TOSHIBA TLP2166A Technical data

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TOSHIBA PHOTOCOUPLER GaAAs Ired & PHOTO-IC
TLP2166A
Plasma Display Panels (PDPs)
TLP2166A
Unit: mm
3.3-V Voltage Source
The Toshiba TLP2166A consists of a GaAAs light emitting diode and a integrated high-gain, high-speed photodetector. The TLP2166A is housed in the 8-pin SO package. Since the TLP2166A contains two photocouplers, it saves board space. the TLP2166A operates with a 3.3-V supply voltage.
z Inverting logic output (totem-pole output)
z SO8 package
z Guaranteed performance over -40 to 100°C
z Power supply voltage: 3.0 to 3.6 V
z Input threshold current: I
z Switching time (t
pHL
/ t
z Switching speed: 15 MBd (typ.)(NRZ)
z Common-mode transient immunity: ±15 kV/μs
z Isolation voltage: 2500 V
Truth Table
Input LED1(2) Tr1(3) Tr2(4) Output 1(2)
H
L
ON OFF ON
OFF ON OFF H
Schematic
IF1
1
VF1
2
= 3 mA (max)
FHL
): 75 ns (max)
pLH
rms
Tr1
Tr2
ICC
IO1
L
8
V
CC
7
V
O1
8 6 5
7
3.95 ± 0.25
3 4
2
1
5.1 ± 0.2
2.5 ± 0.2
1.27 ± 0.15
0.38
0.305 min
0.1 ± 0.1
JEDEC JEITA TOSHIBA 11−5K1
Weight: 0.21 g (typ.)
Pin Configuration (Top View)
1
VCC
2
3
4
SHIELD
GND
1: ANODE 1
8
2: CATHODE 1 3: CATHODE 2
7
4: ANODE 2 5: GND
6
6: V
O2
7: V
O1
5
8: VCC
6.0 ± 0.2
11- 5K1
(Output2) (Output1)
SHIELD
3
VF2
4
I
F2
SHIELD
A bypass capacitor of 0.1μF must be connected between pins 8 and 5.
Tr3
Tr4
I
O2
6
V
O2
5
GND
1
2008-11-27
TLP2166A
Absolute Maximum Ratings (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current (Note 1) IF 15 mA
Forward current derating (Ta 95) (Note 1) ⊿IF/Ta -0 . 5 m A /
LED
Peak Transient Forward Current (Note 1,2) IFP 1 A
Reverse Voltage (Note 1) VR 5 V
Output Current (Note 1) IO 10 mA
Output Voltage (Note 1) VO 6 V
Supply Voltage VCC 6 V
DETECTOR
Output Power Dissipation PO 40 mW
Operating Temperature Range T
Storage Temperature Range T
Lead Soldering Temperature (10 s) T
Isolation Voltage (AC,1 min, R.H.60%,Ta=25°C) (Note 3) BVs 2500 V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Each Channel.
Note 2: Pulse width ≤ 1 μs, 300 pps.
Note 3: This device is regarded as a two terminal device : pins 1, 2, 3 and 4 are shorted together,
as are pins 5, 6, 7 and 8.
-40 to 100 °C
opr
-55 to 125 °C
stg
260 °C
sol
rms
Recommended Operating Conditions
CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT
Input Current , ON (Note 1) I
Input Voltage , OFF (Note 1) V
Supply Voltage* (Note 4) VCC 3.0 3.3 3.6 V
Operating Temperature T
5 10 mA
F(ON)
F(OFF)
-40 ― 100 °C
opr
0 0.8 V
* This item denotes operating range, not meaning of recommended operating conditions.
Note 4: The detector of this product requires a power supply voltage (VCC) of 3.0 V or higher for
stable operation.
If the VCC is lower than this value, an I
may increase, or an output may be unstable.
CCH
Be sure to use the product after checking the supply current, and the operation of a power-on/-off
Note 5: A ceramic capacitor (0.1 μF) should be connected from pin 8 (VCC) to pin 5 (GND) to stabilize the operation
of the high gain linear amplifier. Failure to provide the bypass may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm.
2
2008-11-27
Electrical Characteristics (Unless otherwise specified, Ta=-40 to 100°C, VCC=3.0 to 3.6 V)
TLP2166A
CHARACTERISTIC SYMBOL
Input Forward Voltage (Note 1) VF IF=10 mA , Ta=25°C 1.3 1.65 1.75 V
Temperature Coefficient of
Forward Voltage
Input Reverse Current (Note 1) IR VR=5 V , Ta=25°C 10 μA
Input Capacitance (Note 1) CT V=0 , f=1 MHz , Ta=25°C 45 pF
Logic Low Output Voltage (Note 1) VOL 1
Logic High Output Voltage (Note 1) VOH 2
Logic Low Supply Current I
Logic High Supply Current I
Operating Supply Voltage VCC 3.0
Input Current Logic
Low Output
Input Voltage Logic
High Output
(Note 1) ΔVF/ΔTa
CCL
CCH
(Note 1) I
(Note 1) V
FHL
FLH
TEST
CIRCUIT
I
IOL=1.6 mA , IF=10 mA,
VCC=3.3 V
IOH=-0.02 mA, VF=1.05 V
VCC=3.3 V
3 IF=10 mA 7.0 10.0 mA
4 VF=0 V (Note 4) 4.0 10.0 mA
I
I
CONDITION MIN TYP. MAX UNIT
=10 mA -2.0 mV/°C
F
0.3 0.6 V
2.0 2.6 V
3.6 V
=1.6 mA, VO<0.6 V 3 mA
O
=-0.02 mA, VO>2.0 V 0.8 V
O
*All typical values are at Ta=25°C.
Isolation Characteristics
(Ta = 25℃)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance input to output CS VS = 0,f = 1 MHz (Note 3) 0.8 pF
12
14
Isolation resistance R
Isolation voltage BV
R.H. 60%,VS = 500 V (Note 3) 1×10
S
AC,1 minute 2500
AC,1 second,in oil 5000
S
DC,1 minute,in oil 5000 ― V
10
Ω
V
rms
dc
3
2008-11-27
TLP2166A
A
A
Switching Characteristics (Unless otherwise specified, Ta=-40 to 100℃、VCC=3.0 to 3.6 V)(Each Channel)
I
CCL
-
|
TEST
CIRCUIT
5
6
IO
CONDITION MIN TYP. MAX UNIT
IF=07.5 mA
IF=7.50 mA
IF=7.5 mA,R
=07.5 mA
F
IF=7.50 mA
VCM=1000 V
VO(min)=2 V, Ta=25°C
VCM=1000 V
VO(max)=0.8 V, Ta=25°C
V
V
OL
V
V
CC
IN
p-p
p-p
V
CC
R
=100 Ω
IN
CL=15 pF
(Note 6)
=100,CL=15 pF
(Note 6)
=100 Ω
R
IN
CL=15 pF
(Note 6)
, IF=0 mA,
, IF=7.5 mA,
1
F
2
3
4
1
2
3 6
4
75 ns
75 ns
45 ns
5 ns
5 ns
15000
-15000
V/μs
V/μs
8
V
CC
7
6
0.1 μF
5
GND
SHIELD
Test Circuit
CCH
V
CC
8
I
CCH
7
0.1 μF
5
GND
SHIELD
IO
CHARACTERISTIC SYMBOL
Propagation Delay Time
to Logic Low output
Propagation Delay Time
to Logic High output
Switching Time Dispersion
between ON and OFF
Fall Time (90 – 10 %) tf I
Rise Time (10 – 90 %) tr
Common Mode transient
Immunity at High Level Output
Common Mode transient
Immunity at Low Level Output
t
pHL
t
pLH
|t
pHL
t
pLH
CMH
CML
*All typical values are at Ta=25°C, VCC=3.3 V.
Note 6: CL is approximately 15 pF which includes probe and jig/stray wiring capacitance.
TEST CIRCUIT 1: VOL Test Circuit TEST CIRCUIT 2: VOH Test Circuit
IF
1
2
3
4
SHIELD
V
CC
GND
8
7
6
0.1 μF
5
TEST CIRCUIT 3: I
IF1
1
2
3
IF2
SHIELD
Test Circuit TEST CIRCUIT 4: I
CCL
8
V
CC
7
0.1 μF
6
5 4
GND
V
O
V
V
CC
V
CC
4
2008-11-27
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