TOSHIBA TLP2200 Technical data

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TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC

TLP2200

TLP2200

Isolated Buss Driver

High Speed Line Receiver

Microprocessor System Interfaces

MOS FET Gate Driver

Direct Replacement For HCPL−2200

The TOSHIBA TLP2200 consists of a GaAℓAs light
emitting diode and integrated high gain, high speed
photodetector.
This unit is 8−lead DIP package.
The detector has a three state output stage that
eliminates the need for pull−up resistor, and built−in
schmitt trigger. The detector IC has an internal shield
that provides a guaranteed common mode transient
immunity of 1000V / μs.

z Input current: I
z Power supply voltage: V
z Switching speed: 2.5MBd guaranteed
z Common mode transient immunity: ±1000V / μs (min.)
z Guaranteed performance over temp: 0~85°C
z Isolation voltage: 2500Vrms(min.)
z UL recognized: UL1577, file No. E67349

Truth Table

Input Enable Output

H H Z

L H Z

H L H

L L L

= 1.6mA

F

= 4.5~20V

CC

(positive logic)

TOSHIBA 11−10C4

Weight: 0.54 g

Pin Configuration (top view)

1

2

3

4

GND

SHIELD

V

CC

1: N.C.

8

2: Anode

3: Cathode

7

4: N.C.

6

5: GND

6: V

5

7: V

8: V

(enable)

E

(output)

O

CC

Schematic

I

I

F

2

V

F

3

SHIELD

CC

I

I

Unit in mm

V

8

O

V

7

E

V

6

GND

5

CC

O

E

2007-10-01 1

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

TLP2200

Input current, on I

Input current, off I

Supply voltage VCC 4.5 ― 20 V

Enable voltage high VEH 2.0 ― 20 V

Enable voltage low VEL 0 ― 0.8 V

Fan out (TTL load) N ― ― 4 ―

Operating temperature T

1.6 ― 5 mA

F(ON)

0 ― 0.1 mA

F(OFF)

0 ― 85 °C

opr

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

Absolute Maximum Ratings

Characteristic Symbol Rating Unit

Forward current

Peak transient forward current (Note 1)

LED

Reverse voltage

Output current

Supply voltage VCC −0.5~20 V

Output voltage VO −0.5~20 V

Three state enable voltage VE −0.5~20 V

Detector

Total package power dissipation (Note 2) PT 210 mW

Operating temperature range T

Storage temperature range T

Lead solder temperature (10s) (**) T

Isolation voltage (AC 1min., R.H. ≤ 60%,Ta = 25°C)
(Note 3)

(no derating required up to 70°C)

I

10 mA

F

1 A

I

FPT

5 V

V

R

I

25 mA

O

−40~85 °C

opr

−55~125 °C

stg

260 °C

sol

BV

2500 Vrms

S

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

(Note 1) Pulse width 1μs 300pps.

(Note 2) Derate 4.5mW / °C above 70°C ambient temperature.

(Note 3) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5,6,7 and 8 shorted

together

(**) 1.6mm below seating plane.

2007-10-01 2

TLP2200

Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ.* Max. Unit

(V

> VCC)

O

Logic low output voltage VOL I

Logic high output voltage VOH I

Logic low enable current IEL VE = 0.4V ― −0.13 −0.32 mA

Logic high enable current IEH

Logic low enable voltage VEL ― ― ― 0.8 V

Logic high enable voltage VEH ― 2.0 ― ―

Logic low supply current I

Logic high supply current I

High impedance state
output current

Logic low short circuit
output current (Note 4)

Logic high short circuit
output current (Note 4)

Input current hysteresis I

(unless otherwise specified, Ta = 0~85°C,V

I

= 1.6~5mA, I

F(ON)

= 5mA,

I

F

I

OHH

CCL

CCH

I

OZL

I

OZH

I

OSL

I

OSH

HYS

V

= 4.5V

CC

= 6.4mA (4 TTL load) ― 0.32 0.5 V

OL

= −2.6mA 2.4 3.4 ― V

OH

VE = 2.7V ― ― 20

VE = 5.5V ― ― 100

V

= 20V ― 0.01 250

E

I

= 0mA

F

IF = 0mA

VCC = 5V ― 0.05 ― mA

= don't care

V

E

I

= 5mA

F

V

= don't care

E

I

= 5mA

F

V

= 2V

E

I

= 0mA

F

V

= 2V

E

I

= 5mA

F

= GND

V

O

F(OFF)

= 0~0.1mA, V

VO = 5.5V ― ― 100 Output leakage current

= 20V ― 2 500

V

O

VCC = 5.5V ― 5 6.0

= 20V ― 5.6 7.5

V

CC

VCC = 5.5V ― 2.5 4.5

V

= 20V ― 2.8 6.0

CC

V

= 0.4V ― 1 −20

O

VO = 2.4V ― ― 20

VO = 5.5V ― ― 100

= 20V ― 0.01 500

V

O

VO = VCC = 5.5V 25 55 ―

= VCC = 20V 40 80 ―

V

O

VCC = 5.5V −10 −25 ―

= 20V −25 −60 ―

V

CC

EL

= 4.5~20V

CC

= 0~0.8V,V

,

= 2.0~20V)

EH

μA

μA

mA

mA

μA

mA

mA

V

Input forward voltage VF IF = 5mA, Ta = 25°C ― 1.55 1.7 V

Temperature coefficient of
forward voltage

Input reverse breakdown
voltage

Input capacitance CIN VF = 0V, f = 1MHz, Ta = 25°C ―

Resistance (input−output) R

Capacitance (input−output) C

(**) All typ. values are at Ta = 25°C, VCC = 5V, I

/ ΔTa IF = 5mA ― −2.0 ― mV / °C

ΔV

F

IR = 10μA, Ta = 25°C 5 ― ― V

BV

R

― pF

― Ω

V

I−O

V

I−O

45

= 500V R.H. ≤ 60% (Note 3) 5×10

I−O

= 0V, f = 1MHz (Note 3) ― 0.6 ― pF

I−O

= 3mA unless otherwise specified.

F(ON)

10

10

14

2007-10-01 3