TRANSISTOR INVERTER
INVERTERS FOR AIR CONDITIONER
IGBT GATE DRIVE
POWER MOS FET GATE DRIVE
The TOSHIBA TLP250(INV) consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP.
TLP250(INV) is suitable for gate driving circuit of IGBT or power MOS FET.
l Input Threshold Current : IF=5mA(MAX)
l Supply Current(ICC) : 11mA(MAX)
l Supply Voltage(VCC) : 10~35V
l Output Current(IO)
l Switching Time(tpLH/tpHL) : 0.5µs(MAX)
l Isolation Voltage : 2500Vrms
l UL Recognized
l Option(D4)
VDE Approved : DIN VDE0884/06.92 Certificate No.76823
Forward Current Derating (Ta≥70℃) ∆IF /∆Ta −0.36 mA /°C
Peak Transient Forward Current (Note 1)I
LED
Reverse Voltage V
FPT
R
1 A
5 V
Junction Temperature Tj 125 °C
“H” Peak
Output Current
PW ≤2.5µs , f≤15 kHz−1.5
I
PW≤1.0µs , f≤15 kHz
OPH
−2.0
(Note 2)
“L” Peak
Output Current
Output Voltage
DETECTOR
Supply Voltage
PW≤2.5µs , f≤15 kHz+1.5
I
PW ≤1.0µs , f≤15 kHz
OPL
(Ta≤70°C)35
(Ta=85°C)
(Ta≤70°C)35
(Ta=85°C)
V
O
V
CC
+2.0
24
24
Output Voltage Derating (Ta≥70°C) ∆VO /∆Ta−0.73 V /°C
Supply Voltage Derating (Ta≥70°C) ∆
Junction Temperature T
VCC /∆Ta
j
−0.73 V /°C
125 °C
Operating Frequency (Note 3)f 25 kHz
Operating Temperature Range T
Storage Temperature Range T
Lead Soldering Temperature(10s) T
Isolation Voltage (AC,1min., R.H. ≤60%,Ta=25°C) (Note 4)BV
opr
stg
sol
−20~85 °C
−55~125 °C
260 °C
S
2500 Vrms
A
A
V
V
(Note 1) : Pulse width PW≤1µs,300pps
(Note 2) : Exporenential Waveform
(Note 3) : Exporenential Waveform I
≤−1.0A (≤2.5µs) , I
OPH
≤+1.0A (≤2.5µs)
OPL
(Note 4) : Device considerd a two terminal device : pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8 shorted together.
(Note 5) : A ceramic capacitor(0.1µF) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear
amplifier.Failure to provide the bypassing may impair the switching proparty.The total lead length between capacitor and
coupler should not exceed 1cm.
RECOMMENDED OPERATING CONDITIONS
CHARACTERISTIC SYMBOL MINTYP.MAX UNIT
Input Current, ON I
Input Voltage, OFF V
Supply Voltage V
Peak Output Current I
OPH
Operating Temperature T
F (ON)
F (OFF)
CC
/ I
opr
OPL
7 8 10 mA
0 — 0.8 V
15 — 30 20 V
— — ±0.5 A
−2025 70 85 °C
2
2002-06-27
TLP250(INV)
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL
Input Forward Voltage V
Temperature Coefficient of
Forward Voltage
Input Reverse Current I
Input Capacitance C
“H” Level I
Output Current
“L” Level I
“H” Level V
Output Voltage
“L” Level V
“H” Level I
Supply Current
“L” Level I
Threshold Input
Current
Threshold Input
Voltage
L→H I
H→L V
Supply Voltage V
Capacitance (Input-Output) C
Resistance (Input-Output) R
∆V
F
/∆Ta
F
R
T
OPH
OPL
OH
OL
CCH
CCL
FLH
FHL
CC
S
S
(Ta = −20~70°C,Unless otherwise specified)
TEST
CIRCUIT
—
—
—
—
2
1
3
4
—
—
—
TEST CONDITION MIN TYP. MAXUNIT
I
= 10 mA, Ta = 25°C
F
IF = 10 mA
V
= 5 V, Ta = 25°C
R
V = 0, f = 1 MHz, Ta = 25°C
= 10 mA
I
V
= 30 V
CC
(*1)
= +15 V
V
CC1
V
= −15 V
EE1
R
= 200Ω, IF = 5 mA
L
= +15 V
V
CC1
V
= −15 V
EE1
R
= 200Ω, VF = 0.8 V
L
F
V
I
F
V
= 4 V
8−6
= 0
= 2.5 V
6−5
IF = 10 mA
Ta = 25°C
= 10 mA — — 11
I
V
CC
= 30 V
F
IF = 0 mA
Ta = 25°C
= 0 mA — — 11
I
F
V
= +15 V
CC1
V
= −15 V
EE1
R
= 200Ω, VO > 0V
L
= +15 V
V
CC1
V
= −15 V
EE1
R
= 200Ω, VO < 0V
L
—
−2.0 — mV /°C
—
—
—
−1.0 −1.5
1.0 2
11 12.8 —
— −14.2 −12.5
— 7 —
— 7.5 —
— 1.2 5 mA
0.8 — — V
1.6 1.8 V
— 10 µA
45 250 pF
—
—
— — 10 — 35 V
— VS = 0, f = 1 MHz, Ta = 25°C— 1.0 2.0 pF
= 500 V, Ta = 25°C
—
V
S
R.H.≤60%
1×10
12
14
10
— Ω
A
V
mA
mA
(*) : All typical values are at Ta=25°C
(*1) : Duration of IO time ≤ 50µs
3
2002-06-27
TLP250(INV)
µ
A
SWITCHING CHARACTERISTICS
CHARACTERISTIC SYMBOL
L→H t
Delay Time
Switching Time Dispersion
between ON and OFF
Output Rise Time t
Output Fall Time t
Common Mode Transient
Immunity at High Level Output
Common Mode Transient
Immunity at Low Level Output
H→L t
Fig.1 I
TEST CIRCUIT
OPL
1
8
pLH
pHL
|tpHL-tpLH|— — 0.45
r
f
CM
H
CM
L
(Ta = −20~70°C,Unless otherwise specified)
TEST
CIRCUIT
5
6
TEST CONDITION MIN TYP. MAXUNIT
0.05 0.15 0.5 Propagation
I
= 8 mA,
F
= 15 V
V
CC
= 20Ω, CL = 10nF
R
L
VCM = 1000 V, IF = 8 mA
V
= 30 V, Ta = 25°C
CC
= 1000 V, IF = 0 mA
V
CM
V
= 30 V, Ta = 25°C
CC
Fig.2 I
TEST CIRCUIT
OPH
1
0.05 0.15 0.5
— —
— —
−15000 — — V /µs
15000 — — V /µs
8
µs
4
Fig.3 VOH TEST CIRCUIT
IF
1
↑
4
0.1µA
A
I
OPL
8
0.1µA
0.1
V
CC
V
6-5
↑
A
I
4
OPH
V
8-6
8
0.1µA
V
RL
VOL
Fig.4 VOL TEST CIRCUIT
1
V
CC1
RL
V
VOH
VF
V
CC
V
CC1
4
V
V
EE1
EE1
4
2002-06-27
TLP250(INV)
r
V
V
A
(
Fig.5 t
pLH
、、、、t
、、、、tr、、、、tf TEST CIRCUIT
pHL
1
IF
8
0.1µF
RL
4
5
Fig.6 CMH , CML TEST CIRCUIT
SW
B
IF
1
4
CM
CL
8
V
0.1µF
IF
t
VCC
O
V
O
tf
90%
50%
10%
tpLH
V
CC
O
tpHL
VCM
10%
SW : A
VO
SW : B(IF=0mA)
CML(CMH) is the maximum rate of rise(fall) of the common mode voltage that can be
sustained with the output voltage in the low(high)state.
90%
tr
IF=8mA)
3V
1000V
tf
800(V)
=
H
t
800(V)
=
L
t
26V
CM
CM
CM
H
L
CM
(µs)
f
(µs)
r
5
2002-06-27
TLP250(INV)
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
000707EBC
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-06-27
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