V

= −15 V

EE1

R

= 200Ω, VO > 0V

L

= +15 V

V

CC1

V

= −15 V

EE1

R

= 200Ω, VO < 0V

L

—

−2.0 — mV /°C

—

—

—

−1.0 −1.5

1.0 2

11 12.8 —

— −14.2 −12.5

— 7 —

— 7.5 —

— 1.2 5 mA

0.8 — — V

1.6 1.8 V

— 10 µA

45 250 pF

—

—

— — 10 — 35 V

— VS = 0, f = 1 MHz, Ta = 25°C — 1.0 2.0 pF

= 500 V, Ta = 25°C

—

V

S

R.H.≤60%

1×10

12

14

10

— Ω

A

V

mA

mA

(*) : All typical values are at Ta=25°C

(*1) : Duration of IO time ≤ 50µs

3

2002-06-27