TOSHIBA TLP250-INV Technical data

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TOSHIBA PHOTOCOUPLER GaAlAs IRED & PHOTO-IC
TLP250(INV)
TRANSISTOR INVERTER INVERTERS FOR AIR CONDITIONER IGBT GATE DRIVE POWER MOS FET GATE DRIVE
The TOSHIBA TLP250(INV) consists of a GaAlAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP. TLP250(INV) is suitable for gate driving circuit of IGBT or power MOS FET.
l Input Threshold Current : IF=5mA(MAX)
l Supply Current(ICC) : 11mA(MAX) l Supply Voltage(VCC) : 10~35V
l Output Current(IO)
l Switching Time(tpLH/tpHL) : 0.5µs(MAX)
l Isolation Voltage : 2500Vrms
l UL Recognized
l Option(D4)
VDE Approved : DIN VDE0884/06.92 Certificate No.76823
Maximum Operating Insulation Voltage : 630V
Highest Permissible Over Voltage
(Note):When a VDE0884 approved type is needed,
Please designate the “Option(D4)”
: ±2.0A(MAX)
: UL1577,File No.E67349
PK
: 4000V
PK
TOSHIBA 11−10C4
Weight: 0.54 g
TLP250(INV)
Unit in mm
l Creepage Distance : 6.4mm(MIN)
Clearance : 6.4mm(MIN)
TRUTH TABLE
Tr 1 Tr 2
INPUT LED
SCHEMATIC
IF
2 +
VF
3 -
A 0.1µF bypass capacitor must be
Connected between pin 8 and 5(See Note 5).
ON ON OFF
OFF OFF ON
I
CC
Tr1
IO
(Tr2)
8
6
5
V
CC
VO
V
O
GND
PIN CONFIGURATION(TOP VIEW
1:N.C. 2: ANODE 3:CATHODE 4:N.C. 5:GND 6:VO(OUTPUT) 7:VO 8:VCC
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2002-06-27
TLP250(INV)
MAXIMUM RATINGS
(Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current I
F
20 mA
Forward Current Derating (Ta70) ∆IF /Ta 0.36 mA /°C
Peak Transient Forward Current (Note 1) I
LED
Reverse Voltage V
FPT
R
1 A
5 V
Junction Temperature Tj 125 °C
“H” Peak Output Current
PW 2.5µs , f15 kHz 1.5
I
PW1.0µs , f15 kHz
OPH
2.0
(Note 2)
“L” Peak Output Current
Output Voltage
DETECTOR
Supply Voltage
PW2.5µs , f15 kHz +1.5
I
PW 1.0µs , f15 kHz
OPL
(Ta70°C) 35
(Ta=85°C)
(Ta70°C) 35
(Ta=85°C)
V
O
V
CC
+2.0
24
24
Output Voltage Derating (Ta≥70°C) ∆VO /Ta 0.73 V /°C
Supply Voltage Derating (Ta≥70°C)
Junction Temperature T
VCC /∆Ta
j
0.73 V /°C
125 °C
Operating Frequency (Note 3) f 25 kHz
Operating Temperature Range T
Storage Temperature Range T
Lead Soldering Temperature(10s) T
Isolation Voltage (AC,1min., R.H. 60%,Ta=25°C) (Note 4) BV
opr
stg
sol
20~85 °C
55~125 °C
260 °C
S
2500 Vrms
A
A
V
V
(Note 1) : Pulse width PW≤1µs,300pps
(Note 2) : Exporenential Waveform
(Note 3) : Exporenential Waveform I
≤−1.0A (2.5µs) , I
OPH
+1.0A (2.5µs)
OPL
(Note 4) : Device considerd a two terminal device : pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together.
(Note 5) : A ceramic capacitor(0.1µF) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear
amplifier.Failure to provide the bypassing may impair the switching proparty.The total lead length between capacitor and
coupler should not exceed 1cm.
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT
Input Current, ON I
Input Voltage, OFF V
Supply Voltage V
Peak Output Current I
OPH
Operating Temperature T
F (ON)
F (OFF)
CC
/ I
opr
OPL
7 8 10 mA
0 — 0.8 V
15 — 30 20 V
— — ±0.5 A
20 25 70 85 °C
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TLP250(INV)
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL
Input Forward Voltage V
Temperature Coefficient of
Forward Voltage
Input Reverse Current I
Input Capacitance C
“H” Level I
Output Current
“L” Level I
“H” Level V
Output Voltage
“L” Level V
“H” Level I
Supply Current
“L” Level I
Threshold Input Current
Threshold Input Voltage
LH I
HL V
Supply Voltage V
Capacitance (Input-Output) C
Resistance (Input-Output) R
V
F
/Ta
F
R
T
OPH
OPL
OH
OL
CCH
CCL
FLH
FHL
CC
S
S
(Ta = −20~70°C,Unless otherwise specified)
TEST
CIRCUIT
2
1
3
4
TEST CONDITION MIN TYP. MAX UNIT
I
= 10 mA, Ta = 25°C
F
IF = 10 mA
V
= 5 V, Ta = 25°C
R
V = 0, f = 1 MHz, Ta = 25°C
= 10 mA
I
V
= 30 V
CC
(*1)
= +15 V
V
CC1
V
= 15 V
EE1
R
= 200, IF = 5 mA
L
= +15 V
V
CC1
V
= 15 V
EE1
R
= 200, VF = 0.8 V
L
F
V
I
F
V
= 4 V
86
= 0
= 2.5 V
65
IF = 10 mA Ta = 25°C
= 10 mA 11
I
V
CC
= 30 V
F
IF = 0 mA Ta = 25°C
= 0 mA 11
I
F
V
= +15 V
CC1
V
= 15 V
EE1
R
= 200, VO > 0V
L
= +15 V
V
CC1
V
= 15 V
EE1
R
= 200, VO < 0V
L
2.0 — mV /°C
1.0 1.5
1.0 2
11 12.8 —
14.2 12.5
— 7 —
— 7.5 —
— 1.2 5 mA
0.8 — — V
1.6 1.8 V
— 10 µA
45 250 pF
10 — 35 V
— VS = 0, f = 1 MHz, Ta = 25°C 1.0 2.0 pF
= 500 V, Ta = 25°C
V
S
R.H.60%
1×10
12
14
10
A
V
mA
mA
(*) : All typical values are at Ta=25°C
(*1) : Duration of IO time 50µs
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TLP250(INV)
µ
A
SWITCHING CHARACTERISTICS
CHARACTERISTIC SYMBOL
LH t
Delay Time
Switching Time Dispersion
between ON and OFF
Output Rise Time t
Output Fall Time t
Common Mode Transient
Immunity at High Level Output
Common Mode Transient
Immunity at Low Level Output
HL t
Fig.1 I
TEST CIRCUIT
OPL
1
8
pLH
pHL
|tpHL-tpLH| — — 0.45
r
f
CM
H
CM
L
(Ta = 20~70°C,Unless otherwise specified)
TEST
CIRCUIT
5
6
TEST CONDITION MIN TYP. MAX UNIT
0.05 0.15 0.5 Propagation
I
= 8 mA,
F
= 15 V
V
CC
= 20, CL = 10nF
R
L
VCM = 1000 V, IF = 8 mA V
= 30 V, Ta = 25°C
CC
= 1000 V, IF = 0 mA
V
CM
V
= 30 V, Ta = 25°C
CC
Fig.2 I
TEST CIRCUIT
OPH
1
0.05 0.15 0.5
— —
— —
15000 — — V /µs
15000 — — V /µs
8
µs
4
Fig.3 VOH TEST CIRCUIT
IF
1
4
0.1µA
A
I
OPL
8
0.1µA
0.1
V
CC
V
6-5
A
I
4
OPH
V
8-6
8
0.1µA
V
RL
VOL
Fig.4 VOL TEST CIRCUIT
1
V
CC1
RL
V
VOH
VF
V
CC
V
CC1
4
V
V
EE1
EE1
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2002-06-27
TLP250(INV)
r
V
V
A
(
Fig.5 t
pLH
、、、、t
、、、、tr、、、、tf TEST CIRCUIT
pHL
1
IF
8
0.1µF
RL
4
5
Fig.6 CMH , CML TEST CIRCUIT
SW
B
IF
1
4
CM
CL
8
V
0.1µF
IF
t
VCC
O
V
O
tf
90% 50%
10%
tpLH
V
CC
O
tpHL
VCM
10%
SW : A
VO
SW : B(IF=0mA)
CML(CMH) is the maximum rate of rise(fall) of the common mode voltage that can be sustained with the output voltage in the low(high)state.
90%
tr
IF=8mA)
3V
1000V
tf
800(V)
=
H
t
800(V)
=
L
t
26V
CM
CM
CM
H
L
CM
(µs)
f
(µs)
r
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2002-06-27
TLP250(INV)
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
000707EBC
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-06-27
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