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TOSHIBA Photocoupler GaAs Ired & Photo−MOS FET
TLP206G
TLP206G
PBX
Modem･FAX Card
Unit in mm
Measurement Instrument
The TOSHIBA TLP206G consists of gallium arsenide infrared emitting
diode optically coupled to a photo−MOS FET in a 8 pin SOP.
The TLP206G is a 2−Form−A switch which is suitable for replacement of
mechanical relays in many application.
· SOP 8 pin (2.54SOP8): 2−Form−A
· Peak off−state voltage: 350V(min)
· Trigger LED current: 3mA(max)
· On−state current: 120mA(max)
· On−state resistance: 35Ω(max)
· Isolation voltage: 1500V
· UL recognized: UL1577, file no.E67349
· BSI approved: BS EN60065: 1994,certificate no.8273
BS EN60950: 1992,certificate no.8274
· SEMKO approved: SS EN60065
SS EN60950
· Option(V4)type
TUV approved: DIN VDE0884 / 06.92,
certificate No. R9850580
rms
(min)
JEDEC ―
EIAJ ―
TOSHIBA
Weight: 0.2 g
Schematic Pin Configuration
(top vi ew)
1, 3
2, 4
6, 8
5, 7
2-Form-A
87
12
65
34
1
1
2
3
4
1, 3: Anode
2, 4: Cathpde
5: Drain D1
6: Drain D2
7: Drain D3
8: Drain D4
8
7
6
5
2002-09-25
TLP206G
Maximum Ratings
Forward current IF 50 mA
Forward current derating (Ta ≥ 25°C) ∆IF / °C -0.5 mA / °C
Pulse forward current (100µs pulse, 100pps) IFP 1 A
LED
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Off-state output terminal voltage V
On-state current
On-state RMS current
Detector
derating(Ta ≥ 25°C)
Junction temperature Tj 125 °C
Storage temperature range T
Operating temperature range T
Lead soldering temperature (10 s) T
Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note 2) BVS 1500
(Ta = 25°C)
Characteristic Symbol Rating Unit
350 V
OFF
Both channel (Note 1) 100
One channel
Both channel (Note 1) -1.0
One channel
ION
∆I
/ °C
ON
-55~125 °C
stg
-40~85 °C
opr
260 °C
sol
120
-1.2
(Note 1): Two channels operating simultaneously.
(Note 2): Device considered a two-terminal device: Pins1,2,3 and 4 shorted
together and pins 5,6,7 and 8 shorted together.
Recommended Operating Conditions
mA
mA / °C
V
rms
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VDD ― ― 280 V
Forward current IF 5 7.5 25 mA
On-state current ION ― ― 100 mA
Operating temperature T
-20 ― 65 °C
opr
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TLP206G
Individual Electrical Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
LED
Capacitance CT V = 0, f = 1 MHz — 30 — pF
Off-state current I
Capacitance C
Detector
OFF
OFF
(Ta = 25°C)
R
V
OFF
V = 0,f = 1MHZ — 40 — pF
= 5 V — — 10 µA
= 350 V — — 1 µA
Coupled Electrical Characteristics
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
Trigger LED current IFT ION = 120 mA — 1 3 mA
On-state resistance RON ION = 120 mA, IF = 5 mA — 22 35 Ω
(Ta = 25°C)
Isolation Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
(Ta = 25°C)
Capacitance input to output C
Isolation resistance R
Isolation voltage BV
Switching Characteristics
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Turn-on time t
Turn-off time t
(Ta = 25°C)
(Note 3): Switching time test circuit
IF
1, 3
2, 4
6, 8
5, 7
S
S
ON
OFF
VS = 0, f = 1 MHz — 0.8 — pF
VS = 500 V, R.H. ≤ 60% 5×10
AC, 1 minute 1500 — —
AC, 1 second, in oil — 3000 —
S
DC, 1 minute, in oil — 3000 — V
10 1014
RL = 200Ω (Note 3)
V
= 20 V, IF = 5 mA
DD
V
R
DD
L
V
OUT
V
IF
OUT
ON
— 0.3 1
— 0.1 1
10%
90%
t
OFF
— Ω
V
rms
ms
t
dc
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2002-09-25
TLP206G
– Ta
I
20
40
F
140
120
100
(mA)
80
60
ON(RMS)
I
40
20
Allowable MOSFET on-state current
60
80
100
120
0
－20
20
0
Ambient temperature Ta (°C)
100
80
60
(mA)
F
40
I
Allowable forward current
20
0
0
－20
Ambient temperature Ta (°C)
– Ta
I
ON
40 60
80
100
– DR
I
5000
3000
1000
500
300
(mA)
FP
I
100
50
Allowable pulse forward current
30
FP
Pulse width ≤ 100µs
Ta = 2 5° C
100
Ta = 25°C
50
30
10
(mA)
F
5
3
1
0.5
Forward current I
0.3
I
F
–VF
10
3
－
3
10
2
－
3
10
1
－
10
3
100
3
Duty cycle ratio DR
/ ∆Ta – IF
∆V
F
－2.8
－2.4
－2.0
/ ∆Ta ( mV / °C )
F
－1.6
－1.2
Forward voltage temperature
coefficient ∆V
－0.8
－0.4
0.1
0.3 1
0.5
10 50
3 5
30
Forward current IF (mA)
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Forward voltage VF (V)
– VFP
I
1000
500
300
FP
(mA)
FP
100
50
30
10
5
3
Pulse forward current I
0
0.6
Pulse width ≤ 10µs
Repetitive frequency = 100Hz
Ta = 2 5° C
1.0 1.4
1.8
2.2 2.6
3.0
Pulse forward voltage VFP (V)
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2002-09-25
TLP206G
– Ta
I
5
4
3
(Ta = 25°C)
FT
2
/ I
FT
I
Relative trigger LED current
1
FT
ION = 120mA
150
Ta = 25°C
IF = 5mA
100
(mA)
ON
50
0
－50
－100
MOSFET on-state current I
0
－40
－20
20
0
40 60 100 80
Ambient temperature Ta (°C)
－150
－2.5
－1.5
MOSFET on-state voltage VON (V)
I
－0.5
ON
– VON
0.5
1.5 2.5
– Ta
R
40
ION = 120mA
IF = 5mA
(Ω)
ON
30
20
10
MOSFET on-state resistance R
0
－20
－40
Ambient temperature Ta (°C)
ON
1000
500
300
(mA)
ON
100
50
30
10
5
3
MOSFET off-state current I
20
0
40 60 100 80
1
－20
0 20
Ambient temperature Ta (°C)
– Ta
I
OFF
40 60
V
= 350V
OFF
80 100
– Ta
t
1000
VDD = 20V
RL = 200Ω
800
IF = 5ｍA
(ms)
600
ON
400
ON
400
300
(ms)
OFF
200
t
OFF
– Ta
VDD = 20V
RL = 200Ω
IF = 5ｍA
Turn-on time t
200
0
－40 －20
40
60 80
20
0
Ambient temperature Ta (°C)
100
100
Turn-off time t
0
－40
－20
20
0
40
60 80
100
Ambient temperature Ta (°C)
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2002-09-25
TLP206G
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
000707EBC
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-09-25
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